工作流技术及其应用研究

文章介绍了工作流技术及其发展历史,对工作流的系统模型进行了详细分析,探讨了工作流技术在企业管理信息系统中的实际应用。     

基于"层"模式的双机容错系统

容错技术广泛应用于各个行业来保证系统的冗余和可靠性。文章在分析比较当前的双机容错系统的性能优缺点后,提出了一种全新的基于“层”模式的双机容错系统解决方案。按照这种模式,可以从链路层到应用层构建一个通用的系统级的双机容错系统。文章对其实现的关键技术进行了阐述。     

Temperature effects on surface activity and application in oxidation of toluene derivatives of CTAB-SDS with KMnO4

The γ_cmc values of CTAB-SDS decrease from 63.67 mN/m at 10‡C to 36.38 mN/m at 90‡C, slightly lower than those of either CTAB or SDS. Correspondingly, the CMC of CTAB-SDS decreases almost by half. The increase of surface activity of CTAB-SDS can be attributed to the relatively weak electrostatic interaction at high temperature, which is supported by the increase of solubility of CTAB-SDS with rise in temperature. Catalytic effect on oxidation of toluene derivatives with potassium permanganate follows the order CTAB-SDS > SDS > CTAB. This is not caused by the dissociative effect of CTAB-SDS with low surface activity at low temperature, as seen from the fact that almost all oxidative products can be retrieved for different toluene derivatives and surfactants by mimicking the conditions of reaction. In the emulsifications of toluene derivatives at 90‡C, the time that turbid water layers of surfactant solutions take to become clear is the same as that of the catalytic effect on oxidation of toluene derivatives. Thus, it can be inferred that surfactants can improve the oxidation yields of toluene derivatives by increasing the contact between two reacting phases.     

M16C/62P在液晶电视制造中的应用

本文介绍M16C平台在先进的数字液晶电视技术以及硬件配置和软件算法方面的作用，同时也将讨论其他的LSI。此外，也为电视制造商用于26英寸或以上液晶电视提供主要解决方案。     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

16信道0.35μmCMOS/VCSEL光发射模块

研究了垂直腔面发射激光器 (VCSEL)及其列阵器件的光谱特性、调制特性、高频特性及与微电子电路的兼容性 ,将 1× 16的VCSEL与CMOS专用集成电路进行多芯片组装 (MCM ) ,混合集成为 16信道VCSEL光发射功能模块 .测试过程中 ,功能模块的光电特性及其均匀性良好 ,测量的 - 3dB频带宽度大于 2GHz.     

Study on the Complexity of the Bullwhip Effect

Recent years have witnessed a rapid growth of interest in the study of the dynamic behavior of replenishment rules of bullwhip effect. We prove that bullwhip effect and butterfly effect share a same the self-oscillation amplifying mechanism that is the ordering decisions the supplier self-oscillation amplify the perturbations brought by the errors in the processing of retailers' demand information. This results as an explicit self-similar structure of the sensitivity of the system to the initial values duty to the nonlinear mechanism. In this paper, the causes process of the bullwhip effect is described as the internal nonlinear mechanism and study on the complexity of bullwhip effect for order-up-to policy under demand signal processing. The methodology is based on fractal and chaotic theory and allows important insights to be gained about the complexity behavior of bullwhip effect.     

Using buried capacitor in LTCC-MLC balun

A novel chip-type ceramic balun designed in the 2.4 GHz ISM band frequency is presented. A buried capacitor is included in the balun, so that the length of the coupled transmission lines can be reduced and can be designed very easily. A meander or spiral broadside coupled-line is adopted to realise the proposed LTCC multi-layer balun. The measured performances of phase and amplitude balance for this LTCC-MLC balun show a good match with computer simulation     

微波体声波延迟线的电磁屏蔽

本文分析了微波体声波延迟线多层介质的电磁屏蔽效应，结果表明，全屏蔽方式可以有效地解决微波延迟线研制中的直通抑制问题。实验结果证实了理论分析。     

多层梯度层InGaAs（P）InPSAGM雪崩光电二极管

本文报道采用液相外延（ＬＰＥ）生长和传统光刻制管工艺研制出引入多层（三层或三层以上）中间能带隙过渡的吸收区、倍增区分离的ＩｎＧａＡｓ（Ｐ）／ＩｎＰ雪崩光电二极管（简称ＩｎＧａＡｓ（Ｐ）／ＩｎＰＳＡＧＭＡＰＤ），其技术指标为：击穿电压ＶＢ＝４０～９０Ｖ；０．９ＶＢ时的暗电流Ｉｄ最小可小于１０ｎＡ；１．３μｍ时光响应度Ｒｅ＝０．６～０．８Ａ／Ｗ，倍增因子Ｍ≥２０（Ｍｍａｘ＞４０），过剩噪声因子Ｆ≌５和较宽频带响应特性。