不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

正交数字上变频器AD9857的使用

介绍数字正交上变频器AD9857的原理、功能和基本使用方法以及如何通过单片机8051实现对它的编程控制。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.     

协同工作式非线性编辑网络的解决方案

通过对一种非线性编辑网络解决方案的探讨,分别从软件、硬件、网络、工作方式等方面阐述了协同工作式非线性编辑技术.     

超声波清洗在贵/廉金属复合材料生产过程的应用研究

本文结合“ODS清洗剂消费淘汰项目”的实施，并对新型超声波清洗机及新型ODS清洗液进行了工艺试验，阐述了超声波清洗技术是贵／廉金属复合材料生产过程中无可替代的清洗技术。     

Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region

Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region (1–10 μm²) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (10¹⁸ cm⁻³) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10⁻⁷ Ω cm² at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K). __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146. Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov.     

16信道0.35μmCMOS/VCSEL光发射模块

研究了垂直腔面发射激光器 (VCSEL)及其列阵器件的光谱特性、调制特性、高频特性及与微电子电路的兼容性 ,将 1× 16的VCSEL与CMOS专用集成电路进行多芯片组装 (MCM ) ,混合集成为 16信道VCSEL光发射功能模块 .测试过程中 ,功能模块的光电特性及其均匀性良好 ,测量的 - 3dB频带宽度大于 2GHz.     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm