Optoelectronically-pulsed antennas: characterization andapplications

A brief tutorial on the picosecond photoconductive effect is given. The use of picosecond optoelectronics for the characterization of broadband antennas is described. In particular, the transient radiation properties of equiangular-spiral and exponentially tapered coplanar-strip antennas are discussed. The transient radiation behavior and the polarization and radiation patterns of these antennas are easily determined with this measurement technique, without the need for anechoic chambers. Applications of picosecond-duration transient electromagnetic radiation to filter measurements, materials measurements, and scattering studies are discussed     

20-relative neighborhood graphs are hamiltonian

For any two points p and q in the Euclidean plane, define LUN_pq = { v | v ∈ R², d_pv < d_pq and d_qv < d_pq}, where d_uv is the Euclidean distance between two points u and v . Given a set of points V in the plane, let LUN_pq(V) = V ∩ LUN_pq. Toussaint defined the relative neighborhood graph of V, denoted by RNG(V) or simply RNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of RNG(V) if and only if LUN_pq (V) = ?. The relative neighborhood graph has several applications in pattern recognition that have been studied by Toussaint. We shall generalize the idea of RNG to define the k-relative neighborhood graph of V, denoted by kRNG(V) or simply kRNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of kRNG(V) if and only if | LUN_pq(V) | < k, for some fixed positive number k. It can be shown that the number of edges of a kRNG is less than O(kn). Also, a kRNG can be constructed in O(kn₂) time. Let E_c = {e_pq| p ∈ V and q ∈ V}. Then G_c = (V,E_c) is a complete graph. For any subset F of E_c, define the maximum distance of F as max_epq∈Fd_pq. A Euclidean bottleneck Hamiltonian cycle is a Hamiltonian cycle in graph G_c whose maximum distance is the minimum among all Hamiltonian cycles in graph G_c. We shall prove that there exists a Euclidean bottleneck Hamiltonian cycle which is a subgraph of 20RNG(V). Hence, 20RNGs are Hamiltonian.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Characterization of charge trapping in submicrometer NMOSFET's bygate capacitance measurements

Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence     

A neural network compensator for uncertainties of roboticsmanipulators

A neural network controller for trajectory control of robotic manipulators that is used not to internalize the inverse dynamic model of the controlled object but to compensate only the uncertainties of the robotic manipulator is presented. Its performance is compared with that of the conventional adaptive scheme. The results show the ability of the neural network controller to adapt to unstructured effects. A learning method for the neural network compensator with true teaching signals is shown. The tracking error of the robotic manipulator was greatly reduced when this controller was used     

A hybrid wafer-dicing process for GaAs MMIC production

A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges     

Intake of different chemical species of dietary arsenic by the japanese,and their blood and urinary arsenic levels

We calculated the intake of each chemical species of dietary arsenic by typical Japanese, and determined urinary and blood levels of each chemical species of arsenic. The mean total arsenic intake by 35 volunteers was 195±235 (15.8-1039) μg As day^?1, composed of 76% trimethylated arsenic (TMA), 17.3% inorganic arsenic (As_i), 5.8% dimethylated arsenic (DMA), and 0.8% monomethylated arsenic (MA): the intake of TMA was the largest of all the measured species. Intake of As_i characteristically and invariably occurred in each meal. Of the intake of As_i, 45-75% was methylated in vivo to form MA and DMA, and excreted in these forms into urine. The mean measured urinary total arsenic level in 56 healthy volunteers was 129±92.0 μg As dm^?3, composed of 64.6% TMA, 26.7% DMA, 6.7% As_i and 2.2% MA. The mean blood total arsenic level in the 56 volunteers was 0.73±0.57 μg dl^?1, composed of 73% TMA, 14% DMA and 9.6% As_i. The urinary TMA levels proved to be significantly correlated with the whole-blood TMA levels (r = 0.376; P<0.01).     

Development of a distributed sensing technique using Brillouinscattering

This paper reviews the developments of a distributed strain and temperature sensing technique that uses Brillouin scattering in single-mode optical fibers. This technique is based on strain- and temperature-induced changes in the Brillouin frequency shift. Several approaches for measuring the weak Brillouin line are compared     

Integrated-optic double-ring resonators with a wide free spectralrange of 100 GHz

Integrated-optic double-ring resonators with a wide free spectral range (FSR) of 100 GHz are fabricated using GeO₂-doped silica waveguides with a high relative refractive index difference (Δ) of 1.5%. The resonators are composed of two ring resonators comprising small ring waveguides with radii of 1.75 and 2.0 mm. The double-ring resonator module exhibited a wide FSR of 98.0 GHz, a finesse of higher than 138, a low crosstalk of less than -11.7 dB, and a low insertion loss of 6.1 dB. The measured FSR of 98.0 GHz is wider than any previously reported ring resonator composed of optical waveguides