Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

关于一类具有相同非负群逆和M-P逆的非负矩阵的进一步研究

1引言设A是n阶非负方阵．设矩阵方程(1)AXA=A,(2)XAX=X,(3)(AX)~T= AX,(4)(XA)~T=XA,(5)AX=XA．A具有非负广义逆是指存在非负方阵X满足方程(1)～(4),并记为A~(?)．A具有非负群逆是指存在非负方阵X满足方程(1),(2),(5),并记为A~#．在A~(?)存在的前提下,两者相同的充分必要条件有(a)AA~(?)=A~(?)A；(b)A~(?)=p(A),其     

Vanadium valency charge state in solid solutions ScNb2−2xTa2xVO9

Phase equilibria in the Sc₂O₃-V₂O₅-Nb₂O₅-Ta₂O₅ system and properties of ScNb_2−2xTa_2xVO₉ phases were studied by X-ray phase analysis, optical and radio spectroscopy. A continuous series of solid solutions was shown to exist at 0≤x≤1. V(IV) centers with different crystallographic surrounding were detected for all the considered compositions. A correlation between the number of V(IV) ions and the width of the forbidden gap in the solid solutions was found.     

Impact of nonlinear phase noise on direct-detection DQPSK WDM systems

The performance degradation of differential quadrature phase-shift keying (DQPSK) wavelength-division-multiplexed (WDM) systems due to self-phase modulation (SPM)- and cross-phase modulation (XPM)-induced nonlinear phase noise is evaluated in this letter. The XPM-induced nonlinear phase noise is approximated as Gaussian distribution and summed together with the SPM-induced nonlinear phase noise. We demonstrate that 10-Gb/s systems, whose walkoff length is larger than 40-Gb/s systems', are more sensitive to XPM-induced nonlinear phase noise than 40-Gb/s systems. Furthermore, DQPSK WDM systems show lower tolerance to both SPM- and XPM-induced nonlinear phase noise than differential phase-shift keying WDM systems.     

Fluoroalkylation of aromatics: An intramolecular radical cyclization of 4-chloro-1,1,2,2,3,3,4,4-octafluorobutylbenzenes

In the presence of sodium dithionite and DMSO, the intramolecular radical cyclization of 4-chloro-1,1,2,2,3,3,4,4-octafluorobutylbenzenes is achieved to give the corresponding cyclic compounds in moderate to good yields.     

Silicon-to-steel bonding using rapid thermal annealing

This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests.     

基于Multisim8的压控振荡电路仿真分析

介绍了Multisim8的仿真功能的特点，并通过实例说明了用Multisim8进行仿真分析的具体方法，简单介绍了如何设置参数和进行仿真操作。     

An experimental study of an optical burst switching network based on wavelength-selective optical switches

In this article we report the system structure and test results of an experimental optical burst switching network with three edge router's and one core node. Wavelength-selective switches developed for this system and their characteristics are depicted. The implementation and performance of our new scheme for the just-in-time protocol are described. We also report experimental results of FTP and VOD services on this system. Some parameters, including traffic rate, average burst data length, and assembly time, are studied.     

Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films

Transition-metal compound TiC₆₀ thin films were grown by co-deposition from two separated sources of fullerene C₆₀ powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C₆₀ structure with certain amount of sp³ bonds and a rough surface with a large number of nanoclusters. z–V tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm² and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE. The respective field enhancement factors are estimated to be 99–355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC₆₀ thin films can be ascribed to structural variation of C₆₀ in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C₆₀ matrix.     

三核铜（I）配合物的合成与荧光光谱

室温下，通过双核配合物[Cu(dppm)(NO3)]2(dppm=双二苯基膦甲烷)与四苯基硼钠在甲醇和二氯甲烷混合溶剂中反应制备了三核铜(I)配合物[Cu3(dppm)3(NO3)(OH)](NO3)，经过红外光谱、热重分析、核磁和ES-MS等现代分析手段表征了配合物的物理化学性质，并进一步研究了配合物在室温下的荧光光谱特征。