Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.     

Performance of decorrelating receivers in multipath Rician fading channels

This letter focuses on the performance analysis of the decorrelating receiver in multipath Rician faded CDMA channels. M-ary QAM scheme is employed to improve the spectral efficiency. Approximate expressions are first derived for the two performance indexes: the average symbol error rate (SER) and the average bit error rate (BER) when the decorrelating-first receiver perfectly knows the channel information of the user of interest. To achieve desirable closed-form expressions of the SER and the BER, we exploit results in large system analysis and make assumptions of a high signal-to-interference ratio (SIR) and/or a small Rician K-factor. To measure the receiver performance in the practical scenario, we further derive expressions to approximate the average SER and BER of the decorrelating-first scheme with channel uncertainty. Simulation results demonstrate that the analytical results can also be employed to evaluate the performance of the combining-first receiver.     

Waveguide probe structures for a multilayer magnetodielectric: An inverse problem

Direct and inverse problems are considered for diffraction by an open end of a rectangular waveguide (RW) with a flange that adjoins a piecewise inhomogeneous planar layered lossy medium. Also considered are similar diffraction problems for a junction of an RW and a rectangular resonator filled with a multilayer medium and a junction of two RWs, one of which contains a multilayer plate. Such open and shielded waveguide probe structures (WPSs) are used for determination and nondestructive testing of parameters of multilayer samples. The direct problem is formulated on the basis of admittance and impedance algorithms with consideration for losses existing in the medium, flange, and screens. In this case, the approximation of the given aperture field allows obtainment of explicit solutions for open and shielded WPSs in the form of integrals. Solution of the inverse problem that lies in determining thicknesses, permittivities, and permeabilities of the layers from measured values of the magnitude of the reflection coefficient is obtained by minimizing the corresponding least-squares error and by constructing artificial neural networks. In order to increase the accuracy, it is proposed to use a two-port of errors and perform measurements for several positions of the sample with respect to the flange and different impedance conditions behind the sample.     

Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets

Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices.     

Transient response of ARROW VCSELs under external optical feedback

The effect of external optical feedback on the transient response of antiresonant reflecting optical waveguide (ARROW) vertical-cavity surface-emitting lasers (VCSELs) is studied. It can be shown that the proper design of ARROW can suppress the excitation of high-order transverse leaky mode as well as increase the critical feedback strength so that stable high-power single-mode operation of VCSELs can be obtained even under the influence of strong external optical feedback.     

Effect of phonon scattering from neutral and charged impurity centers on the lattice heat conductivity of PbTe:(Tl, Na)

Experimental data on the effect of thallium and sodium impurities on the lattice heat conductivity of PbTe at room temperature are reported. Because the lattice of lead chalcogenides is strongly polarized near charged impurities, the effect of impurities on the lattice heat conductivity depends substantially on their charge state. This property of the material has been used to determine the charge state of the thallium impurity in PbTe. The results obtained argue for a model of quasi-local thallium-impurity states which assumes low electron-correlation energy at an impurity center. Fiz. Tverd. Tela (St. Petersburg) 40, 1206–1208 (July 1998)     

Electron as the eigenstate of curvilinear space with torsion

Ideas previously enunciated by the author about the physical interpretation of curvilinear space with torsion are developed. With the new equations describing the eigenstates of such a space, the static centrosymmetric solution for gravitational and electric fields can be made consistent with the Newton and Coulomb laws. The asymptotic behavior of the axisymmetric solution at infinity is studied. The gyromagnetic ratio obtained is characteristic of the electron. Ural State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, p. 56–60, May, 1998.     

Inelastic processes in collisions of multicharged fast ions with atoms

We use the eikonal approximation to develop a general formula for the cross sections of inelastic collisions of multicharged fast ions (including relativistic ions) with atoms that is applicable within a broad range of collision energies, has the standard nonrelativistic limit, and becomes, in the ultrarelativistic case, the well-known result that follows from the exact solution of the Dirac equation. As an example we study the excitation and ionization of a hydrogenlike atom, the single and double excitation and ionization of a heliumlike atom, and multiple (up to the eighth order) ionization of the neon atom and (up to eighteenth order) ionization of the argon atom. We derive simple analytical expressions for the inelastic cross sections and establish recurrence relations linking the cross sections of ionization of different orders. Finally, we compare our results with the experimental data. Zh. éksp. Teor. Fiz. 114, 1646–1660 (November 1998)