SIR and SNR improvement in wideband beamspace array processing

Owing to limitations of frequency resources, advanced sensor array processing techniques are needed in a growing wireless wideband communications market. A beamspace wideband processing technique is proposed and is shown to reduce both signal to interference and SNR ratios. Performances for different array processing algorithms, flexibility and complexity cost are thus improved     

Numerical analysis of a PbTiO3 ferroelectric thin-filminfrared optical diode

A thin PbTiO₃-n-p⁺ silicon diode has been developed, in which the conductivity increases with the infrared light power. The infrared-sensitive part consists of PbTiO₃ ferroelectric thin film deposited by RF sputtering. The diode has smaller heat capacity compared with other conventional infrared sensors because the tunneling current is allowed through the PbTiO₃ layer so that the PbTiO₃ film thickness can be thinned. Numerical analysis of the operational mechanism, such as the effects of infrared light power on the depletion layer width, n-p⁺ junction voltage, surface depletion region voltage drop, and voltage drop across the thin PbTiO₃ film, are reported in detail. Furthermore, some experimental measurements, such as the effects of infrared light power on current-voltage (I-V) curves and the dielectric constant of PbTiO₃ film, are compared with the theoretical analysis     

A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability     

Bandwidth enhancement of dielectric resonator antenna by loading alow-profile dielectric disk of very high permittivity

The aperture-coupled cylindrical dielectric resonator (DR) antenna loaded by a low-profile DR disk of very high permittivity is studied experimentally. By using the low-profile parasitic DR disk the antenna bandwidth can be increased from 8% bandwidth to 25%. The characteristics of the new configuration are measured and discussed     

A semi-empirical representation of antenna diversity gain atcellular and PCS base stations

Predictions of uplink space-diversity gain in the cellular and personal communications systems (PCS) bands (near 850 MHz and 1.9 GHz, respectively), suffer from incomplete modeling of multipath angular spread σ. Using previously published measurements to reduce the gap, we show that σ~[distance]^-1/2 and that diversity gains are about 2 dB higher for PCS than for cellular     

Algorithm for mapping between information bits and channel symbolsin MTCM codes

An algorithm for mapping between information bits and channel symbols in multiple trellis-coded modulation (MTCM) codes with M-PSK signal sets is proposed. The core of the algorithm assigns information bits with a Hamming distance in proportion to the sum of the Euclidean distance to each M-PSK symbol. The analytical results show that the additional gains from applying the algorithm can be achieved with little or no loss     

Driving voltage reduction in a two-phase CCD by suppression ofpotential pockets in inter-electrode gaps

This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed     

Device design with automatic simulation system for basic CCDcharacteristics

A simulation system has been developed to automatically analyze basic electrical characteristics of a charge-coupled device (CCD) image sensor from a process simulation result. This system shortened the simulation period to approximately 1/10 by getting rid of complicated repetitious procedures. A high-performance new cell technology has been developed successfully with improving impurity distribution in shorter development time by using this system. This technology has been realized as a CCD cell pixel with CCD charge quantity of 1.8 times, effective transfer efficiency of over 99%, no image lag for driving read-out pulse voltage in comparison with conventional technology. A 1/4-in 330 K square pixel progressive-scan CCD was fabricated with this technology. These results are described to demonstrate the effectiveness of the automatic simulation system     

Slot antennas on photonic band gap crystals

The radiation patterns of a slot antenna placed on a photonic band gap crystal have been measured. We used a layer-by-layer photonic band gap crystal having a three-dimensional stop band between 12 and 15 GHz. The slot antenna radiation depends sensitively on the relative position and orientation of the slot in the surface unit cell of the photonic crystal. We have found configurations of the slot antenna with an increase of radiated power by 2-3 dB. The photonic band gap crystal can considerably improve the performance of a simple slot antenna     

Analysis of availability improvement in LMSS by means of satellitediversity based on three-state propagation channel model

Aiming at future multimedia land mobile-satellite services (LMSS) consisting of a large number of nongeostationary Earth-orbit satellites, we present an LMSS propagation channel model for assessing the effect of a satellite diversity scheme so that high service availability and high signal quality are assured. We classify general fading environments for LMSS into three states. By taking the occurrence probability of each state into account, a new fading channel model is developed. The validity of the model is identified by comparing its predicted values in terms of the cumulative distribution function (CDF) with measured data available so far. Then, based on this model, we calculate the satellite diversity effect assuming that the area is illuminated simultaneously by at least two satellites moving in low Earth orbits (LEO) over urban and suburban environments. In addition, state transition characteristics based on a Markov model are presented