A study on the electrical conductivity of multi-walled carbon nanotube aqueous solution

The electrical conductivity was investigated for multi-walled carbon nanotubes (MWNTs) dissolved in chloroform and toluene, respectively. The electrical conductivity remarkably increased with increase in the content of MWNTs, which is in accordance with Archie's equation . Furthermore, a hypothesis of the electronic transport process was proposed to explain the difference between the solution and the solid compound. In addition, the temperature dependence of the electrical conductivity shows that log σ vs. 1/T exist in a good linear relationship. The activation energy of the electrical conductivity decreased with increase in concentration and an inflexion was observed at 60 °C in MWNT/toluene solution.     

ADS7822及其在CO气体浓度监测仪中的应用

在介绍TI公司的12位串行、高速、微功耗A/D转换器ADS7822工作原理的基础上,以ADS7822在CO气体浓度监测仪的前向通道设计中的应用为例,讨论了它与AT2051单片机的硬件接口问题,给出了利用ADS7822进行A/D转换的51汇编语言程序,并做了详细注释.串行、微功耗及小型封装使ADS7822非常适合电池供电的智能便携式仪器采用.     

前缘弯掠斜流转子叶顶间隙流动特性数值分析

本文对前缘弯掠斜流转子叶顶间隙内的流动特性进行了数值分析。结果表明:叶顶间隙气流与主流发生卷吸而生成泄漏涡。泄漏涡作用的区域具有较低的压力分布。在叶片通道内,泄漏涡沿着与转子旋向相反的方向朝相邻叶片的压力面移动。大间隙时的泄漏涡比小间隙时强烈。低流量时泄漏涡的作用区域比高流量时大。在各种流量特性下,叶顶尾缘近吸力面区域都存在着二次间隙流。     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

一种基于服务质量的节能无线传感器网络MAC协议

为了平衡网络能耗与QoS,提出了一种基于服务质量的节能MAC协议-QE-MAC.该协议一方面采用由Hill等人提出的低能量载波侦听技术降低节点能耗,另一方面,采用冲突避免、回复确认、区分优先级和失败重传等机制确保分组传输的可靠性,以及使用业务固定短周期发起策略来解决分组接收的时延过大问题.模拟实验和测试结果都表明,QE-MAC能够以较低的网络能耗提供良好的QoS.     

On effective offloading services for resource-constrained mobile devices running heavier mobile internet applications

Rapid advances in wireless mobile network technologies and mobile handsets (MHs) facilitate ubiquitous infrastructure that can support a range of mobile services and applications in addition to conventional mobile Internet access. One recent trend is to effectively run desktop PC-oriented heavier applications on MHs. However, due to their miniature, portable size, MHs are resource-constrained and therefore, running these applications directly on an MH is not satisfactory given a user's expectations. To cope with this problem, this article proposes a novel offloading service that can seamlessly offload some of the tasks of a mobile application from an MH to nearby, resource-rich PCs (called surrogates). The system architecture and key components of the proposed offloading service are presented, prototyped, and evaluated. The results of experiments and simulations have demonstrated the effectiveness and efficiency of this offloading service for mobile applications.     

级数小于1的亚纯函数的Borel例外值

证明了当超越亚纯函数的级小于1时，其Norel例外值最多只有一个．由于存在任何级的整函数，因此一个例外值总可达到，故所得结果不能再改进。     

蓝宝石R面上ZnO薄膜的NH3掺杂研究

以NH₃为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH₃流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。     

基于USB的155 Mb/s码型发生器的研制

介绍了一种带USB接口的光的155Mb／s码型发生器。伪随机码和其他格式的码型由PC产生通过USB接口进入双口RAM，再经串并变换后由光发射模块发射。该系统可方便地设定各种格式的码型，并同时具备光接口和电接口，可广泛应用于光通信各种实验中，具有重要的实用价值。     

覆盖亚临界到临界区的制冷工质物性快速算法

为了在亚临界到临界点这个大范围内保证制冷剂物性计算的快速、稳定、可逆,提出将整个数据区间划分成若干个子区间分别进行隐式拟合,并且保证相邻子区间连接点处的连续与光滑,以及通过求分析解从隐式方程中得到显式物性计算式的方法.以美国国家标准局开发的程序REFPROP6.01的计算结果作为数据源,以R410A为例对该方法做了验证.得出快速物性计算公式的应用范围为饱和温度-60℃至临界温度,与NIST REFPROP 6.01的计算结果进行比较表明,计算速度快1500倍,平均相对偏差小于0.01%.