拟矩形剖分上的样条空间的维数

矩形剖分~(记为$\Delta_{QR}$)~是指在矩形剖分~(记为$\Delta_{R}$)的基础上进行局部修改后得到的剖分,通常包括T-剖分~(记为$\Delta_{T}$)~和L-剖分~(记为$\Delta_{L}$).本文利用光滑余因子协调方法讨论了该剖分上的二元样条空间$S^\mu_k(\Delta_{QR})$的维数.在满足一定约束条件下, 得到了仅依赖于样条空间的次数,光滑度和剖分拓扑结构的显式维数公式.     

Freidlin-Wentzell's large deviations for homeomorphism flows of non-Lipschitz SDEs

We prove a Freidlin-Wentzell large deviation principle for multi-dimensional stochastic differential equations with non-Lipschitz coefficients and apply it to the Brownian motion on the diffeomorphism group of the disc constructed recently by Airault, Malliavin and Thalmaier.     

用TL16C550C芯片实现DSP与PC机的串行通信

采用TI公司的通用异步接收发送设备(UART)芯片完成数字信号处理器(DSP)与PC机之间的串行通信,可以避免常规的对DSP的多通道缓冲串口(MCBSP)复杂的软件编程模拟,不仅编程简单,传输能力强,而且实时性好,可靠性高.文中简单介绍了一种UART芯片TL16C550C,并给出了它与TMS320VC5402连接的硬件电路以及软件编程方法.     

Application of Al/PI composite bumps to COG bonding process

This work demonstrates the probing, testability and applicability of Al/PI (aluminum/polyimide) composite bumps to the chip on-glass (COG) bonding process for liquid crystal display (LCD) driver chip packaging. The experimental results showed that the thickness of Al overlayer on PI core of the bump, the location of pin contact, and the bump configuration affect bump probing testability. The bump with type IV configuration prepared in this work exhibited excellent probing testability when its Al overlayer thickness exceeded 0.8 μm. We further employed Taguchi method to identify the optimum COG bonding parameters for the Al/PI composite bump. The four bonding parameters, bonding temperature, bonding time, bonding pressure and thickness of Al overlayer are identified as 180° C, 10 s, 800 kgf/cm² and 1.4 μm, respectively. The optimum bonding condition was applied to subsequent COG bonding experiments on glass substrates containing Al pads or indium tin oxide (ITO) pads. From the results of resistance measurement along with a series of reliability tests, Al pad is found to be a good substrate bonding pad for Al/PI bump to COG process. Excellent contact quality was observed when the bumps had Al overlayer thickness over 1.1 μm. As to the COG specimens with substrate containing ITO pads, high joint resistance suggested that further contact quality refinement is necessary to realize their application to COG process     

Electronic structure and chemical bonding of the dimer of bis(η5-cyclopentadienyl)ytterbium methyl

The electronic structure, charge distribution, and chemical bonding of the dimer of bis-(η⁵-cyclopentadienyl)ytterbium methyl have been studied by an unrestricted INDO program made applicable for the lanthanoid compounds [1]. The bond order, composition, and the nature of the bridge bonds have been discussed. The existence of weak interaction between two ytterbium atoms was shown.     

Deep levels in superlattices

The physics governing deep levels in superlattices and quantum wells is elucidated, with emphasis on the importance of shallow-deep transitions caused by a band edge passing through a deep level, and the accompanying change in doping character of the impurity.     

The Synthesis of a New Macrocyclic Dinucleating Ligand,3,6,9,17,20,23-Hexaaza-29,30-Dihydroxy-13,27-Dimethyl-Tricyclo[23,3,1,1~(11,15)]Triaconta-1(28),11,13, 15(30),25,26-Hexaene

Thecoordinationchemistryofbinuclearmetalcomplexeshasbeenasubjectofextensiveinvestigationrelatingtothesynthesisofmodelcompoundsforthemetal-bindingsitesofmetal1oproteinsthatrequirethepresenceoftWometalcentersl.Duringthe1astdecade,anumberofsyntheticstructuraImodeIsfortheseproteinswiththeuseofseveraltypesofligandshavebeenreportedinIiterature2-4.ForIigandswithanappropriatedispositionofdonoratoms,ithasbeenpossibletoshowthepresenceofhydroxo,imidazolato,azido,andthiocyanatobridgesbetweenmetalions5.T…     

Study on thermal decomposition kinetics of N,N′-bis(5,5-dimethyl-2-phospha-2-thio-1,3-dioxan-2-yl)ethylenediamine in air

The thermal decomposition kinetics of the N,N′-bis(5,5-dimethyl-2-phospha-2-thio-1,3-dioxan-2-yl) ethylenediamine (DPTDEDA) in air were studied by TGDTG techniques. The kinetic parameters of the decomposition process for the title compound in the two main thermal decomposition steps were calculated through the Friedman and Flynn-Wall-Ozawsa (FWO) methods and the thermal decomposition mechanism of DPTDEDA was also studied with the Coats-Redfern and Achar methods. The results show that the activation energies for the two main thermal decomposition steps are 128.03 and 92.59 kJ·mol⁻¹ with the Friedman method, and 138.75 and 106.78 kJ·mol⁻¹ with the FWO method, respectively. Although there are two main thermal decomposition steps for DPTDEDA in air, the thermal decomposition mechanism of DPTDEDA in the two steps are the same, i.e. f(α) = 3/2(1 − α)^4/3[(1 − α)^−1/3 − 1]⁻¹. __________ Translated from Acta Chimica Sinica, 2008, 66(9) (in Chinese)