氟碳铈矿／直氟碳钙铈矿混层结构中新规则混层矿物的超微结构研究

用电子衍射和晶格像技术研究了钙稀土氟碳酸盐矿物中的氟碳铈矿（Ｂ）／直氟碳钙铈矿（Ｓ）混层结构，发现并确定了Ｂ＿４Ｓ＿４、Ｂ＿８Ｓ＿６、Ｂ＿１Ｓ＿６、Ｂ＿７Ｓ＿４和Ｂ＿２Ｓ＿１５种新规则混层矿物的对称性、晶胞参数及理论晶体化学式。根据所获得的高分辨晶格像真实而直观地揭示出该类Ｂ＿ｍＳ＿ｎ（ｍ＞ｎ）型新规则混层矿物的长周期有序堆垛结构特征及变化规律。     

微光CCD摄像器件综合特性的分析与比较

ＣＣＤ的优良特性使其在微光电视技术领域得到了广泛运用。本文对各种微光ＣＣＤ摄像器件的综合特性例如信噪比、探测率、动态范围与计数模式等进行了详细的研究与对比，并得出基本结论。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

荧光波长对共焦显微镜成像特性的影响

导出了共焦显微镜中不同荧光波长情况下的荧光功率传输函数、三维脉冲响应函数（3D－PSF）和三维光学传递函数（3D－OTF）。结果表明，不同的荧光波长对共焦显微镜的空间截止频率、分辨率、光学传递函数存在明显的影响。当激发波长与荧光波长的比值下降到一定程度时，可以看到明显的失锥现象。     

Design of a 3780-point IFFT processor for TDS-OFDM

This correspondence presents a design of 3780-point IFFT processor for TDS-OFDM terrestrial DTV transmitter using FPGA. It demonstrates the algorithm design and error analysis of the processor, which can achieve a throughput of 7.56M complex IFFT operations per second. This design meets the signal-to-quantization noise ratio requirement of the TDS-OFDM system. It consists of two FPGA and one dual-port RAM. The data stream pipeline algorithm is implemented     

几种N-取代马来酰胺酸辅酶模型的核磁共振研究

我们对8种N-取代马来酰胺酸辅酶模型与不同类型的亲核试剂反应后生成的产物进行了¹H、¹³C NMR的研究, 测得¹H、¹³C谱化学位移,研 究探讨其规律性, 并测试了IR谱和元素分析.     

Influence of lattice self-heating and hot-carrier transport ondevice performance

As device technologies improve, the traditional drift-diffusion transport model becomes inadequate to predict the performance of state-of-the-art semiconductor devices. The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena. For more accurate prediction on device performance, a new device simulator capable of full thermodynamic simulation was developed. The carrier and carrier energy transport equations are directly derived from the Boltzmann transport equation, and the energy transfer among electrons, holes and crystal lattice takes into account most of the possible mechanisms. This simulator was used to simulate the DC behavior of a BJT and a half-micron NMOS. The simulation results show that for advanced devices, not only the drift-diffusion model becomes inadequate, but including only one of the two thermal effects results in error in simulated device characteristics     

Scalarization of dyadic spectral Green's functions and networkformalism for three-dimensional full-wave analysis of planar lines andantennas

A novel and systematic method is presented for the complete determination of dyadic spectral Green's functions directly from Maxwell's equations. With the use of generalized scalarizations developed in this paper, four general and concise expressions for the spectral Green's functions for one-dimensionally inhomogeneous multilayer structures, excited by three-dimensional electric and magnetic current sources, are given in terms of modal amplitudes together with appropriate explicit singular terms at the source region. It is shown that Maxwell's equations in spectral-domain can be reduced, by using dyadic spectral eigenfunctions, to two sets of z-dependent inhomogeneous transmission-line equations for the modal amplitudes. One set of the transmission-line equations are due to the transverse current sources and the other set due to the vertical current sources. Utilizing these equations, network schematizations of the excitation, transmission and reflection processes of three-dimensional electromagnetic waves in one-dimensionally inhomogeneous multilayer structures are achieved in a full-wave manner. The determination of the spectral Green's functions becomes so simple that it is accomplished by the investigation of voltages and currents on the derived equivalent circuits. Examples of singleand multilayer structures are used to validate the general expressions and the equivalent circuits     

数字混沌扩频序列的盲估计

混沌序列具有非线性、宽带类噪声、大的码族、任意长的周期且容易产生的特性,因此在扩频通信系统中很有实用价值。本文将文献[1]中对伪随机扩频序列盲估计的方法推广应用到混沌扩频通信中,并对其不足提出了改进方法。在只知道扩频码周期而无其它任何先验知识的条件下,利用特征值分析的方法可以对数字混沌直扩序列进行盲估计,仿真实验证明了该方法的有效性。