Optical imaging of anatomical maps derived from magnetic resonanceimages using time-independent optical sources

Presents a model suitable for computing images of absorption cross sections of thick tissue structures illuminated at near infrared (NIR) wavelengths from tomographic projection data. Image reconstruction is accomplished by solving a system of linear equations derived from transport theory. Reconstruction results using different algebraic solvers are shown for anatomical maps of the breast, derived from magnetic resonance imaging data, containing two simulated pathologies, in which case qualitatively good reconstructions were obtained. Evaluation of magnetic resonance (MR) data to optimize NIR optical tomographic imaging methods and to assess the feasibility of a combined MR-optical measurement scheme is discussed     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

A BiCMOS dynamic carry lookahead adder circuit for VLSIimplementation of high-speed arithmetic unit

A BiCMOS dynamic carry lookahead circuit that is free from race problems is presented. A 16 b full-adder test circuit, which has been designed based on a 2 μm BiCMOS technology, shows a more than five times improvement in speed as compared to the CMOS Manchester carry lookahead (MCLA) circuit. The speed advantage of the BiCMOS dynamic carry lookahead circuit is even greater in a 32- or 64-b adder     

Multiple negative-differential-resistance (MNDR) phenomena of ametal-insulator-semiconductor-insulator-metal (MISIM)-like structurewith step-compositioned InxGa1-xAs quantum wells

In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In_xGa_1-x As quantum wells has been fabricated and demonstrated. The interesting MNDR phenomena are found in the current-voltage (I-V) characteristics of this device. At room temperature, the triple switching behaviours and quadruple stable operation states are obtained. In addition, the sixfold switching behaviors and a staircase-shaped I-V characteristic are observed at -105°C. A sequential carrier accumulation at InGaAs subwells and the potential lowering process are used to qualitatively explain the interesting MNDR phenomena. From the experimental results, it is shown that the studied device has good potential in multiple-valued logic applications     

Design of finite-length metal-clad optical waveguide polarizer

The performance of optical metal-clad waveguide polarizers is analyzed in this paper with a view to optimizing the extinction ratio, a condition for which power of the TM mode is completely attenuated is identified here. In general, such a condition corresponding to an infinitely high extinction ratio can be met for a wide range of buffer layer thicknesses by selection of metal film thickness and polarizer length. When a very thick (e.g., semi-infinitely thick) metal film is used, the aforementioned condition can be met with a properly chosen buffer layer thickness and polarizer length. The numerical results show that all the polarizers designed here for realization of infinitely high extinction ratios have either quite low or reasonably acceptable attenuations for the TE mode     

Superconducting control for surge currents

Systems designed to use superconductors to limit fault currents in power grids are undergoing testing. The authors describe superconducting fault current limiters (SCFCL) which may be categorised into resistive or shielded core types. The features and operation of each type of device are outlined. Both the shielded-core and resistive types of SCFCL use the same amount of superconductor material to achieve a given limitation behavior. This is because the rated power per volume of conductor is determined by the product of fault-induced field and critical current, which is the same for both devices, assuming the same type of superconducting material is employed. The shielded-core limiter works only with AC currents and is much larger and heavier than the resistive SCFCL. While there is only one large program left in the low-temperature type of SCFCL, more than 10 major projects are under way worldwide on the high-temperature type of device. The main reason is the lower HTS cooling cost     

A new space-vector-modulated control for a unidirectionalthree-phase switch-mode rectifier

A unidirectional three-phase switch-mode rectifier that delivers sinusoidal input currents in phase with the corresponding input phase voltages is proposed and analyzed in this paper. In the proposed topology, three AC switches are placed before the bridge rectifier and, respectively, across two power lines. A simple control scheme combing space-vector modulation and hysteresis current control is presented. Sinusoidal input line currents are observed in experimental results     

Double-diffusive convection for a heated cylinder submerged in a salt-stratified fluid layer

Double-diffusive convection due to a cylindrical source submerged in a salt-stratified solution is numerically investigated in this study. For proper simulation of the vortex generated around the cylinder, a computational domain with irregular shape is employed. Flow conditions depend strongly on the thermal Rayleigh number, Ra _T , and the buoyancy ratio, R _ρ. There are two types of onset of instability existing in the flow field. Both types are due to either the interaction of the upward temperature gradient and downward salinity gradient or the interaction of the lateral temperature gradient and downward salinity gradient. The onset of layer instability due to plume convection is due to the former, whereas, the onset of layer instability of layers around the cylinder is due to the latter. Both types can be found in the flow field. The transport mechanism of layers at the top of the basic plume belongs to former while that due to basic plume and layer around the cylinder are the latter. The increase in Ra _T reinforces the plume convection and reduces the layer numbers generated around the cylinder for the same buoyancy ratio. For the same Ra _T , the increase of R _ρ suppresses the plume convection but reinforces the layers generated around the cylinder. The profiles of local Nusselt number reflects the heat transfer characteristics of plume convection and layered structure. The profiles of averaged Nusselt number are between the pure conduction and natural convection modes and the variation is due to the evolution of layers. Received on 13 September 1996     

An analytical grain-barrier height model and its characterizationfor intrinsic poly-Si thin-film transistor

An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range     

高可靠镀Ni／Au工艺及其在微波PTFE电路上的应用

介绍了高可靠电镀Ｎｉ／Ａｕ工艺在ＰＴＦＥ微波印制电路上的应用，并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ｎｉ／Ａｕ镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比，在软基材ＰＴＦＥ敷铜箔板上镀Ｎｉ／Ａｕ工艺能大大提高微波电路的可焊性，高温稳定性和长期可靠性，并且用其所制作的微波器件的高频性能也优于直接镀金工业。