Luminescence centers in porous silicon

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100–150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of andX band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.     

Optical spectra of an intracavity two-photon medium with sequeezed inputs

We consider an ensemble of three-level configuration atoms in an optical cavity, interacting through two-photon transitions with a cavity mode, driven by a broad-band squeezed input of finite amplitude. The atom-cavity system is coupled to reservoirs to describe the losses of the atoms and the cavity. Optical spectra in the transmitted and the reflected field are calculated and analysed in the good cavity limit, for the purely absorptive resonant case and the general case, respectively.