A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.     

农村通信如何"突围"

农村通信作为农村地区信息化的基础，对于全面建设小康具有特殊的重要地位。介绍了我国农村通信的发展现状，分析了农村通信发展的困难压其原因，最后对农村压边远、欠发达地区通信的均衡震展提出了一些建议。     

GaN-MOCVD设备反应室流场的CFD数值仿真

采用计算流体力学方法对生长半导体材料GaN的重要设备MOCVD(金属有机物化学气相沉积)反应室中的流场结构进行了三维数值仿真.数值模拟采用基于非交错网格系统的SIMPLE算法,用有限体积方法对控制方程进行离散,并采用改进的压力-速度耦合方法进行求解.数值仿真给出了具有复杂几何结构和运动方式的GaN-MOCVD反应室中的流场结构,研究了改变几何尺寸和运行参数对MOCVD反应室流场结构的影响,对正在试制开发中的MOCVD设备的几何结构的改进和运行参数的优化提出了指导性建议.     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

无线网络融合的安全技术研究

融合多种网络可满足用户长日寸间连接和尽可能获得较高数据传输速率的需要，但融合后的网络也将各种网络的安全缺陷带进融合网络中。这不但给融合网络的运行带进各种原有的安全问题，而且增加了一些新的安全问题。对此，文章提出了基于恢复的多重防护解决方案，并使用公钥加密算法鉴权。使用私钥对通信数据进行加密。该方案可以为系统提供可靠的安全性，并实现用户对服务的不可抵赖性。该方案还处于研究起步阶段，下一步还需要明确各层的正确行为，以及出现多个恶意节点对某个合法节点诬陷时所应采取的行动。     

三网互联的几个关键技术

对三网互联的几个关键技术进行分析与研究，介绍利用IP技术解决有线电视网地址选择问题，探讨怎样将ATM技术与IP技术相互融合，使真正的信息高速公路成为现实，阐述利用H．323标准全面解决视频网络方案。     

Throughput analysis for multicast switches with multiple input queues

This letter analyzes the saturated throughput for multicast switches with multiple input queues per input port. Under the assumptions of a Poisson uniform traffic model and random packet scheduling policy, we derive the multicast switch saturated throughput under different fanouts. To verify the analysis, extensive simulations are conducted with different switch sizes and fanouts. It is shown that the theoretical analysis and the simulation results have a discrepancy less than 1.9%. Results from this letter can be used as a guidance to design the optimal queuing for multicast switches.     

基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。     

可拓知识空间和可拓知识网格模型(Ⅱ):可拓知识网格

第1部分中已介绍了可拓知识空间定义和相关操作，以及可拓知识空间关联函数计算方法。这一部分进一步建立可拓知识空间语义网、可拓知识网格和可拓知识网格服务，并给出实例和相关的分析讨论。