An electrooptic intensity modulator with improved linearity

A highly linear electrooptic modulator has been designed, fabricated, and evaluated. The design of this modulator consists of only a simple modification to the directional coupler. Two-tone testing has demonstrated that, for an optical modulation depth of 30% per channel, the third-order intermodulation distortion is more than 30 dB lower than that of the conventional directional coupler or Mach-Zehnder modulators. This improvement was not observed to be accompanied by any increase in second harmonic distortion. Also included are results of two-tone computer simulations which predict the improvement in linearity of this device for a range of modulation depths.<>     

Two schemes for detecting CMOS analog faults

A design-for-testability scheme for detecting CMOS analog faults was reported by Favalli et al. (see ibid., vol.25, no.5, p.1239-46, 1990). The authors propose two alternative designs, one for small circuits and another for large circuits, which require significantly less area overhead (about 1/4 to 1/3) than that of Favalli's design. With the proposed modification in the first design, the untestable problem, which occurred in Favalli's design, can be alleviated. Furthermore, the proposed schemes are also fit to be implemented in VLSI circuits     

非因子化方法研究D~+→ ■~0K~+衰变(英文)

在领头阶和αs 修正阶 ,用QCD因子化方法 ,并对它的软胶子效应用光锥QCD求和规则分析D+ → K0 K+ 衰变过程 ,我们分析发现朴素因子化方法的结果远离实验结果 ,QCD因子化方法结果靠近实验结果 ,但是 ,在QCD因子化方法中 ,若考虑软胶子效应 ,其结果与实验结果相一致 .另外 ,计算发现 ,软胶子效应在该衰变道中有相当大的贡献 ,因此不能被忽略     

Controllability of Functional Integro-Differential Inclusions with an Unbounded Delay

In this paper, a sufficient condition is established for the controllability of neutral functional integro-differential inclusions with an unbounded delay in Banach spaces. The approach used is a fixed-point theorem for condensing maps due to Martelli and the theory of analytic semigroup of linear operators. Communicated by F. Zirilli Research supported by NNSF of China, by the Teaching and Research Award Program for Outstanding Young Teachers in Higher Education Institutions of the Ministry of Education of China, and by the Qing Lan Talent Engineering Fund QL-05-164 of Lanzhou Jiaotong University. The authors are grateful to Professor F. Zirilli and two anonymous referees for valuable suggestions improving this paper.     

Distributions of Chern Numbers of Complete Intersection Three Folds

((Without abstract)) Submitted: October 1996, final version: April 1997     

单糖的高效毛细管电泳间接紫外检测法研究

本文研究了单糖的毛细管电泳间接紫外检测法。实验发现选用β－哚吲乙酸－磷酸钠体系作为背景电解质比较理论想，用于９种未经衍生的单糖进行毛细管电泳分离和间接紫外检测可取得满意结果，对半乳糖，甘露糖和葡萄糖酸的检出极限为２－１０ｐｍｏｌ水平。本文还讨论了背景电解质浓度与样品响应值的关系以及各种操作条件的影响。     

Microstrip reflectarray antenna with offset feed

The authors derive and verify the concept of antenna focusing by a planar 'microstrip reflectarray' antenna. Experimental results from schematically distributed patch radiators with microstrip delay lines are consistent with the simulation results. The advantages and disadvantages of such an antenna are described. The measured overall antenna efficiency is approximately 48% at scan angles up to 30 degrees . These results demonstrate the feasibility of such an antenna.<>     

A hybrid wafer-dicing process for GaAs MMIC production

A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges     

四论注入光敏器件的物理基础

叙述了从现象的发现到理论分析，然后用实验进行验证，最后利用这个现象研制成注入光敏器件的全过程，从而证明注入光敏器件有牢靠的物理基础。本文还分析了文献（１￣５，１０）中的几个主要不同论点及欠妥的讨论方法。     

Theory of gain in quantum-wire lasers grown in V-grooves

Theoretical calculations of gain, refractive index change, differential gain, and threshold current for GaAs-AlGaAs quantum-wire lasers grown in V-shaped grooves are presented. The theoretical model is based on the density-matrix formalism with intraband relaxation, and the subband structure is calculated within the effective bond-orbital model. For the quantum-wire geometry treated, agreement with the observed subband spacings is found. Because of the small overlap of the optical field with the active region for a single quantum wire, lasing threshold is reached only when several subbands are filled