MOS结构准静态测试中的异常C—V曲线

本文报导了MOS结构在准静态测试中的异常电容-电压曲线。讨论了它们产生的原因。     

Three-dimensional trajectory study of the I + HI → IH + I, H + I2 reactions

The quasiclassical trajectory calculation of the I + HI collision is performed in order to study the exchange and endothermic reaction channels. The rate constant of the exchange reaction I′ + HI → HI′ + I is found to be equal to 7.7 × 10¹¹ cm³/mol s at room temperature of 300 K. The study of the endothermic reaction I + HI → H + I₂ shows that it takes place only in configurations with large bend angles. Due to the non-collinear character of this reaction its threshold (2 eV) exceeds significantly the threshold of the minimal energy (collinear) reaction path (1.55 eV).     

Efficient photodiode-waveguide coupling for hybrid integrated optical circuits

A GalnAsP edge-detecting photodiode was coupled with an SiO2-TiO2 single-mode waveguide in a simple hybrid integration scheme. The newly developed edge-detecting photodiode with a window region was used to improve photodiode durability.     

Ferroelectric polarization switching in nylon-11

Cold-drawn Nylon-11 films, which were prepared by stretching the melt-quenched films to a draw ratio of 2.8: 1 at room temperature, were found to exhibit an electric displacement versus electric field hysteresis loop. The results confirmed that the Nylon-11 film exhibited ferroelectric behavior at or below room temperature. The coercive fields were 65, 98, 125, 160, and 215 MV/m at 20, 0, ?20, ?40, and ?60°C and the remanent polarization at ?20°C (where there was considerably less dc conduction) was 56 mC/m². Switching of the polarization was almost completed within 20 ms.     

X-ray evidence for the absence of 90°-domains in polycrystalline PbTiO3 thin films with grains below a critical size

3 thin films is systematically studied by using X-ray diffraction (XRD). The PbTiO₃ thin films with different average grain sizes were prepared on various substrates by a sol-gel process. The films on NaCl and fused glass are randomly grain-oriented, while those on (111)Pt/Ti/SiO₂/Si are highly {100} cubic index grain-oriented . It is found from the XRD patterns of the films on NaCl that with decreasing average grain size from 230 to 80 nm, the intensities of high h index (h>l) peaks (hkl), such as (100), (110), (200), (201), (210), (211), etc., decrease rapidly and ultimately disappear, whereas another set of peaks (lkh), including (001), (002), (102), (112), etc., are still intense. This interesting result suggests that at grain size below a certain critical size an increasing number of grains no longer show 90°-domains, which is confirmed by TEM observations. Meanwhile, X-ray evidence of such a grain-size-related absence of 90°-domains is also found for PbTiO₃ films on Pt(111) and fused-glass substrates. The volume fractions of single-domain grains (without 90°-domains) in the films are estimated from their XRD patterns. By combining SEM and TEM investigations, the critical grain size for the formation of 90°-domains is further determined to be near 200 nm. Received: 19 December 1996/Accepted: 24 March 1997     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

Image flow segmentation and estimation using displaced spatial gradient

There are two main causes of inaccuracies in estimating image flows using gradient based techniques. One is the erroneous measurement of gradients in brightness and the other is the blurring of motion boundaries which is caused by the smoothness constraint. In the Letter, the gradient measurement error of conventional methods is analysed and a new technique based on this analysis proposed.<>     

Offset dual-disk dielectric resonator antenna of very highpermittivity

An aperture-coupled offset dual-disk dielectric resonator antenna of very high permittivity is investigated experimentally. It is found that the new configuration offers an impedance bandwidth 4.6 times wider than that of the single element. The voltage standing wave ratio, radiation patterns, and antenna gain of the configuration are studied     

Design and simulation of waveguide electrooptic beam deflectors

Numerical simulation based on the scalar beam propagation method, was used to investigate the performance of waveguide electrooptic beam deflectors. The deflectors under investigation consist of a stack of electrooptically controlled prisms in a waveguide. The results were compared to earlier simplified analysis. It was found that for given overall device dimensions, the number of interfaces between prisms in a prism-type electrooptic deflector has significant influence on the device performance when it is small. To avoid wavefront distortion, unwanted reflection from the interfaces, and asymmetry in the deflection angles caused by small number of interfaces, one should use more than about ten interfaces in a typical deflector. Additional insights of device operation and design issues are discussed     

New theoretical concept of thin electromagnetic wave absorber usingresonant and scattering effect of dielectric and magnetic materials

Thin electromagnetic absorber such as less than 2~3 mm will be required for wireless LAN for domestic and business use together with millimeter wave broadcasting in the future. To make a thin construction, many resonators with lossy material were used. This paper present theoretical results that are useful for absorber designs