Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

On Striping Traffic over Multiple IEEE 802.11(b) Wireless Channels

Due to interference, path loss, multipath fading, background noise, and many other factors, wireless communication normally cannot provide a wireless link with both a high data rate and a long transmission range. To address this problem, striping network traffic in parallel over multiple lower-data-rate but longer-transmission-range wireless channels may be used. In this paper, we propose a new striping method and evaluate its performances over multiple IEEE 802.11(b) channels under various conditions. Our extensive simulation results show that this method is quite effective for such an application. S.Y. Wang is an Associate Professor of the Department of Computer Science and Information Engineering at National Chiao Tung University, Taiwan. He received his Master and Ph.D. degree in computer science from Harvard University in 1997 and 1999, respectively. His research interests include wireless networks, Internet technologies, network simulations, and operating systems. He is the author of the NCTUns 2.0 network simulator and emulator, which is being widely used by network and communication researchers. More information about the tool is available at http://NSL.csie.nctu.edu.tw/nctuns.html. C.H. Hwang received his master degree in computer science from NCTU in 2002 and currently is working for a network company. C.L. Chou currently is a third-year Ph.D. student at the Department of Computer Science and Information Engineering, National Chiao TungUniversity (NCTU), Taiwan. He received his master degree in computer science from NCTU in 2002.     

TD-SCDMA技术及市场分析

TD-SCDMA技术优势 2000年5月,在土耳其伊斯坦布尔召开的国际电联大会上,TD-SCDMA被国际电联接纳为第三代移动通信系统标准之一,这标志着中国在移动通信技术领域已经进入世界先进行列.     

Intermittent Phenomena in Switched Systems With High Coupling Strengths

In this paper, one kind of intermittency generated by a discontinuous system is studied. Although this system, which is composed of two switched subsystems coupled with a high strength, is nonsmooth, the mechanism of this kind of intermittency can be analyzed with several explicit relations between the intermittency characteristics and the system control parameters. In particular, estimates of "steady-state" values of the system (in the laminar phases) and a critical value for this intermittency can be derived, which are helpful in relevant control systems design. Moreover, some power laws for the observed intermittency are obtained and discussed     

CMOS active-LC bandpass filters with coupled-inductor Q-enhancement and center frequency tuning

A novel CMOS circuit for obtaining a bandpass response from a triple-coupled-inductor arrangement is presented, featuring Q-enhancement and center frequency tuning by means of vector-modulating a current flowing through one of the coupled inductors. A 0.35-/spl mu/m CMOS LC filter prototype employing the technique has been fabricated and exhibits a center frequency tuning range of 11% around 1 GHz and Q values up to 180. The input 1-dB compression point is -13 dBm with Q set to 20 and a power consumption of 12.2 mW. Additionally, an input impedance matching scheme around a spiral transformer is presented, which tracks the center frequency of the filter. The active-LC approach can be applied to higher order filter responses and find applications in tunable building blocks for agile RF front ends and multistandard radios.     

High optical power electroabsorption waveguide modulator

A sampled grating distributed Bragg reflector-laser integrated with a waveguide Franz-Keldysh modulator is investigated for high optical power applications. The EAM modulation efficiency is demonstrated to asymptotically approach a limit determined by the internal differential photodetector efficiency. Linear photocurrent and 1 dB small signal AC compression point both exceed 70 mA, indicating high saturation power.     

High-power 1320-nm wafer-bonded VCSELs with tunnel junctions

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Positively Thermo‐Sensitive Monodisperse Core–Shell Microspheres

In this paper, we report on a novel family of monodisperse thermo‐sensitive core–shell hydrogel microspheres that is featured with high monodispersity and positively thermo‐responsive volume phase transition characteristics with tunable swelling kinetics, i.e., the particle swelling is induced by an increase rather than a decrease in temperature. The microspheres were fabricated in a three‐step process. In the first step, monodisperse poly(acrylamide‐co‐styrene) seeds were prepared by emulsifier‐free emulsion polymerization. In the second step, poly(acrylamide) or poly[acrylamide‐co‐(butyl methacrylate)] shells were fabricated on the microsphere seeds by free radical polymerization. In the third step, the core–shell microspheres with poly‐ (acrylamide)/poly(acrylic acid) based interpenetrating polymer network (IPN) shells were finished by a method of sequential IPN synthesis. The proposed monodisperse core–shell microspheres provide a new mode of the phase transition behavior for thermo‐sensitive “smart” or “intelligent” monodisperse micro‐actuators that is highly attractive for targeting drug delivery systems, chemical separations, sensors, and so on.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.