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11.
制作压力传感器时,在二氧化硅层上淀积多晶硅膜,既可利用优良的机械特性,又可保证压敏电阻与衬底间具有良好的绝缘性,由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明,这类传感器具有灵敏度好,精度高等特点,电路工作范围为0-250℃,且具有良好的温度稳定性。 相似文献
12.
Various wireless systems and the research preceding their practical use in China are described. The topics discussed include research establishments, research and development projects underway, challenges inherent to digital radio, and expansion opportunities afforded by satellite communications 相似文献
13.
目前,世界上最大的计算机网络Internet网,已成为通达150多个国家的国际互联网络。作为引导中国计算机用户进入Internet的中国公用计算机互联网CHINANET也正迅速发展。本文就Internet网的服务方式和入网方式进行了综述。 相似文献
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Fiber-optic reflex sensor for in-line production measurement 总被引:1,自引:0,他引:1
The paper describes experiments concerning distance measurement with fiber-optic sensor and improvement of the measurement principle. The sensor probe was well-designed with a small structure and multi-function. The novel optical fiber probe arrangement as well as the possibilities of use for complex measurement problems are explained using the measurement of an internal screw thread as an example. The experimental results show that the measurement uncertainty of the thread minor diameter can reach ±10 μm, and the stability of the measurement system is better than 0.07%. 相似文献
18.
We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation. 相似文献
19.
In the ever fusion experiments in SWIP, pellet forming process was carried out through adjusting relative devices by staff member in site, which will make every pellet-forming process slight distinction and will result in pellet difference in shape, size and intensity. In the intervals of HL-2A discharges, staff member have to go site to accomplish the pellet-forming process, this wastes human power and increase the potential danger. So it is necessary to develop a remote control system to perform the pellet-forming process. The control system needs have the features of real-time, reliability and be easy to operate and maintain. 相似文献
20.
Sosnowchik B.D. Azevedo R.G. Cao A. Lin L. Pisano A.P. 《Advanced Packaging, IEEE Transactions on》2005,28(4):626-634
This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests. 相似文献