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31.
Analogue switch for very low-voltage applications 总被引:2,自引:0,他引:2
Munoz F. Ramirez-Angulo J. Lopez-Martin A. Carvajal R.G. Torralba A. Palomo B. Kachare M. 《Electronics letters》2003,39(9):701-702
A new analogue switch suitable for operation at very low-voltage supply in a standard CMOS technology is presented. The proposed switch is based on 'quasi-floating-gate' transistors and has a simple and compact structure. For illustrative purposes, two sample-and-hold circuits operating from a single supply voltage close to the threshold voltage of a transistor, and using the proposed technique, are presented. Experimental results obtained from prototypes in a 1.5 /spl mu/m CMOS technology are provided. 相似文献
32.
M A Fennir J A Landry H S Ramaswamy V G S Raghavan 《The Journal of microwave power and electromagnetic energy》2003,38(3):189-196
This study investigates the effect of extraction methods on the color of date syrup and the potential use of microwave power for syrup processing. Sugar solutions were extracted from dates by boiling, soaking and blending. Color and sugar content of the extracted solutions were measured, and the percentage of sugar extracted form the total fruit sugar determined. Boiling was found to be the most efficient method of extraction whereby 74% of total samples sugar was extracted. In contrast, only 54.2% of fruit sugar was extracted by blending and 42% by soaking. In addition, solutions extracted by soaking and blending had a foaming problem in the subsequent concentration process. The extraction method had no effect on the product final color. The extracted solution was concentrated using two heating methods: conventional and microwave heating at a 600 W capacity and a frequency of 2450 MHz applied at three power levels: 10, 7, and 6. In the heating process, 180 minutes were needed to achieve a 77% degrees Brix using convective heating, while it took 81, 138, and 166 minutes of microwave heating at power level 10, 7, and 6, respectively to achieve the same concentration. Water activity of the syrup was measured within a sugar content range of 50 to 80% degrees Brix and the sugar concentration at which the product is shelf stable was determined at 76%. 相似文献
33.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
34.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
35.
Stability analysis of the finite difference time domain scheme containing macromodels is presented. It is shown that for a stable macromodel, the stability of the combined scheme depends on the field interpolation at the macromodel boundary. The maximal allowable time step is shown to be much larger than for subgridding. 相似文献
36.
The effect of spin splitting caused by structural asymmetry (Rashba’s contribution) and bulk asymmetry (Dresselhaus’s contribution) on the magnetoconductance of two-dimensional structures with high mobility of charge carriers is studied. The theory of weak localization with regard to both of the contributions is developed. The theory is valid in the entire region of classically low magnetic fields for arbitrary relations between the frequencies of spin precession and elastic collisions. The suppression of the correction for antilocalization is demonstrated in the case of equal contributions of structural anisotropy and bulk anisotropy to the spin splitting. The effect of the contribution, cubic in the wave vector, to the spin splitting on the quantum magnetoresistance is studied. 相似文献
37.
It is well-known that noncoherent equal-gain combining (NC-EGC) is the simplest combining technique for noncoherent and differentially coherent communication systems. However, for nonidentical Nakagami-m channels (channels having nonuniform multipath intensity profile (MIP) and/or arbitrary non-integer fading parameters), the use of NC-EGC has three main disadvantages. First, its performance serves as a lossy upper bound to that of the optimum diversity combiner. Second, it results in complicated expressions for the system average error performance. Third, it incurs noncoherent combining loss (does not aid the use of diversity) at relatively low average signal-to-noise ratio (SNR). In this letter, we propose a modified version of the NC-EGC, which is a noncoherent combiner with weighting coefficients, to overcome the disadvantages of the conventional one. We show that this alternative combiner does provide improvements over the conventional N.C-EGC for all values of average SNRs, it does not incur any noncoherent combining loss, and it leads to a design of the receiver whose average error performance can be evaluated easily. 相似文献
38.
In self-organizing ad hoc networks, all the networking functions rely on the contribution of the participants. As a basic example, nodes have to forward packets for each other in order to enable multihop communication. In recent years, incentive mechanisms have been proposed to give nodes incentive to cooperate, especially in packet forwarding. However, the need for these mechanisms was not formally justified. In this paper, we address the problem of whether cooperation can exist without incentive mechanisms. We propose a model,based on game theory and graph theory to investigate equilibrium conditions of packet forwarding strategies. We prove theorems about the equilibrium conditions for both cooperative and noncooperative strategies. We perform simulations to estimate the probability that the conditions for a cooperative equilibrium hold in randomly generated network scenarios.. As the problem is involved, we deliberately restrict ourselves to a static configuration. We conclude that in static ad hoc networks where the relationships between the nodes are likely to be stab le-cooperation needs to be encouraged. 相似文献
39.
Solar cells based on SnO2/Cd0.4Zn0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I sc ≈ 21.2 mA/cm2, U oc ≈ 813 mV, and η = 14.7%). 相似文献
40.
Self-induced effects in a passive polarization-independent vertical-cavity semiconductor gate are investigated numerically and experimentally. We demonstrate all-optical seed-pulse extraction for synchronization of differential phase-shift keying and ON-OFF keying packets at 10 Gb/s. Our results provide evidence that vertical-cavity gates, exploiting saturable absorption in semiconductor quantum-wells, exhibit attractive performances in terms of efficiency, power consumption, and polarization independency. 相似文献