Passive alignment method of polymer PLC devices by using a hot embossing technique

A novel fabrication process using a hot embossing technique has been developed for micromechanical passive alignment of polymer planar lightwave circuit (PLC) devices. With only one step of embossing, single-mode waveguide straight channels and micropedestals for passive aligning are simultaneously defined on a polymer thin film with an accuracy of /spl plusmn/0.5 /spl mu/m. This process reduces the steps for fabricating alignment structures. A fabricated polymer PLC chip and fibers are combined on a v-grooved silicon optical bench (SiOB) in a flip-chip manner. The process provides a coupling loss as low as 0.67 dB per coupling face and a cost-effective packaging solution for various polymer PLC devices.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Combining ideal beamforming and Alamouti space-time block codes

The simplest Alamouti space-time block code is coupled with a larger number of transmit antennas via ideal beamforming to achieve higher diversity gain. It is shown that the combined system can remain both full diversity and full code rate without orthogonality loss. Simulation results show a significant performance gain over the conventional space-time block codes.     

On Finding the Multicast Protection Tree Considering SRLG in WDM Optical Networks

In this letter, a new sharing mechanism, SRLG sharing, is proposed, which allows the links of the same shared risk link group (SRLG) in a primary light tree to share protections in WDM optical networks. In previous studies, how to share spare resources with SRLG constraints has not been studied in multicast optical networks. In this letter, considering SRLG sharing, we propose a novel algorithm –multicast with SRLG sharing (MSS)– to establish a protection light tree. Finally, the algorithm MSS and the algorithm multicast with no SRLG sharing (MNSS) are compared through a simulation to show that our new sharing scheme of SRLG sharing is more efficient than that of no SRLG sharing in terms of spare resource utilization and blocking probability.     

Structured low-density parity-check codes

This article describes the different methods to design regular low density parity-check (LDPC) codes with large girth. In graph terms, this corresponds to designing bipartite undirected regular graphs with large girth. Large girth speeds the convergence of iterative decoding and improves the performance at least in the high SNR range, by slowing down the onsetting of the error floor. We reviewed several existing constructions from exhaustive search to highly structured designs based on Euclidean and projective finite geometries and combinatorial designs. We describe GB and TS LDPC codes and compared the BER performance with large girth to the BER performance of random codes. These studies confirm that in the high SNR regime these codes with high girth exhibit better BER performance. The regularity of the codes provides additional advantages that we did not explore in this article like the simplicity of their hardware implementation and fast encoding.     

子空间方法盲多用户检测技术分析与探索

着重分析了基于子空间跟踪的盲线性多用户检测算法 ,并对其内部算法模块进行了仿真比较 ,最后对算法性能改善方法提出了自己的新思路     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

MEMS封装技术研究进展

介绍了MEMS封装技术的特点、材料以及新技术,包括单片全集成MEMS封装、多芯片组件(MCM)封装、倒装芯片封装、准密封封装和模块式MEMS封装等。文中还介绍了MEMS产品封装实例。     

Boole函数的线性可分性(Ⅰ)——n-维超立方体的基本理论

Boole函数的线性可分性是前向人工神经网络理论中的一个比较困难的问题之一。目前仅对变量数n≤7的某些问题给予讨论。当n≥8时,尚无判别Boole函数线性可分的一般准则,更无线性可分Boole函数的计数公式。基于此,本文详细地研究了与Boole函数线性可分性有关的n-维超立方体的基本理论,包括n-维超立方体的基本性质、超立方体中的平行线、子超立方体的计数等,并给出了构造n-维超立方体图的一种新方法。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.