基于非平衡光纤干涉仪的窄线宽激光光源跳模实时测试方法

窄线宽激光器随机发生的跳模现象,是影响光学系统稳定的重要因素.激光器线宽窄往往意味着较长的谐振腔和较小的模间隔,从而给跳模的监测带来了难度.本文提出一种基于非平衡光纤干涉仪的窄线宽光源跳模测试方法,该方法将激光器跳模的频率变化转变为干涉仪的相位变化,并通过相位产生载波(PGC)调制解调技术来检测相位信息,从而实现对跳模过程的监测.该方法灵敏度高,能够长时间连续监控,测试效果优于Fabry-Pérot干涉仪,还可在kHz量级上测量窄线宽激光器的线宽,为单纵模窄线宽激光器研究提供有效的测试手段.     

Microstructure, bonding strength and thermal shock resistance of ceramic coatings on steels prepared by plasma electrolytic oxidation

Ceramic coatings were successfully prepared on steel by plasma electrolytic oxidation (PEO) in aluminate electrolyte and silicate electrolyte, respectively. The microstructure of the coatings including surface morphology, phase and element composition were studied by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The bonding strength between the ceramic coating and the substrate was tested using different methods including tensile tests and shearing tests. The thermal shock resistance of the coatings was also evaluated. The results indicated that coatings obtained in both electrolytes were porous and coarse. The average diameters of the pores were below 10 μm. PEO coatings obtained in aluminate electrolyte were composed of Fe₃O₄ and FeAl₂O₄, while those obtained in silicate electrolyte were in a noncrystal state. PEO coatings obtained in aluminate electrolyte showed similar change trend of tensile strength and shearing strength with increasing treating time, namely, a relatively high values with middle time treating and low value with short and long time treating. The best coating was the samples treated with 30 min, whose tensile strength was 20.6 MPa and shearing strength was 16 MPa. The tensile strength and shearing strength of coatings obtained in silicate electrolyte were not strongly influenced by the treating time, the values of which were range in 14 ± 2 MPa and 11 ± 2 MPa, respectively. Coatings obtained in both electrolytes showed the best thermal shock resistance with middle time treating. Coatings obtained in silicate electrolyte show a little better thermal shock resistance than those obtained in aluminate electrolyte.     

Exact solutions to a coupled modified KdV equations with non-uniformity terms

The bilinear form of a coupled modified KdV equations with non-uniformity terms is given and a few soliton solutions are obtained. Furthermore, the multisoliton of the coupled system is expressed by Pfaffian.     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构

在蓝宝石衬底上生长了以AlN/GaN超晶格准AlGaN合金作为势垒的HEMT结构材料,并与传统AlGaN合金势垒样品进行了对比.在高Al组分(≥40%)情况下,超晶格势垒样品的表面形貌明显改进,电学性能特别是2DEG面电子浓度也有所改进.对超晶格势垒生长参数进行了初步优化,使得HEMT结构薄层电阻进一步降低,最后获得了251 Ω/□的薄层电阻. 关键词： AlGaN/GaN 结构 AlN/GaN超晶格 二维电子气 高电子迁移率晶体管     

A High‐Efficiency All‐Fiber Laser Operated in High‐Order Mode using Ring‐Core Yb‐Doped Fiber

An all‐fiber laser generating a cylindrical vector beam is proposed and demonstrated using a home‐made ring‐core Yb‐doped fiber (RC‐YDF). In the RC‐YDF, not only annular doping but also ring‐type beam pump is realized. This is believed to be the first report describing the realization of annular doping and ring‐type beam pump in active fiber simultaneously, which can enhance the efficiency for high‐order mode oscillation. This laser operates in the high‐order mode stably with a slope efficiency of as high as 55.7%. Cylindrical vector modes can be obtained easily through adjusting the polarization controller. This work may have great potential for providing high‐efficiency and high‐power cylindrical vector beam and vortex beam sources.     

980nm半导体激光器输出光谱特性的改善

为了改善980nm半导体激光器的输出光谱特性,采用传输矩阵分析法推导了双布喇格光纤光栅谐振腔的传输表达式,对布喇格光纤光栅长度和谐振腔腔长对输出光谱的影响进行模拟仿真,结果表明布喇格光纤光栅长度对输出光谱的影响大于谐振腔腔长对输出光谱的影响,加长布喇格光纤光栅长度能压缩输出光谱线宽.在980nm半导体激光器尾纤上写入不同布喇格光纤光栅长度的双布喇格光纤光栅谐振腔,验证了引入双布喇格光纤光栅谐振腔在压缩980nm半导体激光器输出光谱线宽的同时改善了其输出光谱的稳定性.当环境温度在0~75℃范围内变化时,980nm半导体激光器输出中心波长仅变化0.06nm.     

基于菌紫质F态的永久光存储研究

在线偏振飞秒激光激发下, 菌紫质通过双光子光化学反应可以生成具有永久光致各向异性的蓝移产物F₅₄₀态. 基于F₅₄₀态的永久光致各向异性, 通过调控飞秒激光空间光场分布, 可以在菌紫质薄膜中实现永久光信息存储. 本文使用纯相位型空间光调制器调制飞秒激光光场, 在物镜焦平面上生成光学点阵图案, 可以将信息快速记录在菌紫质薄膜中. 同时, 通过改变入射激光偏振方向, 可以实现偏振复用光存储, 这在高密度光存储和数据加密领域具有潜在应用.     

核磁COLOC技术在一类多取代苯结构鉴定中的应用一类多取代苯结构的COLOC鉴定

通过非环前体的分子内成环反应,可合成一类多取代苯,对这类产物进行结构鉴定,有助于了解整个反应历程和机理。但取代基增多,势必导致各结构因素变得复杂,难以从各芳碳的经验计算式去推测各取代基所处的相对位置,而以一般的光、波谱方法也较难获得这类结构信息。实验表明,核磁COLOC技术是确定这类产物各取代基相对位置较为合适的方法,本文以NMR技术对这类产物进行了结构鉴定,并讨论了COLOC技术在确定其各取代基相对位置中的作用;同时通过对产物的结构确认,讨论了产物取代基间的相互作用所导致其芳碳化学位移实测值与经验计算值之间的差异,以及含氟基团对邻位芳碳的碳氟间三键偶合作用。     

镁离子内扩散铌酸锂研究(Ⅱ)—— X射线衍射和扫描电子显微镜表征

对不同扩散条件的铌酸锂单晶基片进行了X射线衍射分析(XRD)和扫描电子显微镜观察(SEM)。结果表明,在扩散表面富镁层出现一新相结构,可能是由Li-Mg-Nb-O组成的三元系相结构,这一新相被认为是镁离子内扩散的真正扩散源。并对晶格发生畸变、镁离子内扩散机理以及镁的扩散层折射率变化机理进行了分析和讨论。 关键词：