Computer-aided analysis of double drift region impatt diode

The results calculated by computer for the double drift region IMPATT diode oscillator on the 8 mm waveband are reported in this paper. A comparison between single and double drift devices concerning the power output and efficiency is given. The effect of doping profile, current density and RF voltage on the performances of these devices have also been investigated. The theoretical data of these double drift IMPATT oscillator and amplifier are provided.     

A simplified dispersion limit formula for IM/DD systems and itscomparison with experimental results

A simplified formula for the dispersion limit of single-mode-fiber intensity modulation/direct detection (IM/DD) systems is derived for arbitrary given normalized pulse width U, eye opening penalty X and source linewidth enhancement factor α. From the comparison with published theoretical analyses, computer simulation and experimental data, its validity and the limits of existing formulae are shown. Using this simple and general formula, one can easily obtain the dispersion limit of various fiber types under different working conditions in IM/DD systems     

Semilinear Differential Inclusions in Separable Banach Spaces

Ｓｅｍｉｌｉｎｅａｒ　Ｄｉｆｆｅｒｅｎｔｉａｌ　Ｉｎｃｌｕｓｉｏｎｓ　ｉｎ　Ｓｅｐａｒａｂｌｅ　Ｂａｎａｃｈ　ＳｐａｃｅｓＸｕｅＸｉｎｇｍｅｉ（薛星美）ａｎｄＳｏｎｇＧｕｏｚｈｕ（宋国柱）（ＤｅｐａｒｔｍｅｎｔｏｆＭａｔｈｅｍａｔｉｃｓ，Ｎａｎｊｉｎ...     

Vertical bridgman techniques to homogenize zinc composition of CdZnTe substrates

In order to improve the Zn homogeneity along the axial direction of CdZnTe boule, we have employed a modified Bridgman technique using a (Cd, Zn) alloy source in communication with the melt, whose temperature has been gradually changed from 800 to 840°C during growth. Electron probe microanalysis (EPMA) measurements of Zn composition in the boule shows an excellent homogeneity of Zn along the axis of the CdZnTe boule compared with results in a boule grown by using a fixed source temperature. We have performed a numerical simulation to obtain the approximate temperatures of additional heating and cooling needed to improve the radial Zn homogeneity. CdZnTe boule has been grown by seeded vertical Bridgman furnace with two zones of heater and cooler. Ultraviolet/visible spectroscopic measurements of Zn composition over the length of the boule indicate that the radial distribution of Zn composition is very homogeneous in the body region of the boule, where the radial variation of Zn composition is ±0.0005.     

High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7*10/sup 19//cm/sup 3/. To the authors' knowledge, this is the highest doping level reported using carbon. HBTs with a 20 AA spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BV/sub CEO/ were 7 and 6 V, respectively.<>     

Invasiveness of LiTaO/sub 3/ and GaAs probes in external E-O sampling

Disturbances of signals on a coplanar waveguide (CPW) induced by the presence of LiTaO/sub 3/ and GaAs electrooptic probes in external electrooptic (EO) sampling have been simulated and compared quantitatively. The finite-difference-time-domain method is used to simulate the full wave field around a coplanar waveguide on a GaAs substrate in an external EO sampling configuration. The results indicate that the induced signal disturbance, or invasiveness, of a LiTaO/sub 3/ probe is almost ten times that of a GaAs probe in terms of the magnitude of S/sub 11/, but that LiTaO/sub 3/ yields about two times the EO response for a given S/sub 11/ and optical probing wavelength. The transparency of LiTaO/sub 3/ to shorter wavelengths, however, allows an even higher sensitivity for this material relative to GaAs. The results suggest that these probes do not exhibit significant invasiveness (magnitude of S/sub 11/ smaller than -40 dB), if they are removed from contact by the distance of CPWs center conductor width.<>     

微结构量子器件

微结构量子器件是八十年代中期伴随着微结构物理的发展而出现的一种新的半导体器件,这种器件以量子力学原理工作,具有常规“经典”器件无法比拟的优异特性。本文在简要介绍了微结构系统电子状态的基础上,较详细地描述了量子谐振隧道器件以及量子线和量子点激光器的基本原理、特点及其应用前景。