高密度互连印制板

本文阐述了RCC材料与化学蚀刻法制作高密度互连印制板的工序和详细方法,意在探寻最为经济、简单而又行 之有效的工艺。     

闪光灯泵浦Nd3+:GGG激光特性研究

用闪光灯泵浦掺钕钆镓石榴石(Nd^3 ：GGG)激光晶体，研究了脉冲宽度0．5ms、1ms、1．5ms和2ms的放电泵浦下激光输出，实验获得了1．92J的最大激光能量．     

超声波清洗在贵/廉金属复合材料生产过程的应用研究

本文结合“ODS清洗剂消费淘汰项目”的实施，并对新型超声波清洗机及新型ODS清洗液进行了工艺试验，阐述了超声波清洗技术是贵／廉金属复合材料生产过程中无可替代的清洗技术。     

协同作战能力简析

协同作战能力(CEC)是一种充分利用网络技术的新型海岸防空技术，给系统的作战能力带来了革命性的交破。本文对协同作战能力的产生、功能、组成以及未来的发展趋势作了详细的介绍，阐述了CEC系统的总体设计思想。在此基础上，将CEC系统与传统的作战系统的性能和设计思想在各方面进行了比较，交出了CEC系统各方面的优越性能。协同作战能力是现代和未来作战系统的发展方向，CEC系统的发展必将成为衡量各国国防科技现代化的重要指标。     

终端对业务和运营商的影响

详细分析了终端对话音业务和新业务的影响。在分析终端对话音业务的影响时从用户和终端两方面进行了阐述，指明为了进一步提高用户敷和砖络的使用率，运营商在进行话音营销对应逐渐将工作重点适当转向农村市场。也从对个人和行业用户的影响两方面阐明了终端对新业务的影响。     

移动运营商手机游戏业务的战略定位和发展策略探讨

分析了韩国、日本及国内运营商手机游戏业务的发展状况．探讨了手机游戏业务的模式．论述了该业务的战略定位和市场前景。从地区提供给移动通信市场对外部环境、产业链的准备是否充分以及运营商内部的资源和运营状况等三个方面阐明了手机游戏业务发展的关键因素。     

Implementation of RNS-Based Distributed Arithmetic Discrete Wavelet Transform Architectures Using Field-Programmable Logic

Currently there are design barriers inhibiting the implementation of high-precision digital signal processing (DSP) objects with field programmable logic (FPL) devices. This paper explores overcoming these barriers by fusing together the popular distributed arithmetic (DA) method with the residue number system (RNS) for use in FPL-centric designs. The new design paradigm is studied in the context of a high-performance filter bank and a discrete wavelet transform (DWT). The proposed design paradigm is facilitated by a new RNS accumulator structure based on a carry save adder (CSA). The reported methodology also introduces a polyphase filter structure that results in a reduced look-up table (LUT) budget. The 2C-DA and RNS-DA are compared, in the context of a FPL implementation strategy, using a discrete wavelet transform (DWT) filter bank as a common design theme. The results show that the RNS-DA, compared to a traditional 2C-DA design, enjoys a performance advantage that increases with precision (wordlength).     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

微机械可调谐滤波器的研制

利用 Ga As/Al Ga As分布反馈 Bragg反射镜在 Ga As衬底上制作了一个微机械的调谐滤波器 .该器件在 7V调谐电压下调谐范围达28nm