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151.
This paper describes a highly digitized direct conversion receiver of a single-chip quadruple-band RF transceiver that meets GSM/GPRS and EDGE requirements. The chip uses an advanced 0.25-/spl mu/m BiCMOS technology. The I and Q on-chip fifth-order single-bit continuous-time sigma-delta (/spl Sigma//spl Delta/) ADC has 84-dB dynamic range over a total bandwidth of /spl plusmn/135 kHz for an active area of 0.4 mm/sup 2/. Hence, most of the channel filtering is realized in a CMOS IC where digital processing is achieved at a lower cost. The systematic analysis of dc offset at each stage of the design enables to perform the dc offset cancellation loop in the digital domain as well. The receiver operates at 2.7 V with a current consumption of 75 mA. A first-order substrate coupling analysis enables to optimize the floor plan strategy. As a result, the receiver has an area of 1.8 mm/sup 2/.  相似文献   
152.
A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.  相似文献   
153.
It is well known that giant magnetoresistive (GMR) heads used for hard disk drives (HDD) are very sensitive to electrostatic discharge (ESD). In this paper, we describe a method of categorizing ESD damage modes from a standpoint of magnetic influences on the heads as observed by quasi-static test (QST) characteristics as well as electromagnetic characteristics like off-track profiles. In addition, we report an example of GMR stack interlayer diffusion which is one type of hard ESD damage. We also present an example of ESD damage that happened in an actual production process and its preventive measures as guidelines.  相似文献   
154.
This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm Semiconductor Optical Amplifiers of 700 μm length active region. Ageing tests have been set to 270 mA-100 °C-1500 h and realized on two different wafers showing more impact on wafer 1 than on wafer 2. Our investigations are particularly focused on interpretation of electroluminescence spectra, from reference and aged SOAs of wafer 1, leading to an improvement of degradation mechanisms understanding. The shift rate to lower energies of the recombination energy peak at 1550 nm, as reported by electroluminescence spectra between reference and aged SOAs in relation with the decrease of optical power measured at 200 mA for the degraded SOA and completed by I(V) characterizations, suggest occurrence of non radiative deep centers near the buried ridge structure in relation with the cleaning process uniformity of interfaces before epitaxial overgrowth. These defects mainly trap majority injected carriers instead of minority carriers reducing the luminescence in the active zone. By monitoring the most sensitive failure indicator (pseudo-threshold current), lifetime distributions are also calculated to determine failure rate, between 150 and 200 FITs over 15 years for operating conditions (25 °C-200 mA) using experimental degradation laws and statistic computations, demonstrating the overall robustness of this technology.  相似文献   
155.
For pt.I see ibid., vol.39, no.3, p.258-67 (1992). The winding of fiber optic filament in the hoop, or precision, pattern is considered. Various automatic control options that have been designed and tested are described. The controllers are designed to regulate the fiber lag angle, which is the angle at which the feed filament approaches the take-up spool. Successful, flawless winding is directly related to accurate lag regulation. The contributions are distinguished by the fact that the automatic winding rate is 10 to 30 times greater than that achieved before by operator-assisted winding  相似文献   
156.
The effects of measurement errors appearing during the implementation of the microwave holographic technique are investigated in detail, and many representative results are presented based on computer simulations. The numerical results are tailored for cases applicable to the utilization of the holographic technique for the NASA's Deep Space Network antennas, although the methodology of analysis is applicable to any antenna. Many system measurement topics are presented and summarized  相似文献   
157.
A novel wiggler design for use in free-electron lasers (FELs) is proposed, consisting of a staggered array of magnetic poles situated inside the bore of a solenoid. The resultant field pattern consists of a periodic transverse magnetic field on axis, as well as a longitudinal guide field. Such a wiggler has several advantages: the longitudinal field acts to confine the electrons near the FEL axis, high fields can be attained at short wiggler periods, the field strength is easily varied, and fabrication and testing of the wiggler are relatively easy. It is planned to use this wiggler design in a far infrared FEL to be built at Stanford University  相似文献   
158.
The management of voice disorders may follow one of four approaches: surgical, pharmacological, technical aid, and/or voice therapy. The latter approach offers a wide variety of techniques, each based on certain theoretical beliefs. One of these techniques is the Smith Accent Method. The principles and goals of the Accent Method are presented. The results of its application are discussed. This technique proved effective for cases of functional voice disorders, vocal nodules, and some degrees of vocal fold paralysis.  相似文献   
159.
The dynamic behavior of the continuous biological reactor subject to product inhibition is analysed and classified in terms of multiplicity and stability of steady states and existence and stability character of limit cycles. Various boundary conditions are derived which delineate the parameter space into regions of dynamically different behavior. The predicted types of behavior are then illustrated by numerical computation of cells and product concentration trajectories.  相似文献   
160.
A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series connected heterojunction phototransistor (HPT) light-emitting diode (LED) device. The model considers optical feedback from the light generated in the LED, electrical feedback from the holes thermally emitted over the LED cladding layer, nonlinear gain of the HPT, the Early effect, and leakage resistance. The analysis shows that either electrical or optical feedback can be the dominant cause for the NDR, depending upon their relative strengths. The NDR observed in the devices was caused primarily by electrical feedback since the optical feedback is weak. For low input power, avalanche breakdown appears to initiate the NDR in the devices although avalanching alone cannot cause NDR  相似文献   
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