An efficient numerical approach, for determining the dispersioncharacteristics of dual-mode elliptical-core optical fibers

Based on vectorial formulations which combine the surface integral equation method and the finite-element method, a novel numerical approach is proposed for calculating the dispersion coefficients of dual-mode elliptical-core fibers with arbitrary refractive index profiles. By differentiating the original formulations involving the propagation constant β and the guided mode fields H_x and H_y once and twice with respect to the normalized frequency V, the new formulations for {dβ/dV, dH_x/dV, dH_y/dV} and for {d²β/dV², d² H_x/dV², d²H_y/dV² } are obtained respectively. Once {β, H_x, H_y } is solved through the eigenvalue procedure which dominates the computing time, only a few matrix manipulations are required to obtain {dβ/dV, dH_x/dV, dH_y/dV} and {d²β/dV², d²H_x/dV² , d²H_y/dV²}. Some numerical examples are examined to see the influence of different refractive index distributions with dips on the dispersions of the four nondegenerate LP ₁₁ modes for elliptical-core fibers     

A CMOS differential buffer amplifier with accurate gain andclipping control

A CMOS fully differential buffer amplifier with accurate gain and clipping control is presented. The gain is made variable by controlling the amount of the feedback around the power amplifier by means of an additional gain control loop. A new clipping technique is used to control the clipping level of the amplifier. The amplifier is realized in a 1.2 μm CMOS process with a single 5 V power supply. Measurements confirm the presented techniques     

Recent advances in theory and applications of scrambling techniquesfor lightwave transmission

This paper discusses recent advances in the theory and applications of scrambling techniques for digital lightwave transmission. It introduces the theories of sequence space and shift register generator (SRG) space which enable systematic analysis and mathematical manipulation of the behavior of sequences in general and the related SRG's. It discusses the behavior and realization of frame synchronous scrambling (FSS) and distributed sample scrambling (DSS) with emphasis on parallel sequences and the related parallel SRG's (PSRG). In addition, it describes self synchronous scrambling (SSS). Then the paper applies the theories to today's lightwave transmission systems by demonstrating practical parallel designs of FSS for SDH/SONET transmission, DSS for cell-based ATM transmission, and SSS for SDH-based ATM transmission. It finally considers how DSS can be used for scrambling of mixed isochronous and nonisochronous data in future high-speed data networks. The paper employs various new concepts and terminology, such as PSRG engine, generating vector discrimination matrix, (M,N) PSRG, sampling vector, correction vector, correction matrix, predictable scrambling concurrent sampling, and immediate correction     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

Statistical computer-aided design for microwave circuits

A useful methodology for microwave circuit design is presented. A statistical technique known as Design of Experiments is used in conjunction with computer-aided design (CAD) tools to obtain simple mathematical expressions for circuit responses. The response models can then be used to quantify response trade-offs, optimize designs, and minimize circuit variations. The use of this methodology puts the designer's intelligence back into design optimization while making “designing for circuit manufacturability” a more systematic and straightforward process. The method improves the design process, circuit performance, and manufacturability. Two design examples are presented in context to the new design methodology     

Substrate-connected high voltage pumping circuits for low supplyvoltages

Novel high voltage pumping circuits for low supply voltages are proposed. Utilising a small pumping circuit and the new substrate-connected techniques can enhance charge transfer efficiency and eliminate the body effect at low supply voltages. Furthermore, a diode-connected transistor technique can improve the reverse charge sharing phenomenon when the output has a load current. With this technique high boosted voltages can be obtained at low supply voltages     

产量──密度模型讨论

本文给出产量与密度函数关系     

Highly compact AC-AC converter achieving a high voltage transferratio

This paper reports a new, highly integrated modular design approach for pulsewidth-modulation AC-AC converters based on a modular phase-bank structure. Novel high-power 3-in-1 integrated bi-directional power modules (IBPM) rated at 1200-V AC and 150 A and the 3-to-1 phase bank circuits have been successfully developed, fabricated and tested. This enables the modularity design of the multiphase converter systems and reduces the critical parasitic inductance. A theoretical analysis of the IBPM's silicon utilization for this new breed of direct power converters has been outlined. A lab prototype at medium power level has been successfully designed, implemented, and tested with good results. A nearly 460-VRMS out voltage at a 1:0.955 voltage transfer ratio, which, perhaps, is the highest performance reported so far in the literature, has been achieved by the novel two-side modulation control system. The converter-fed AC motor system is able to operate over the 0-240 Hz range with inherent regenerative capability and four-quadrant operation. Potential industrial applications are also briefly highlighted in this paper     

Quantitative dependence of MR signal intensity on tissue concentration of Gd(HP-DO3A) in the nephrectomized rat.

Cardiac-gated SE 20/224 +/- 20 MR images were obtained from nephrectomized rats before and after intravenously administering 153Gd-Gd(HP-DO3A). The concentration of Gd, [Gd], was linear in dose in myocardium, skeletal muscle, and blood. Under steady-state conditions, where d[Gd]/dt = 0, image intensities (IIN) in regions of interest were compared with the measured [Gd]. IIN was linear in myocardium at less than or equal to 0.61 mumol/g-myocardium (less than or equal to 0.5 mmol/kg dose) and in skeletal muscle at less than or equal to 0.63 mumol/g-muscle (less than or equal to 0.75 mmol/kg). Above 0.6 mumol Gd/g-tissue, IIN did not increase further. The in vivo data were consistent with measured ex vivo and in vivo relaxivities. A 29% greater slope for IIN versus [Gd] in myocardium [14,439 +/- 4350 IIN (mumol/g)] than in muscle [10,258 +/- 5,296 IIN/(mumol/g)] was attributed to a significant difference in blood content: 25% versus 2% weight blood in myocardium and skeletal muscle, respectively. Two components were apparent from plots of ex vivo 1/T1 versus [Gd] in myocardium and muscle, and only one for blood.     

A theoretical study of pulsed laser sampling photon amplifiers

Theoretical studies point to significant improvements in the performance of semiconductor laser amplifiers by injecting carriers with pulsed electric currents of sub-nanosecond duration. A pulsed Fabry-Perot amplifier (FPA) is most sensitive to input lightwave at the instant the carrier density is crossing the critical region, and gives a sharply pulsed sampling effect on the input lightwave signal. Compared with a FPA operating at subcritical electron density, the pulsed amplifier gives much higher gain, peak power, and bandwidth. In fact, pulsed operation of a FPA is also expected to give significantly higher gain and about the same peak output power as a traveling wave amplifier. Pulsed operation also improves the performance of a traveling wave amplifier by attenuating its internally reflected waves