光学和电子束曝光系统之间的匹配与混合光刻技术

介绍如何实现光学和电子束曝光系统之间的匹配和混合光刻的技术，包括：(1）光学曝光系统与电子束曝光系统的匹配技术；(2）投影光刻和JBX-5000LS混合曝光技术；(3）接触式光刻机和JBX-5000LS混合曝光技术；(4）大小束流混合曝光技术或大小光阑混合曝光技术；(5）电子束与光学曝光系统混合光刻对准标记制作技术. 该技术已成功地应用于纳米器件和集成电路的研制工作，实现了20nm线条曝光，研制成功了27nm CMOS器件；进行了50nm单电子器件的演试；并广泛地用于100nm化合物器件和其他微/纳米结构的制造.     

基于SFBC的MIMO-OFDM在频率选择性信道中的应用

针对于多径时延引起频率选择性衰落信道，在MIMO-OFDM的基础上采用了一种空频分组编码（space-frequency block coder——SFBC）技术。空频分组编码是在OFDM符号基础上，对一个OFDM符号中的子载波进行分组编码，使得同一帧上子载波在不同的天线上发送。现给出了SFBC编码及其解码算法，并在不同多径时延衰落条件下进行了仿真，验证了SFBC对于频率选择性衰落系统性能的改善。     

系统优化在电信业务运营商运行维护中的意义

以中国联通网络中DWDM系统和SDH系统为例，阐述网络优化和传输设备的系统优化过程以及优化在网络维护中的意义。     

浅析新形式下开设电子设计实验公共选修课

为适应高校实验教学改革的要求,我们面向全校开设了“电子设计实验”公共选修课,此举在全校同学中引起了强烈反响。作为实验教学的一种尝试。本文仅对在我校开设电子设计公共选修课的意义和实验方法等进行了探讨。     

Phase Retrieval for Probability Distributions on Quantum Groups and Braided Groups

For nilpotent quantum groups [as introduced by Franz et al. ⁽⁷⁾], we show that (in sharp contrast to the classical case) the symmetrization of a probability distribution and the first moments of together determine uniquely the original distribution .     

Selfaligned AlGaAs/GaAs HBT grown by MOMBE

The very low parasitic resistance n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBT) grown by metal organic molecular beam epitaxy (MOMBE) using all gaseous source dopants are reported. The carbon and tin dopants were introduced through the uses of trimethygallium (TMGa) and tetraethyltin (TESn). To achieve the low parasitics, the graded InGaAs emitter cap layer was doped with tin to 5*10/sup 19/ cm/sup -3/ and the doping level in the subcollector was 3*10/sup 18/ cm/sup -3/. The emitter and collector sheet resistances were 25 Omega / Square Operator and 10 Omega / Square Operator , respectively. The 800 AA thick base layer was carbon doped to a level of 7*10/sup 19/ cm/sup -3/. The base contact resistance and sheet resistance were 0.1 Omega mm and 180 Omega / Square Operator , respectively. With a thin AlGaAs surface passivation layer for the emitter-base junction, the common emitter DC current gain was maintained up to 25, even for 2*5 mu m/sup 2/ emitter size devices. The unity short circuit current gain cutoff frequency f/sub T/, and maximum oscillation frequency f/sub max/, were 48 and 63 GHz, respectively.<>     

ON TAYLOR'S CONJECTURE ABOUT THE PACKING MEASURES OF CARTESIAN PRODUCT SETS

1.IntroductionInthegeometryoffractals,Hausdorffmeasurealiddimensionplayaveryimportantrole.Olltheotherhand,therecelltilltroductionofpackingmeasureshasledtoagreaterunderstandillgofthegeometrictheoryoffractals,aspackingmeasuresbehaveillawnythatis'dual'toHausdoofmeasure8inmanyrespectsl2].Forexample,denotingHausdorffdimellsionandpackingdimensionbydimandDimrespectively,wehavedim(ExF)2dimE dimF,whileDim(ExF)5DimE DimF.Itiswell-kllowenthatifECRm,FCR",thenH(ExFW1T2)2b'H((E,W1)H(FW2)forsome…     

相移测量技术中相移器研究

本文介绍一种用于相移测量技术的相移器。该相移器由计算机通过Ｄ／Ａ接口板自动控制输出电压幅度，其电路采用闭环控制，位移由压电晶体产生，具有很高的电压稳定度（０１％）和较小的相移误差（小于３°）。描述相移器的结构、驱动源工作原理及相移器标定方法     

6,8-二甲基-1,2,4-三唑并嘧啶-3-丁二酮基硫醚酮-烯醇互变异构平衡的1HNMR研究

用１ＨＮＭＲ方法研究了不同溶剂和温度对６，８－二甲基－１，２，４－三唑并嘧啶－３－丁二酮基硫醚酮－烯醇互变异构平衡的影响，发现温度升高有利于平衡向酮式转变，而溶剂极性的改变对平衡的影响并不规律，获得了四种溶剂中的ΔＨ和ΔＳ．     

CMOS／BESOI电特性的温度依赖性研究

采用Ｉ－Ｖ测试技术，研究了ＣＭＯＳ／ＢＥＳＯＩ器件的Ｉ－Ｖ亚阈特性与温度的关系。结果表明，随着温度的升高，Ｉ－Ｖ曲线的亚或斜率减小，且阈电压漂移增加。