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21.
不完全信息群体决策专家权重的集结 总被引:8,自引:5,他引:3
本文对于属性权重信息和属性效用信息都不完全的群体多属性决策问题,通过构造属性值区间和运用系统聚类分析法,对群体决策中的专家进行分类,并确定每位专家的权重. 相似文献
22.
以CF4和C6H6的混合气体作为气源,在微波电子回旋共振化学气相沉积(ECRCVD)装置中制备了氟化非晶碳薄膜(aC:F),并在N2气氛中作了退火处理以考察其热稳定性.通过傅里叶变换红外吸收谱和紫外可见光谱获得了薄膜中CC双键的相对含量和光学带隙,发现膜中CC键含量与光学带隙之间存在着密切的关联,在高微波功率下沉积的氟化非晶碳膜具有低的光学带隙和较好的热稳定性.
关键词:
氟化非晶碳膜
光学带隙
退火温度
热稳定性 相似文献
23.
Zhang Li Chun Jin Hai Yan Ye Hong Fei Gao Yu Zhi Ning Bao Jun Mo Bang Xian 《Electron Devices, IEEE Transactions on》2002,49(6):1075-1076
A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm2. The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively 相似文献
24.
L.V. Zolotukhina Ye.V. ZabolotskayaYe.V. Arkhipova M.G. Zuev 《Journal of Physics and Chemistry of Solids》2002,63(3):415-418
Phase equilibria in the Sc2O3-V2O5-Nb2O5-Ta2O5 system and properties of ScNb2−2xTa2xVO9 phases were studied by X-ray phase analysis, optical and radio spectroscopy. A continuous series of solid solutions was shown to exist at 0≤x≤1. V(IV) centers with different crystallographic surrounding were detected for all the considered compositions. A correlation between the number of V(IV) ions and the width of the forbidden gap in the solid solutions was found. 相似文献
25.
Xuetian Huang Lei Zhang Min Zhang Peida Ye 《Photonics Technology Letters, IEEE》2005,17(7):1423-1425
The performance degradation of differential quadrature phase-shift keying (DQPSK) wavelength-division-multiplexed (WDM) systems due to self-phase modulation (SPM)- and cross-phase modulation (XPM)-induced nonlinear phase noise is evaluated in this letter. The XPM-induced nonlinear phase noise is approximated as Gaussian distribution and summed together with the SPM-induced nonlinear phase noise. We demonstrate that 10-Gb/s systems, whose walkoff length is larger than 40-Gb/s systems', are more sensitive to XPM-induced nonlinear phase noise than 40-Gb/s systems. Furthermore, DQPSK WDM systems show lower tolerance to both SPM- and XPM-induced nonlinear phase noise than differential phase-shift keying WDM systems. 相似文献
26.
介绍了Multisim8的仿真功能的特点,并通过实例说明了用Multisim8进行仿真分析的具体方法,简单介绍了如何设置参数和进行仿真操作。 相似文献
27.
An experimental study of an optical burst switching network based on wavelength-selective optical switches 总被引:1,自引:0,他引:1
Li Xinwan Chen Jianping Wu Guiling Wang Hui Ye Ailun 《Communications Magazine, IEEE》2005,43(5):S3-10
In this article we report the system structure and test results of an experimental optical burst switching network with three edge router's and one core node. Wavelength-selective switches developed for this system and their characteristics are depicted. The implementation and performance of our new scheme for the just-in-time protocol are described. We also report experimental results of FTP and VOD services on this system. Some parameters, including traffic rate, average burst data length, and assembly time, are studied. 相似文献
28.
Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction 下载免费PDF全文
Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV-Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms. 相似文献
29.
简单介绍了广州地铁二号线民用移动通信工程概况,并就地铁民用移动通信系统引入地铁的主要技术难点进行了论述。 相似文献
30.
Amorphous silver, copper, gold, and iron films of a thickness between 6 and 350 nm are grown on polymeric substrates by vacuum
evaporation. The nanostructure of the films is investigated. The dependence of the conductivity on the film thickness is obtained,
and a correlation between the surface morphology and the conductivity is established. 相似文献