Inelastic processes in collisions of multicharged fast ions with atoms

We use the eikonal approximation to develop a general formula for the cross sections of inelastic collisions of multicharged fast ions (including relativistic ions) with atoms that is applicable within a broad range of collision energies, has the standard nonrelativistic limit, and becomes, in the ultrarelativistic case, the well-known result that follows from the exact solution of the Dirac equation. As an example we study the excitation and ionization of a hydrogenlike atom, the single and double excitation and ionization of a heliumlike atom, and multiple (up to the eighth order) ionization of the neon atom and (up to eighteenth order) ionization of the argon atom. We derive simple analytical expressions for the inelastic cross sections and establish recurrence relations linking the cross sections of ionization of different orders. Finally, we compare our results with the experimental data. Zh. éksp. Teor. Fiz. 114, 1646–1660 (November 1998)     

氢化丁苯共聚物结构的核磁共振波谱表征Ⅱ.微观结构的定量计算

在氢化丁苯共聚物¹³C-NMR谱脂肪碳部分谱带归属的基础上,根据各谱带的主要来源,推导出六个二单元浓度的计算公式。计算出二单元、一单元的相对含量,各结构单元的数均序列长度、嵌段含量和其它结构参数。加氢前后的¹H-和¹³C-NMR谱的组成计算结果基本一致。初步探讨了作为粘度指数改进剂的氢化丁苯共聚物微观结构与性能的关系,为合成提供了依据。     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

A hybrid spreading/despreading function with good SNR performancefor band-limited DS-CDMA

Code-division multiple-access (CDMA) implemented with direct-sequence spread spectrum (DS/SS) signaling is a promising multiplexing technique for cellular telecommunications services. The efficiency of a direct-sequence spread-spectrum code-division multiple-access (DS-CDMA) system depends heavily on the shape of the spectrum of the spread signal. Maximum efficiency is obtained with an ideal brick-wall bandpass spectrum. There are two approaches toward achieving such a spectrum. One is to use a simple spreader that produces a broad spectrum and then follow it with a precise, high order filter to band limit the spectrum. A second approach, which is the approach taken in this paper, is to use a spreader that produces a spectrum close to the ideal spectrum and then employ a simple filter to control the out-of-band power. The proposed spreader/despreader is based on a simple hybrid function and can be easily implemented. An analysis provides a compact expression for the signal-to-noise ratio (SNR) of a RAKE receiver. The expression includes the effects of baseband, intermediate frequency (IF) and RF filtering as well as the effects of the spectral densities of the spreading/despreading functions. The analysis shows that the proposed spreader/despreader yields superior performance over a conventional pseudo noise (PN) spreading/despreading mechanism     

ICP－AES法测定金属矿产品中的磷

本文研究了铁矿石、铬矿石、锰矿石中的微量磷的电感耦合等离子体发射光谱法的测定。方法简便，具有很好的精密度和准确度。标准样品的分析结果基本与标称值相吻合，回收率在９５％－１０５％之间。     

The signature theorem and some related questions

Some corollaries of the Hirzebruch-Thom signature theorem are discussed. The multiplicativity of the signature and the naturalness of the Pontryagin classes for coverings in the case of ℚ-homology manifolds is proved. A geometric proof of Hirzebruch’s well-known “functional equation” for the virtual signature is outlined. Bibliography: 25 titles. Translated fromZapiski Nauchnykh Seminarov POMI, Vol. 231, 1995, pp. 197–209. Translated by N. Yu. Netsvetaev.     

Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface. Fiz. Tekh. Poluprovodn. 31, 1246–1248 (October 1997)     

Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution

Galvanomagnetic phenomena and photoconductivity in broken-gap type-II GaInAsSb/p-InAs heterojunctions with different levels of doping of the solid solution with donor (Te) or acceptor (Zn) impurities have been investigated. It has been determined that in such structures an electronic channel, which determines the galvanomagnetic effects in a wide range of doping levels, is present at the heterojunction. A sharp decrease of the Hall mobility was observed in the experimental heterostructures with a high level of doping of the epitaxial layer with an acceptor impurity. The observed effect is due to exhaustion of the electronic channel as a result of carrier localization in potential wells at the heterojunction. Fiz. Tekh. Poluprovodn. 31, 897–901 (August 1997)     

Investigation of the chemical state of copper in Cu/SiO2 composite films by x-ray photoelectron spectroscopy

The concentration and chemical state of copper in the subsurface region of Cu/SiO₂ composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO₂) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO₂ matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material.     

一类非线性抛物型变分不等方程的全局吸引子及弱近似惯性流形

对由一类非线性抛物型变分不等方程所描述的无穷维动力系统，给出了存在全局吸引子及弱近似惯性流形的充分条件．