2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

Transient simulation of heterojunction photodiodes-part II:analysis of resonant cavity enhanced photodetectors

The high-speed response properties of resonant cavity enhanced (RCE) photodetectors have been investigated. The limitations on the high-speed performance of photodiodes and the advantages of RCE-detection are discussed. Transient response of heterojunction photodiodes under pulsed optical illumination has been simulated using the method described in Part I. Results on conventional AlGaAs/GaAs and RCE GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For small area detectors, almost 50% bandwidth improvement along with a two-fold increase in efficiency is predicted for RCE devices over optimized conventional photodiodes. A nearly three-fold enhancement in the bandwidth-efficiency product was shown     

Experimental and theoretical studies on a distributed temperaturesensor based on Brillouin scattering

Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams     

Optimality of the sequential probability ratio test fornonstationary observations

Bayesian analysis is used to show that Wald's sequential probability ratio test with varying thresholds is optimal for the nonstationary situation, where the observed samples are independent but not identically distributed. Some important properties useful for the design of the test thresholds are discussed. Wald's lower bound, generalized to the nonstationary situation, is also presented. The results have important applications in situations where the observed signal is time-varying. such as in radar signal processing, image processing, and spread spectrum communications     

Simple approximations of the DC flux influence on the core losspower electronic ferrites and their use in design of magnetic components

The effect of DC flux on the core loss is examined for the practical range of power and frequency. Relevant core loss equations are derived and applied to an optimization algorithm to determine the minimum core loss at a given ratio of s (DC flux density to AC peak flux density). It has been found that the curves of hysteresis loss density versus the ratio of s exhibit a peak at a critical ratio. Below or above this critical ratio, the loss density decreases drastically. On the other hand, the curves of eddy-current loss density versus the ratio of s exhibits a minimum point at a critical ratio. Below or above this critical ratio, the loss density increases gradually     

A Tabu Search Approach for Delivering Pet Food and Flour in Switzerland

In this paper, we consider a real-life vehicle routeing problem that occurs in a major Swiss company producing pet food and flour. In contrast with usual hypothetical problems, a large variety of restrictions has to be considered. The main constraints are relative to the accessibility and the time windows at customers, the carrying capacities of vehicles, the total duration of routes and the drivers' breaks. To find good solutions to this problem, we propose two heuristic methods: a fast straightforward insertion procedure and a method based on tabu search techniques. Next, the produced solutions are compared with the routes actually covered by the company. Our outcomes indicate that the total distance travelled can be reduced significantly when such methods are used.     

Performance analysis of linear multiuser detectors for randomlyspread CDMA using Gaussian approximation

The performance of a linear decorrelating detector (LDD) and a minimum mean square error (MMSE) detector is analyzed for random spreading waveforms. The performance of the LDD and MMSE detectors is expressed in terms of the so-called near-far resistance, defined by a reciprocal of a diagonal component of inverse matrix. For random code division multiple access, which employs random spreading waveforms, the near-far resistance can be regarded as a random variable. Many papers have dealt with the analysis of multiuser detectors for random spreading sequences. In most cases, however, these analyses derived only the expectations or bounds for the near-far resistance. In this paper, we directly derive the approximate probability density function (PDF) of the near-far resistance and corresponding bit error rate expression for random spreading sequences. It is based on Gaussian approximation of the cross correlation between any two randomly generated spreading codes. The resulting PDF turned out to be a reversed-and-scaled version of chi-square distribution. The approximate expressions, both the PDF and the corresponding bit error rate expression, were verified via Monte Carlo simulations. The results showed that the approximation is quite close to the simulation results when the number of users is less than half the processing gain     

Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

Simulation study of peak junction temperature and power limitationof AlGaAs/GaAs HBTs under pulsed and CW operation

The authors have used a 3-D transmission-line matrix (TLM) modeling method to study the junction temperature distribution and power limitation of device geometries with multiple embedded heat sources. Peak values of the junction temperature against the dissipated power density under both pulsed and CW operation are presented for a typical power AlGaAs/GaAs HBT structure. These data should facilitate the rapid determination of junction temperature for a given output power, which is of paramount importance in power device design