InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

Boundedness of commutators on homogeneous Herz spaces

The boundedness on homogeneous Herz spaces is established for a large class of linear commutators generated by BMO(R ⁿ ) functions and linear operators of rough kernels which include the Calderón-Zygmund operators and the Ricci-Stein oRfiUatory singular integrals with rough kernels. Project supponed in pan by the National h’atural Science Foundation of China (Grant No. 19131080) and the NEDF of China.     

YBa2Cu1-xCox(Cu1-yZny)2Oz体系的Co,Zn共同掺杂效应

本文报道通过对YBa₂Cu_1-xCo_x(Cu_1-yZn_y)₂O_z(0≤x,y≤0.1)体系晶体结构、氧含量、正常态电阻-温度关系、Hall效应以及超导临界温度等的综合测量,发现随着Co和Zn含量的增加,体系经历了从正交结构的超导金属向四方结构的非超导半导体的转变,超导临界温度T_c和载流子浓度n_h均迅速下降,Co 关键词：     

基于TC8830AF的智能语音卡结构与设计

本文描述一种基于８０３１单片机和ＴＣ８８３０ＡＦ语音处理器的ＰＣ机智能语音卡，通过软硬件设计解决了ＰＣ－８０３１－ＴＣ８８３０ＡＦ结构中的通讯问题。该语音卡在进行语音的合成、编辑和播放时，仅占用极少的ＰＣ机ＣＰＵ处理时间，能满足计算机系统进行实时语音合成的要求。     

High-frequency small signal AC and noise modeling of MOSFETs for RFIC design

High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and f_T characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

ON THE CONVERGENCE OF MULTIPLICATIVE ITERATIVE ALGORITHMS WITH INEXACT LINE SEARCH

1.IntroductionIntillspaperweanalyzetheconvergenceonmultiplicativeiterativealgorithmsfortheIninimizationofadiffcrentiablefunctiondefinedonthepositiveorthantofR".ThealgorithmissllggestedbyEggermolltl'],andisrelatedtotheEM[2](Expextation--Maximization)algoritllnlforPositronemissiontonlography[']andimagereconstructi..14].Wecollsidertheproblenl"linf(x)s.t.x20.Themultiplicativeiterativealgorithmshavethel'orlniforj=l,2,',n,withAhdeterminedthroughalinesearch.Whilelusem[5]establishedanelegantconv…     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

荧光显示管直丝氧化物阴极有效逸出功的计算

阴极的逸出功是表征阴极发射能力的物理量，求定荧光显示管直丝氧化物阴极有效逸出功时，因其零场发射电流密度难于准确取值，温度无法直接测量，显得困难，须予解决，为此提出了一种计算阴极有产逸出功的办法，对某显示管的发射欠佳和“低温高效”的两种氧化物阴极的有效逸出功进行计算，有效逸出功率是靠测量相关物理量再同计算得出，精度不很高，文中所用办法也不例外，但所得结果能反映阴极发射能力，所需仪器少，是实用方法。     

Color image retrieval based on hidden Markov models

In this correspondence, a new approach to retrieving images from a color image database is proposed. Each image in the database is represented by a two-dimensional pseudo-hidden Markov model (2-D PHMM), which characterizes the chromatic and spatial information about the image. In addition, a flexible pictorial querying method is used, by which users can paint the rough content of the desired images in a query picture. Image matching is achieved by comparing the query picture with each 2-D PHMM in the database. Experimental results show that the proposed approach is indeed effective.