一种拼接结构红外探测器的封装电学设计

随着红外焦平面探测器技术日趋成熟,由多片红外探测器组成更大规模探测器的需求也更为广泛。红外探测器往往采用多片拼接结构,达到扩大探测器阵列规模的目的。从2×2,3×3到4×4甚至更大规模的拼接结构,其拼接设计的核心均为封装结构设计。在封装结构设计中,如何进行电学引出设计,也是设计中非常重要的一个环节。文章介绍了一种红外探测器拼接结构的封装电学设计,首先介绍拼接结构的概况,然后介绍为满足该种结构的电学设计采用的结构方案,最后介绍针对该种电学设计结构方案进行的电学布线设计。     

CdCl2后处理的Mn掺杂钙钛矿纳米晶光学性能及其白光LED

Mn²⁺离子掺杂全无机钙钛矿(Mn²⁺∶CsPbX₃,X=Cl, Br)纳米晶(NCs)具有宽发射带、长斯托克斯位移和高量子产率等优势,在固态照明、光电探测和成像等领域有广阔应用前景。然而,目前Mn²⁺掺杂的钙钛矿晶体量子产率很难超过70%,如何改善发光效率,同时调控Mn离子发射中心成为构建高质量白光LED的关键。文章通过CdCl₂后处理技术,进行室温下阳离子交换,获得了高效发光的Cd²⁺和Mn²⁺共掺杂的CsPbCl₃纳米晶。Mn的发射波长可以从604 nm连续调控到624 nm,实现稳定的红光发射。Cd离子掺杂改善了Mn-Cl八面体的晶体场环境,使Mn衰减寿命提高到1.32 ms。此外,通过绿色CsPbBr₃纳米晶和蓝-橙双色Mn∶CsPb(ClBr)₃纳米晶构建了高显色指数的暖白光发光二极管(WLED),其流明效率达60 lm/W,显色指数超过85。     

InAs基范德华异质结界面电荷转移特性第一性原理计算的研究进展

由低维InAs材料和其他二维层状材料堆叠而成的垂直范德华异质结构在纳米电子、光电子和量子信息等新兴领域中应用广泛。探索跨结界面的电荷转移机制对于全面理解该类器件的非凡特性至关重要。第一性原理计算在揭示界面电荷转移特性与各种能量稳定型InAs基范德华异质结的电、光、磁等原理物理特性和器件性能变化之间的内在关系方面发挥着不可比拟的作用。文中梳理、总结和探讨了近年来InAs基范德华异质结间界面电荷转移特性的理论研究工作与潜在的功能应用,提出在理论方法和计算精度方面大力发展第一性原理计算的几个途径,为更好地开展InAs基范德华异质结的基础科学研究和应用器件设计提供可借鉴的量化研究基础。     

压电超声共振式风传感器风场闭环解算策略研究

为了能够在复杂环境下实现风速风向的高精度和高稳定性测量,在基于声学共振原理的风传感器系统的基础上,采用闭环控制扫描技术改进了系统的性能指标。采用声学共振的方式,同时对换能器产生的信号进行频率调制和强度调制,实现对超声换能器的线型扫描。频率调制解决了在不同压力、温度等环境因素影响下导致的共振频移的问题,强度调制解决了换能器性能随时间衰减问题,极大地提高了信噪比。实验结果表明,采用闭环控制的方法可以准确测量风速风向。风速测量范围0～50 m/s,风速测量精度为±0.5 m/s(≤15m/s)/±5%(>15 m/s且<35 m/s)/±9%(>35 m/s)。改进后的系统在复杂环境下受环境变化影响小、精度高、稳定性好、抗干扰能力强。     

基于改进DeepLabV3+的铣床碎屑图像分割方法

针对铣床碎屑形状不规则导致图像分割中碎屑轮廓不清晰、分割精度低的问题,本文提出一种改进的DeepLabV3+铣床碎屑分割算法。首先在DeepLabV3+的Xcepetion模块中嵌入通道与空间注意力机制(convolutional block attention module, CBAM)模型,优化通道的权重和位置信息,加强碎屑图像区域的特征学习;其次将DeepLabV3+的空洞空间卷积池化金字塔(atrous spatial pyramid pooling, ASPP)模块改为密集连接(dense conolutional network, DenseNet)方式,增大碎屑图像特征点的感受野,提升铣床碎屑图像特征的复用效率;最后在解码过程中采用多尺度自适应特征融合方法,聚合多尺度特征作为解码器的输入特征,提高碎屑图像分割的精度与鲁棒性。实验结果表明,本文算法优于其他分割算法,改进后算法相比DeepLabV3+,像素准确率提高0.026,平均交并比(mean intersection over union,MIOU)提高0.020,F₁值提高了0.013。     

Self-Adhesive Polydimethylsiloxane Foam Materials Decorated with MXene/Cellulose Nanofiber Interconnected Network for Versatile Functionalities

Polydimethylsiloxanes (PDMS) foam as one of next-generation polymer foam materials shows poor surface adhesion and limited functionality, which greatly restricts its potential applications. Fabrication of advanced PDMS foam materials with multiple functionalities remains a critical challenge. In this study, unprecedented self-adhesive PDMS foam materials are reported with worm-like rough structure and reactive groups for fabricating multifunctional PDMS foam nanocomposites decorated with MXene/cellulose nanofiber (MXene/CNF) interconnected network by a facile silicone foaming and dip-coating strategy followed by silane surface modification. Interestingly, such self-adhesive PDMS foam produces strong interfacial adhesion with the hybrid MXene/CNF nano-coatings. Consequently, the optimized PDMS foam nanocomposites have excellent surface super-hydrophobicity (water contact angle of ≈159^o), tunable electrical conductivity (from 10⁻⁸ to 10 S m⁻¹), stable compressive cyclic reliability in both wide-temperature range (from −20 to 200 ^oC) and complex environments (acid, sodium, and alkali conditions), outstanding flame resistance (LOI value of >27% and low smoke production rate), good thermal insulating performance and reliable strain sensing in various stress modes and complex environmental conditions. It provides a new route for the rational design and development of advanced PDMS foam nanocomposites with versatile multifunctionalities for various promising applications such as intelligent healthcare monitoring and fire-safe thermal insulation.     

Selenium Substitution in Bithiophene Imide Polymer Semiconductors Enables High-Performance n-Type Organic Thermoelectric

Designing n-type polymers with high electrical conductivity remains a major challenge for organic thermoelectrics (OTEs). Herein, by devising a novel selenophene-based electron-deficient building block, the pronounced advantages of selenium substitution in simultaneously enabling advanced n-type polymers is demonstrated with high mobility (≈2 orders of magnitude higher versus their sulfur-based analogues due to both intensified intra- and inter-chain interactions) and much improved n-doping efficiency (enabled by the largely lowered LUMO level with a ≈0.2 eV margin) of the resulting polymers. Via side chain optimization and donor engineering, the selenium-substituted polymer, f-BSeI2TEG-FT, achieves a highest conductivity of 103.5 S cm⁻¹ and power factor of 70.1 µW m⁻¹ K⁻², which are among the highest values reported in literature for n-type polymers, and f-BSeI2TEG-FT greatly outperformed the sulfur-based analogue polymer by 40% conductivity increase. These results demonstrate that selenium substitution is a very effective strategy for improving n-type performance and provide important structure-property correlations for developing high-performing n-type OTE materials.     

Vapor Phase Growth of Centimeter-Sized Band Gap Engineered Cesium Lead Halide Perovskite Single-Crystal Thin Films with Color-tunable Stimulated Emission

Single crystal metal halide perovskites thin films are considered to be a promising optical, optoelectronic materials with extraordinary performance due to their low defect densities. However, it is still difficult to achieve large-scale perovskite single-crystal thin films (SCTFs) with tunable bandgap by vapor-phase deposition method. Herein, the synthesis of CsPbCl_3(1–x)Br_3x SCTFs with centimeter size (1 cm × 1 cm) via vapor-phase deposition is reported. The Br composition of CsPbCl_3(1–x)Br_3x SCTFs can be gradually tuned from x = 0 to x = 1, leading the corresponding bandgap to change from 2.29 to 2.91 eV. Additionally, an low-threshold (≈23.9 µJ cm⁻²) amplified spontaneous emission is achieved based on CsPbCl_3(1–x)Br_3x SCTFs at room temperature, and the wavelength is tuned from 432 to 547 nm by varying the Cl/Br ratio. Importantly, the high-quality CsPbCl_3(1–x)Br_3x SCTFs are ideal optical gain medium with high gain up to 1369.8 ± 101.2 cm⁻¹. This study not only provides a versatile method to fabricate high quality CsPbCl_3(1–x)Br_3x SCTFs with different Cl/Br ratio, but also paves the way for further research of color-tunable perovskite lasing.     

四谱段TDICCD图像传感器的设计与制作

设计并研制了一种四谱段时间延迟积分电荷耦合器件(TDICCD)图像传感器,器件将四个TDICCD集成在同一芯片上,通过在光窗对应位置上镀不同的窄带滤光膜实现多谱段分光。该TDICCD图像传感器的像元尺寸为28μm×28μm,水平寄存器的有效像元数为3 072元,行频为10 kHz,电荷转移效率高达0.999 99,饱和输出电压为2 650 mV,抗弥散能力大于等于100倍,动态范围为7 143∶1。