Intramolecular energy transferable (2,2‐diphenylvinyl)phenyl substituted poly(p‐phenylenevinylene) derivative with efficient photoluminescence and electroluminescence

A poly(p‐phenylenevinylene) (PPV) derivative containing a bulky (2,2‐diphenylvinyl)phenyl group in the side chain, EHDVP‐PPV, was synthesized by Gilch route. The reduced tolane‐bisbenzyl (TBB) defects, as well as the structure of the polymer, was confirmed by various spectroscopic methods. The intramolecular energy transfer from the (2,2‐diphenylvinyl)phenyl side group to the PPV backbone was studied by UV‐vis and photoluminescence (PL) of the obtained polymer and model compound. The polymer film showed maximum absorption and emission peaks at 454 and 546 nm, respectively, and high PL efficiency of 57%. A yellow electroluminescence (λ_max = 548 nm) was obtained with intensities of 6479 cd/m² when the light‐emitting diodes of ITO/PEDOT/EHDVP‐PPV/LiF/Al were fabricated. The maximum power efficiency of the devices was 0.729 lm/W with a turn‐on voltage of 3.6 V. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 5636–5646, 2004     

Reversible energy recovery logic circuit without non-adiabaticenergy loss

The authors propose a reversible energy recovery logic (RERL) circuit for ultra-low-energy consumption, which consumes only adiabatic energy loss and leakage current loss by completely eliminating non-adiabatic energy loss. It is a dual-rail adiabatic circuit using the concept of reversible logic with a new eight-phase clocking scheme. Simulation results show that at low-speed operation, the RERL consumes much less energy than the complementary static CMOS circuit and other adiabatic logic circuits     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

Improved performances of a S-SEED using extremely shallowquantum-wells and asymmetric Fabry-Perot cavity structure

The authors report significantly improved performances of a symmetric self-electrooptic-effect device (S-SEED), with high on-off contrast ratio (>30:l) and large optical bistability loop widths (ΔP=44%) at an applied bias of V_a=0 V, i.e., with no power supply. The S-SEED is made of extremely shallow quantum wells (ESQWs) in an asymmetric Fabry-Perot (AFP) cavity structure. At V_a =5 V ΔP increased by up to 95%, preserving the high contrast ratio. The reflectivity changes at V_a=0 and 5 V were about 15% and 30%, respectively. These are believed to be the largest values ever reported for such structures     

Strong Diffie-Hellman-DSA Key Exchange

To provide authentication to the Diffie-Hellman key exchange, a few integrated key exchange schemes which provide authentication using the DSA signature have been proposed in the literature. In this letter we point out that all of the previous Diffie-Hellman-DSA schemes do not provide security against session state reveal attacks. We also suggest a strong Diffie-Hellman-DSA scheme providing security against session state reveal attacks as well as forward secrecy and key independence     

Cellulose dimethylphenylcarbamate-bonded carbon-clad zirconia for chiral separation in high performance liquid chromatography.

Porous zirconia particles are very robust material and have received considerable attention as a stationary phase support for HPLC. We prepared cellulose dimethylphenylcarbamate-bonded carbon-clad zirconia (CDMPCCZ) as a chiral stationary phase (CSP) for separation of enantiomers of a set of 14 racemic compounds in normal phase (NP) and reversed-phase (RP) liquid chromatography. Retention and enantioselectivity on CDMPCCZ were compared to those on CDMPC-coated zirconia (CDMPCZ) to see how the change in immobilization method of the chiral selector affects the retention and chiral selectivity. In NPLC, retention was longer and the number of resolved racemates was smaller on CDMPCCZ than on CDMPCZ. However, chiral selectivity factors for some resolved racemates were better on CDMPCCZ than on CDMPCZ. The longer retention on CDMPCCZ is likely due to strong, non-chiral discriminating interactions with the carbon layer on CDMPCZ. In RPLC only two racemates were resolved on CDMPCCZ, but retention times were shorter than, and resolutions were comparable to, those in NPLC, indicating a potential for improving chromatographic performance of the CDMPCCZ column in RPLC with optimized column preparation and separation conditions.     

Floating-patch MEMS antennas on HRS substrate for millimetre-wave applications

Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.     

Still image coding based on vector quantization and fractalapproximation

In this paper, we propose a coding algorithm for still images using vector quantization (VQ) and fractal approximation, in which low-frequency components of an input image are approximated by VQ, and its residual is coded by fractal mapping. The conventional fractal coding algorithms indirectly used the gray patterns of an original image with contraction mapping, whereas the proposed fractal coding method employs an approximated and then decimated image as a domain pool and uses its gray patterns. Thus, the proposed algorithm utilizes fractal approximation without the constraint of contraction mapping. For approximation of an original image, we employ the discrete cosine transform (DCT) rather than conventional polynomial-based transforms. In addition, for variable blocksize segmentation, we use the fractal dimension of a block that represents the roughness of the gray surface of a region. Computer simulations with several test images show that the proposed method shows better performance than the conventional fractal coding methods for encoding still pictures.     

A 44-GHz monolithic waveguide plane-wave amplifier with improvedunit cell design [using pHEMTs]

A 44-GHz monolithic waveguide plane-wave amplifier (PWA) with improved unit cell design is presented in this paper. The unit cell is a two-stage direct-coupled design and satisfies size, bistability, and stability requirements of the waveguide PWA. The ultra-compact unit cell had a cell size of 0.8 mm², and showed a small-signal gain of 8 dB and an output power of 15 dBm at 44 GHz with a corresponding dc-to-RF efficiency of 10%. A monolithic waveguide PWA using these unit cells showed a “flange-to-flange” gain of 5 dB, an output power of 0.3 W, and an efficiency of 2% at 44 GHz     

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

A new physics-based noise model of a GaAs PHEMT is developed using the characteristic potential method (CPM). The model calculates the intrinsic noise current sources using CPM. Combined with the extrinsic noise parameters extracted from the measured S-parameters, the model reproduces four noise parameters of the device accurately under low drain bias voltages without using any fitting parameters. The model is verified with a 0.2-/spl mu/m GaAs PHEMT and shows excellent agreement with the measurements for all the noise parameters up to a drain voltage of 1 V Also, the proposed method allows the simulation of the microscopic noise distribution and thus allows one to obtain a physical understanding of noise mechanisms inside the device.