Electromagnetic shielding of HF lamps using wire structures:simulation and measurement

High-frequency (HF) operated lamps, such as HF fluorescent lamps, have several advantages over conventional ones but they contaminate the environment with their EM field emissions. The shielding of the electromagnetic emission should be realized without much effect on the emission of the light. Enclosing the lamps in a housing made of widely spaced thin wires could be an appropriate way to shield the electromagnetic field. The paper studies the effectiveness of some wire structures for shielding the electromagnetic emission from HF fluorescent lamps. An analytical study, method of moments (MoM), and measurements have been carried out to evaluate the strength of the near-field and the shielding effectiveness of the structures     

Magnetic resonance imaging of rigid polymers at elevated temperatures with SPRITE

Magnetic resonance imaging has rarely been applied to rigid polymeric materials, due primarily to the strong dipolar coupling and short signal lifetimes inherent in these materials. SPRITE (single point ramped imaging withT ₁ enhancement) (B. J. Balcom, R. P. MacGregor, S. D. Beyea, D. P. Green, R. L. Armstrong, T. W. Bremner: J. Magn. Reson. A123, 131–134, 1996) is particularly well suited to imaging solid materials. With SPRITE, the only requirement is thatT ₂^* be long enough so that the signal can be phase-encoded. The minimum phase encoding time is limited by the maximum gradient strength available and by the instrument deadtime. At present this is usually tens of microseconds and will only improve with refinements in technology. We have used the SPRITE sequence in conjunction with raising the sample temperature to obtain images of rigid polymers that have largely frustrated conventional imaging methods. This approach provides a straightforward and reliable method for imaging a class of samples that, up until now, have been very difficult to image.     

Development of high-speed video cameras for Dynamic PIV

The most promising next generation Image Velocimtry (IV) is the high-speed Dynamic PIV. It requires the development of innovative high-speed video camera sensors. We started by specifying the required performance of these new sensors, for measurements in air and water flows. These criteria founded on the most recent developments in PIV algorithms and incorporate results from a large questionnaire survey of users of high-speed video cameras in Japan. The results suggest that the followings are required: (1) frame rate of 1,000,000 fps, (2) pixel count of 1,000,000 pixels, (3) frame storage capacity of 100–200 frames for tracing a single event and 10,000 frames for turbulent measurements, (4) gray levels of 4–8 bits for PTV; 12 bits for observation. Finally, we reviewed the state of the art of high-speed video-image sensors. Currently the standard parallel-readout sensors can operate at 1 Kfps with a pixel count of approximately 1 Kpixels. The In-situ Storage Image Sensor (ISIS) developed by the authors has recently achieved frame rates of 1 Mfps.     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

The 2D Rancieite-type manganic acid and its alkali-exchanged derivatives: Part I — Chemical characterization and thermal behavior

The 2D Rancieite type manganic acid was prepared by reduction of KMnO₄ in acidic medium. Its ion exchange behavior allows to prepare alkali derivatives. All compounds were characterized with use of a combination of X-ray diffraction, chemical analyses, TGA, magnetic measurements and spectroscopic techniques. The evolution of their chemical composition versus temperature was studied between 180 and 400 °C. It shows that the dehydration process is partly reversible in these compounds whereas the weak reduction is irreversible. The 2D Rancieite-type manganic acid is readily different from a Birnessite-type phyllomanganate, as shown by several features: the interlayer distance, the ion exchange capacity, the thermal behavior, the interlayer cation content, the manganese average oxidation state, the magnetic behavior and the IR spectrum.     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face.     

The epitaxial growth of gaas using alkylarsine: Part 2. molecular orbital calculation

Semi-empirical molecular orbital calculations were carried out for the compounds (C₂H₅)₃As, (C₂H₅)₃Ga and RAsH₂ (R = C₂H₅, i-C₃H₇, i-C₄H₉, and t-C₄H₉) by using the CNDO/2-U program, and their capability of β-elimination reaction is compared on the basis of the torsion energy to the transition state, electrostatic interactions and orbital overlapping between the central atom and the β-hydrogen, and bond order of the metal-carbon, and carbon-hydrogen bond. In the comparison of (C₂H₅)₃As with (C₂H₅)₃Ga, we found that the β-elimination of (C₂H₅)₃As could hardly be expected to take place in the thermal decomposition. The capability of β-elimination would be smaller in C₂H₅AsH₂ than that in (C₂H₅)₃As. Moreover when the ethyl group is replaced by a t-butyl group in RAsH₂, the β-elimination reaction appears to become more difficult and a large possibility for a radical process is suggested.     

Resolvability theory for the multiple-access channel

We study the randomness needed for approximating the output distribution of a multiple-access channel, where the original input processes are independent of each other. The approximation is achieved by simulating (possibly alternative) input processes at each of the entries, where the sources of randomness available for the simulators are independent of each other, and the simulators do not cooperate. The resolvability region of a multiple-access channel is defined as the set of all random-bit rate pairs at which accurate output approximation is possible, where the simulation accuracy is measured by the variational distance between finite-dimensional output distributions. Inner and outer bounds on the resolvability region are derived, and close relations between the concepts of resolvability region and capacity region are demonstrated