Linear optical switching in a FLC/waveguide composite device

A fast electrooptic modulation in a polymer waveguide using a ferroelectric liquid crystal has been proposed. In this device, the surface stabilized ferroelectric liquid crystal and the soft mode ferroelectric liquid crystal are used as an active material on the passive polymer waveguide, and electrooptic switching is realized by controlling the total reflection at the polymer waveguide-liquid crystal interface. The response time is of the order of several microseconds. The analogue electrooptic modulation in the waveguide is realized using the field induced linear molecular tilt of the electroclinic effect in the soft mode ferroelectric liquid crystal.     

Low-voltage BiCMOS dynamic minimum circuit using a parallelcomparison algorithm for fuzzy controllers

The authors present a low-voltage BiCMOS dynamic minimum circuit using a parallel comparison algorithm for VLSI implementation of fuzzy controllers. Using low-voltage BiCMOS dynamic circuits and a parallel comparison algorithm, a four-4-bit-input minimum circuit designed, based on a 1μm BiCMOS technology, shows a 9.5ns comparison time, which is a ×2.5 improvement in speed as compared to that based on CMOS technology     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

Removal of power line interference in signal-averagedelectrocardiography systems

A method for line interference reduction to be used in signal-averaged electrocardiography (SAECG) systems is proposed and its performance is analyzed. This new method is an adaptation of a previously reported technique for removal of line interference from conventional electrocardiograms. It involves the recording of a line reference signal simultaneous with the lead signals, so that a shifted and sealed version of it can be used to subtract line interference from the leads. It is shown that this line interference subtraction method can reduce line interference effectively and without introducing any additional noise into the ECG signal. It is also shown that Late Potential diagnostic decisions are not altered when this filter is applied. It is recommended that this technique be used in SAECG when line interference is unavoidable     

Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented     

Broadcast digital subscriber lines

The adoption of asymmetrical digital subscriber lines (ADSL) technology in conjunction with the broadcast digital subscriber lines (BDSL) proposed in this paper could provide a cost effective solution for the introduction of digital video services in the near term. BDSL provides the same digital broadcast video programs to all subscribers through existing twisted pair telephone loops. In this paper, the basics of telephone loop-based digital subscriber lines are first discussed. Then the potential of BDSL is explored in the twisted pair loop plant near end crosstalk (NEXT), far end crosstalk (FEXT), and white noise environment. The capability of BDSL is examined with different serving areas and transmit power levels. The possibility of using orthogonal quadrature amplitude modulation (QAM) to implement a zero guard-band BDSL system is studied. Computer BDSL performance simulations are then presented. The combination of high-bit-rate digital subscriber lines (HDSL), ADSL, and BDSL can provide telephone subscribers many digital broadband services     

Mine operating accurate stability control with optical fibersensing and Bragg grating technology: the European BRITE/EURAM STABILOSproject

Recent developments of stability control in mines, essentially based on Ge-doped fiber Bragg gratings (FBG) are reported including results about the different aspects of the system: accurate characterizations of FBG, sensor network topology and multiplexing method, user interface design and sensor packaging     

2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

A CMOS differential buffer amplifier with accurate gain andclipping control

A CMOS fully differential buffer amplifier with accurate gain and clipping control is presented. The gain is made variable by controlling the amount of the feedback around the power amplifier by means of an additional gain control loop. A new clipping technique is used to control the clipping level of the amplifier. The amplifier is realized in a 1.2 μm CMOS process with a single 5 V power supply. Measurements confirm the presented techniques     

Transient simulation of heterojunction photodiodes-part II:analysis of resonant cavity enhanced photodetectors

The high-speed response properties of resonant cavity enhanced (RCE) photodetectors have been investigated. The limitations on the high-speed performance of photodiodes and the advantages of RCE-detection are discussed. Transient response of heterojunction photodiodes under pulsed optical illumination has been simulated using the method described in Part I. Results on conventional AlGaAs/GaAs and RCE GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For small area detectors, almost 50% bandwidth improvement along with a two-fold increase in efficiency is predicted for RCE devices over optimized conventional photodiodes. A nearly three-fold enhancement in the bandwidth-efficiency product was shown