Nonparametric inference in multiplicative intensity model by discrete time observation

This paper deals with nonparametric inference problems in the multiplicative intensity model for counting processes. We propose a Nelson–Aalen type estimator based on discrete observation. The functional asymptotic normality of the estimator is proved. The limit process is the same as that in the continuous observation case, thus the proposed estimator based on discrete observation has the same properties as the Nelson–Aalen estimator based on continuous observation. For example, the asymptotic efficiency of proposed estimator is valid based on less information than the continuous observation case. A Kaplan–Meier type estimator is also discussed. Nonparametric goodness of fit test is considered, and an asymptotically distribution free test is proposed.     

LMS calibration of sampling timing for time-interleaved A/D converters

Novel sampling-timing calibration for time-interleaved A/D converters is proposed and verified by simulation. An FIR-filter structure exploiting the sampling theorem provides a simple but accurate time derivative of the converted signal and hence enables reliable estimation and compensation of sampling-time deviation of each unit ADC assisted by a reference converter and an LMS algorithm.     

Properties of Ge-doped,high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

We investigated the properties of Ge-doped, high-quality bulk GaN crystals with Ge concentrations up to 2.4×10¹⁹ cm⁻³. The Ge-doped crystals were fabricated by hydride vapor phase epitaxy with GeCl₄ as the dopant source. Cathodoluminescence imaging revealed no increase in the dislocation density at even the highest Ge concentration, with values as low as 3.4×10⁶ cm⁻². The carrier concentration, as determined by Hall measurement, was almost identical to the combined concentration of Ge and unintentionally incorporated Si. The electron mobilities were 260 and 146 cm² V⁻¹ s⁻¹ for n=3.3×10¹⁸ and 3.35×10¹⁹ cm⁻³, respectively; these values are markedly larger than those reported in the past for Ge-doped GaN thin films. The optical absorption coefficient was quite small below the band gap energy; it slightly increased with increase in Ge concentration. Thermal conductivity, estimated by the laser-flash method, was virtually independent of Ge concentration, maintaining an excellent value around 2.0 W cm⁻¹ K⁻¹. Thermal expansion coefficients along the a- and m-axes were approximately constant at 5.0×10⁻⁶ K⁻¹ in the measured doping concentration range.     

Buckling and crumpling of drying droplets of colloid-polymer suspensions

Spray drying of complex liquids to form solid powders is important in many industrial applications. One of the challenges associated with spray drying is controlling the morphologies of the powders produced; this requires an understanding of how drying mechanics depend on the ingredients and conditions. We demonstrate that the morphology of powders produced by spray drying colloidal polystyrene (PS) suspensions can be significantly altered by changing the molecular weight of dissolved poly(ethylene oxide) (PEO). Samples containing high-molecular-weight PEO produce powders with more crumpled morphologies than those containing low-molecular-weight PEO. Observations of drying droplets suspended by a thin film of vapor suggest that this occurs because the samples with high-molecular-weight PEO buckle earlier in the drying process when the droplets are larger. Earlier buckling times are likely caused by the decreased stability, demonstrated by bulk rheology experiments, of PS particles in the presence of high-molecular-weight PEO at elevated temperatures. We present a consistent picture in which decreased particle stability hastens droplet buckling and leads to more crumpled powder morphologies; this underscores the importance of interparticle forces in determining the buckling of particle-laden droplets.     

Electronic inhomogeneity and breakdown of the universal thermal conductivity of cuprate superconductors

We report systematic, high-precision measurements of the low-T (down to 70 mK) thermal conductivity kappa of YBa2Cu3O(y), La(2-x)Sr(x)CuO4, and Bi2Sr2CaCu2O(8+delta). Careful examinations of the Zn- and hole-doping dependences of the residual thermal conductivity kappa0/T, as well as the in-plane anisotropy of kappa0/T in Bi2Sr2CaCu2O(8+delta), indicate a breakdown of the universal thermal conductivity, a notable theoretical prediction for d-wave superconductors. Our results point to an important role of electronic inhomogeneities, which are not considered in the standard perturbation theory for thermal conductivity, in the underdoped to optimally doped regime.     

Low-birefringent, chiral banana phase below calamitic nematic and/or smectic C phases in oxadiazole derivatives

Bent-shaped molecules based on the oxadiazole central core with various side wings and terminal chain groups have been synthesized, and their liquid-crystalline behavior was investigated by optical microscopic, X-ray, and electrooptic measurements. These molecules exhibit liquid-crystal polymorphism including both the calamitic and banana phases. Such a characteristic polymorphism is attributable to the larger bend angle of the oxadiazole core compared to that of the resorcinol core used in conventional banana molecules. Only one type of banana phase, designated as the Bx phase, is formed. It appears upon cooling from the nematic and smectic liquid crystals and exhibits chiral domains with a very weak birefringence (apparently optically isotropic). By applying an electric field, the Bx phase is altered to a high-birefringence B2 phase with a homochiral SmC(A)P(A) structure that exhibits an antiferroelectric response. From detailed analyses of the optical texture and X-ray patterns through the transformation from well-oriented calamitic phases, the Bx phase was found to exhibit a helical structure, which arises as a frustration from the ground-state B2 phase in such a manner that the blocks of B2 layers are twisted with respect to each other in a direction parallel to the layer plane similarly to the twisted grain boundary (TGB) phase.     

Oxidation of gem-borylsilylalkylcoppers to acylsilanes with air

[reaction: see text] 1-Boryl-1-silylalkylcoppers react with molecular oxygen in the presence of pyridine to afford acylsilanes efficiently. The one-pot process consists of two reactions: alkylation of 1-boryl-1-chloro-silylmethyllithium with Grignard reagents in the presence of copper(I) cyanide and aerobic oxidation of the alkylcopper species. This procedure enables us to access the divergent synthesis of acylsilanes.     

Supramolecular triplet photosensitizer. Effects of the cation binding mode on E-Z isomerization of 1,2-dichloroethylene

[reaction: see text] Effects of metal cation recognition on photosensitized E-Z isomerization of 1,2-dichloroethylene have been investigated with two types of m,p- and o,o'-podand (oligo-oxyethylene unit) benzophenones 2 and 3. With increasing cation size, the %Z ratio at the photostationary state was changed from 67 to 91% for 2 but remained almost unchanged (86-88%) for 3. These results were interpreted in terms of the variation of excited triplet energy, E(T), associated with the cation complexation of these photosensitizers 2 and 3.     

A solid-phase self-organized catalyst of nanopalladium with main-chain viologen polymers: alpha-alkylation of ketones with primary alcohols

[reaction: see text] A novel solid-phase self-organized catalyst of palladium nanoparticles was prepared from PdCl(2) with main-chain viologen polymers via complexation and reduction. This insoluble nanocatalyst nano-Pd-V efficiently promoted alpha-alkylation of ketones with primary alcohols in the presence of Ba(OH)(2).H(2)O under atmospheric conditions without organic solvents. The nano-Pd-V catalyst was reused without loss of catalytic activity.     

Circuit and Latch Capable of Masking Soft Errors with Schmitt Trigger

In VLSIs, soft errors resulting from radiation-induced transient pulses frequently occur. In recent high-density and low-power VLSIs, the operation of systems is seriously affected by not only soft errors occurring on memory systems and the latches of logic circuits but also those occurring on the combinational parts of logic circuits. The existing tolerant methods for soft errors on the combinational parts do not provide enough high tolerant capability with small performance penalty. This paper proposes a class of soft error masking circuits by using a Schmitt trigger circuit and a pass transistor. The paper also presents a construction of soft error masking latches (SEM-latches) capable of masking transient pulses occurring on combinational circuits. Moreover, simulation results show that the proposed method has higher soft error tolerant capability than the existing methods. For supply voltage V _DD ?=?3.3 V, the proposed method is capable of masking transient pulses of magnitude 4.0 V or less.