Existence of the uniformly minimum risk equivariant estimators of parameters in a class of normal linear models

In this paper, we study the existence of the uniformly minimum risk equivariant (UMRE) estimators of parameters in a class of normal linear models, which include the normal variance components model, the growth curve model, the extended growth curve model, and the seemingly unrelated regression equations model, and so on. The necessary and sufficient conditions are given for the existence of UMRE estimators of the estimable linear functions of regression coefficients, the covariance matrixV and (trV)^α, where α > 0 is known, in the models under an affine group of transformations for quadratic losses and matrix losses, respectively. Under the (extended) growth curve model and the seemingly unrelated regression equations model, the conclusions given in literature for estimating regression coefficients can be derived by applying the general results in this paper, and the sufficient conditions for non-existence of UMRE estimators ofV and tr(V) are expanded to be necessary and sufficient conditions. In addition, the necessary and sufficient conditions that there exist UMRE estimators of parameters in the variance components model are obtained for the first time.     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

Boundedness of commutators on homogeneous Herz spaces

The boundedness on homogeneous Herz spaces is established for a large class of linear commutators generated by BMO(R ⁿ ) functions and linear operators of rough kernels which include the Calderón-Zygmund operators and the Ricci-Stein oRfiUatory singular integrals with rough kernels. Project supponed in pan by the National h’atural Science Foundation of China (Grant No. 19131080) and the NEDF of China.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

ON THE CONVERGENCE OF MULTIPLICATIVE ITERATIVE ALGORITHMS WITH INEXACT LINE SEARCH

1.IntroductionIntillspaperweanalyzetheconvergenceonmultiplicativeiterativealgorithmsfortheIninimizationofadiffcrentiablefunctiondefinedonthepositiveorthantofR".ThealgorithmissllggestedbyEggermolltl'],andisrelatedtotheEM[2](Expextation--Maximization)algoritllnlforPositronemissiontonlography[']andimagereconstructi..14].Wecollsidertheproblenl"linf(x)s.t.x20.Themultiplicativeiterativealgorithmshavethel'orlniforj=l,2,',n,withAhdeterminedthroughalinesearch.Whilelusem[5]establishedanelegantconv…     

荧光显示管直丝氧化物阴极有效逸出功的计算

阴极的逸出功是表征阴极发射能力的物理量，求定荧光显示管直丝氧化物阴极有效逸出功时，因其零场发射电流密度难于准确取值，温度无法直接测量，显得困难，须予解决，为此提出了一种计算阴极有产逸出功的办法，对某显示管的发射欠佳和“低温高效”的两种氧化物阴极的有效逸出功进行计算，有效逸出功率是靠测量相关物理量再同计算得出，精度不很高，文中所用办法也不例外，但所得结果能反映阴极发射能力，所需仪器少，是实用方法。     

Color image retrieval based on hidden Markov models

In this correspondence, a new approach to retrieving images from a color image database is proposed. Each image in the database is represented by a two-dimensional pseudo-hidden Markov model (2-D PHMM), which characterizes the chromatic and spatial information about the image. In addition, a flexible pictorial querying method is used, by which users can paint the rough content of the desired images in a query picture. Image matching is achieved by comparing the query picture with each 2-D PHMM in the database. Experimental results show that the proposed approach is indeed effective.     

一类广义几何序列的相关函数

计算序列的周期相关函数是一个很困难但又十分重要的问题。本文首次给出了线性相关广义几何序列的相关函数，从而部分地解决了Ｋｌａｐｐｅｒ提出的相关函数计算问题。     

Modeling and analysis of vias in multilayered integrated circuits

A method for modeling and analyzing vias the multilayered integrated circuits is presented. The model is based on microwave network theory. The whole via structure is divided into cascaded subnetworks, including a vertical via passing through different layers and transitions from the microstrip line and/or striplines to the vertical via. The parameters of each subnetwork are obtained from electromagnetic field analysis. Numerical results in the frequency domain and the time domain are presented. Validation of the model has been carried out by both measurements and finite-difference-time-domain (FDTD) modeling. The results show good agreement with the measurements in the frequency range for which the components of the experimental model are within specification. The time domain simulation results also agree well with the FDTD results     

A simple method improving the analyzing accuracy of circular groove guide

A simple method is introduced to improve the analysing accuracy of circular groove guide. With this method, the characteristic equation of circular groove guide is derived and its solution is given and discussed.The Project Supported by National Natural Science Foundation of P.R.China