基于PCI总线的扫描电镜图像采集系统

图像采集系统是扫描电镜的一个重要组成部分，用于控制扫描电镜的扫描电源，视频图像采集，数字化与显示，电镜主控计算机与底层微机板的通讯和电镜照相，本图像采集系统基于PCI总线接口设计，硬件主要设计采用FPGA技术，实现了数字电路的模块化设计，集成度和灵活性高，目前，电镜图像卡已达到所要求的设计水平。     

A Donor–Acceptor Polymer with a Peculiar Negative‐Charge‐“Trapping” Characteristic

Voltammetric and spectrophotometric measurements of poly(3,3″‐dipentoxy‐3′‐dicyanoethenyl‐2,2′:5′,2″‐terthiophene) (polyCN) films, in connection with other experimental evidence, reveal a normal oxidative, but a peculiar reductive behavior consisting of trapping of the negative charge during the cathodic scan. Another interesting property of polyCN films is the tendency to form strong intramolecular and intermolecular associations, probably charge‐transfer (CT) complexes. These properties could account for the fact that the photovoltaic performance does not improve when polyCN is blended with a polythiophene donor.     

线性调频雷达最小作用距离范围内目标距离的测量

介绍了一种新的探测雷达最小作用距离的方法,打破了传统的最小跟踪距离受发射脉宽局限的限制,重点介绍对发射线性调频信号的雷达的近距离探测方法,并给出了仿真计算结果。     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

多标准视频硬件解码器的存储器地址映射方法

提出了一种支持多标准视频的存储器地址映射方法,用一个简洁的公式把视频图像映射到DDR SDRAM的存储空间.该方法兼顾运动补偿模块、去块效应滤波模块(或重建模块)和显示模块的不同需求特点,通过充分减少DDR SDRAM非读写命令的额外延时,达到较高的存储器接口效率.     

TD-SCDMA系统终端中的GMM功能实体研究

移动性管理(MM,MobilityManagement)是层3的一个子层,它主要完成与用户的移动性相关的一些功能。根据业务的分域划分,MM子层被分为支持CS模式的MM实体和支持PS模式的GMM实体。本文通过对GMM一般过程和特殊过程的描述,介绍了TD-SCDMA系统终端GMM实体的功能及其实现过程。     

Synthesis of ZSM‐5 Films and Monoliths with Bimodal Micro/Mesoscopic Structures

A route to synthesize ZSM‐5 crystals with a bimodal micro/mesoscopic pore system has been developed in this study; the successful incorporation of the mesopores within the ZSM‐5 structure was performed using tetrapropylammonium hydroxide (TPAOH)‐impregnated mesoporous materials containing carbon nanotubes in the pores, which were encapsulated in the ZSM‐5 crystals during a solid rearrangement process within the framework. Such mesoporous ZSM‐5 zeolites can be readily obtained as powders, thin films, or monoliths.     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

微桥法镍膜的弹性模量和残余应力测量

利用MEMS技术制作了不同尺寸的镍(Ni)膜微桥结构样品。采用纳米压痕仪XP系统测量了微桥载荷与位移的关系,并结合微桥力学理论模型得到了两种不同尺寸的Ni膜的弹性模量和残余应力。结果表明,两种不同尺寸的Ni膜的弹性模量结果一致,为190 GPa左右,但是残余应力变化较大。与采用纳米压痕仪直接测得的带有硅(Si)基底的Ni膜弹性模量186.8 7.5 GPa相比较,两者符合较好。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.