基于空时编码的MB-OFDM超宽带通信系统

基于MB-OFDM（多带正交频分复用）超宽带通信系统上，采用了两种特殊的空时（频）编码结构来改善系统性能。仿真结果表明，在修正的S-V信道模型下，该系统增大了传输速率，基于空时分组编码（STBC）结构的超宽带系统在低信噪比情况下可以获得较好的分集增益，而基于预编码的空时频编码（STFC）的超宽带系统的BER性能比单天线系统的BER性能更加优异．     

一种有效的圆形小幅员目标检测方法

提出了一种有效的圆形小幅员目标检测方法,首先对原始图像进行一定的预处理,并提取和细化边缘,通过有约束的边缘跟踪方法剔除大量的干扰背景边缘点和噪声,并以分段等间隔点组采样进行圆参数计算,大大减少了参数的无效累积.实验结果表明,该方法对复杂背景下圆形小幅员目标的检测结果可靠性高,实时性好.     

基于OpenGL的激光探测系统视景仿真

基于典型导弹、雷达和主战坦克几何模型及作战环境,应用OpenGL技术建立导弹、雷达、坦克目标和战场环境的三维视景模型,并通过对探测器、导弹、目标和环境在不同属性参数设置下弹目交会过程的模拟,实现虚拟战场环境中激光探测器工作性能的仿真推演功能.     

AlN外延薄膜的生长和特征

文章研究了AlN薄膜的晶体质量、表面形貌、应力等性质与AlN生长工艺的依赖关系。通过对低温成核厚度、成核温度和高温生长AlN所用Ⅴ／Ⅲ比的研究，制备出了具有较好晶体质量的AlN薄膜。高分辨三晶X射线衍射给出AlN薄膜的(002)和(105)的半高宽分别为16．9arcsec和615arcsec，接近国际上报道的较好结果。原子力显微镜对表面形貌的分析表明AlN薄膜的粗糙度为5．7nm。拉曼光谱表明E2(high)模向高能方向移动，说明蓝宝石上外延的AlN薄膜处于压应变状态。光学吸收谱在204nm处具有陡峭的带边吸收，也表明了AlN外延薄膜具有较好地晶体质量。     

Synthesis and Characterization of New Schiff Base and Polyoxa-azaCryptands and Their Rare Earth Cryptates with [1 1] Condensation and Reduction Methods

IntroductionWithspecialandnovelstructures,macropolycyclicmoleculespreselltamultitudeofnewproperties'andopenupvastvistasforapplicationsinmanyfields"',suchassupramoleculardevices,luminescentlabels,fluorescentprobesinbiologicalandmedicalapplications,magneticresonanceimagingandcatalyticcleavageofRNA,and.-theyarealsoimportantligands'forrecognizinginorganicandorganiccanons,anionsandneutralmolecules.Becauseofmulti-stepprocessandlowyields',thesynthesisofmacropolycycliccompoundsaresometimesverydifficu…     

Mechanism of the interaction of color reagent 1, 3-N, N'-bis-4-(4'-nitro benzenediazo) phenyl squaraine with oxoacid anions

By AM1 method, the interactions between 1, 3-N, N′-Bis-4-(4′-nitro benzenediazo) phenyl squaraine (BNBPS) and several oxoacid anions have been studied on the basis of the proposed model. The mechanism of the color reactions is suggested and the answers to the question of whether or not BNBPS colorates with HCO_3~-, CO_3~(2-), NO_2~(-), NO_3~-, etc. are given. It is theoretically predicted that BNBPS might be used as the color reagent for SO_4~(2-).     

Effects of Sequence on Transmission Properties of DNA Molecules

A double helix model of charge transport in DNA molecule is given and the transmission spectra off our DNA sequences are obtained. The calculated results show that the transmission characteristics of DNA are not only related to the longitudinal transport but also to the transverse transport of molecule. The periodic sequence with the same composition has stronger conduction ability. With the increasing of bases composition, the conductive ability reduces, but the weight of θ direction rises in charge transfer.     

HNO与（HF）1≤n≤3分子间的蓝移与红移氢键

运用量子化学从头算方法研究了HNO与分子簇(HF)1≤n≤3形成的蓝移与红移氢键.在这些体系中,F…H-N都是蓝移氢键,重极化与重杂化和分子内超共轭导敛了氰键的蓝移;所有的X…H-F(X=O,N,F)氢键都是红移的,分子问超共轭导致了氢键的红移.在多分子体系形成的氢键链中,分子问超共轭作用呈现规律性递变,它导致了氢键强度与频率位移的规律性变化,电子密度拓扑分析结果反映和支持了这种规律性变化.     

Beam Polarization Dependence of Diffraction Efficiency in Photorefractive LiNb03 Crystal

In weak doped photorefractive LiNbO3 crystal, the diffraction efficiency is highly relevant to the writing and reading beam polarizations. In this paper, based on dynamic coupled-wave equations, we theoretically discuss the diffraction efficiency under four writing and reading polarization conditions, then reach the proven conclusion that with o-polarized beams to write and with e-polarized beam to readout, the diffraction is the largest.     

Theoretical Analysis and Simulation of BJFET Obstructive Characteristics

A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.