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571.
We present a finite-volume scheme for compressible Euler flows where the grid is cartesian and it does not fit to the body. The scheme, based on the definition of an ad hoc Riemann problem at solid boundaries, is simple to implement and it is formally second order accurate. Error convergence rates with respect to several exact test cases are investigated and examples of flow solutions in one, two and three dimensions are presented.  相似文献   
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Reversible proton-induced spin state switching of an FeIII complex in solution is observed at room temperature. A reversible magnetic response was detected in the complex, [FeIII(sal2323)]ClO4 ( 1 ), using Evans’ method 1H NMR spectroscopy which indicated cumulative switching from low-spin to high-spin upon addition of one and two equivalents of acid. Infrared spectroscopy suggests a coordination-induced spin state switching (CISSS) effect, whereby protonation displaces the metal-phenoxo donors. The analogous complex, [FeIII(4-NEt2-sal2323)]ClO4 ( 2 ), with a diethylamino group on the ligand, was used to combine the magnetic change with a colorimetric response. Comparison of the protonation responses of 1 and 2 reveals that the magnetic switching is caused by perturbation of the immediate coordination sphere of the complex. These complexes constitute a new class of analyte sensor which operate by magneto-modulation, and in the case of 2 , also yield a colorimetric response.  相似文献   
575.
A method allowing the determination of the formulation leading to the best fire retardancy properties is presented in the case of intumescent systems. The method consists in the determination of invariant physicochemical parameters deduced from TG analysis: invariant activation energy and invariant preexponentiel factor. The relation between the values given by an evaluation test (LOI) and the invariant activation energy is then discussed.  相似文献   
576.
We investigate the electrical properties and dopant profiles of boron emitters performed by plasma immersion ion implantation from boron trifluoride (BF3) gas precursor, thermally annealed and passivated by silicon oxide/silicon nitride stacks. High thermal budgets are required for doses compatible with screen‐printed metal pastes, to reach very good activation rates. However, if good sheet resistances and saturation current densities may be obtained, we met strong limitations of the implied open‐circuit voltage of the n‐type Czochralski silicon substrates, which is incompatible with high‐efficiency solar cells. Such limitations are not encountered with beamline where pure B+ ions are implanted. Efforts on the passivation quality may improve the implied open‐circuit voltage but are not sufficient. We provide experimental comparison between beamline and plasma immersion allowing us to discriminate the causes explaining this observation (implantation technique or ion specie used) and to infer our interpretation: The co‐implantation of fluorine seems to indirectly impact the lifetime of the core substrate after thermal annealing. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   
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