An improved Gaussian approximation for probability of bit-erroranalysis of asynchronous bandlimited DS-CDMA systems with BPSK spreading

This paper analyzes probability of bit-error (P_e) performance of asynchronous bandlimited direct-sequence code-division multiple-access systems with binary phase-shift keying spreading. The two present methods of P_e analysis under bandwidth-efficient pulse shaping: the often-cited standard Gaussian approximation and the characteristic function (CF) method suffer from either a low accuracy in regions of low P_e (< 10^-3) or a prohibitively large computational complexity. The paper presents an alternate method of P_e analysis with moderate computational complexity and high accuracy based on a key observation. A sequence of chip decision statistics (whose sum yields a bit statistic) forms a stationary, m-dependent sequence when conditioned on the chip delay and phase offset of each interfering signal. This observation permits the generalization of the improved Gaussian approximation previously derived for the rectangular pulse and the derivation of a numerically efficient approximation based on the CF method. Numerical examples of systems using the square-root raised-cosine and IS-95 pulses illustrate THE P _e performance, user capacity and the accuracy of the proposed method     

Finite-difference time-domain simulation of scattering from objectsin continuous random media

A three-dimensional (3D) finite-difference time-domain (FDTD) scheme is introduced to model the scattering from objects in continuous random media. FDTD techniques have been previously applied to scattering from random rough surfaces and randomly placed objects in a homogeneous background, but little has been done to simulate continuous random media with embedded objects where volumetric scattering effects are important. In this work, Monte Carlo analysis is used in conjunction with FDTD to study the scattering from perfectly electrically conducting (PEC) objects embedded in continuous random media. The random medium models under consideration are chosen to be inhomogeneous soils with a spatially fluctuating random permittivities and prescribed correlation functions. The ability of frequency averaging techniques to discriminate objects in this scenarion is also briefly investigated. The simulation scheme described in this work can be adapted and used to help in interpreting the scattered field data from targets in random environments such as geophysical media, biological media, or atmospheric turbulence     

Single-frequency, single-knob tuning of a CW color center laser

We describe a simple way to achieve CW single-frequency laser operation with a grating as the sole tuning element. It is Shown, both experimentally and theoretically, that by proper choice of cavity parameters, the competing hole burning modes can be completely suppressed. Experiments to demonstrate the theoretical calculations were carried out in a CW color center laser using Tl⁰(1) centers. Linewidths of 0.01 cm^-1were obtained and this figure can probably be much improved by proper cavity stabilization. The method can be readily extended to any compact gain medium.     

Characteristics of propagation of light beams in gyrotropic crystals

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 5, pp. 815–819, May, 1991.     

Influence of Azimuthal Structure of Surface Waves on Efficiency of their Excitation by Tubular Electron Beams

The excitation of eigen surface waves by tubular electron beams in cylindrical discharge devices is studied. The influence of the wave‐field azimuthal structure on the excitation efficiency and nonlinear stage of the plasmabeam instability is investigated both numerically and analytically. Analytical expressions for the saturation amplitude and excitation efficiency of the wave under study are derived. They are found to agree well with results obtained by numerical modelling of the plasma‐beam interaction presented in this paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Performance engineering and topological design of metro WDM opticalnetworks using computer simulation

This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.