FEM study of palladium and molybdenum clusters on an alumina covered field emitter

Palladium and molybdenum polycrystalline layers (clusters) have been deposited in a stainless steel UHV system onto a layer of alumina (Al₂O₃). This layer has been prepared by high temperature oxidation of an aluminium layer. The interaction of this system with nitrogen has been investigated at room temperature by an FEM technique. Under these conditions nitrogen spillover from molybdenum to palladium has been observed.     

A hybrid spreading/despreading function with good SNR performancefor band-limited DS-CDMA

Code-division multiple-access (CDMA) implemented with direct-sequence spread spectrum (DS/SS) signaling is a promising multiplexing technique for cellular telecommunications services. The efficiency of a direct-sequence spread-spectrum code-division multiple-access (DS-CDMA) system depends heavily on the shape of the spectrum of the spread signal. Maximum efficiency is obtained with an ideal brick-wall bandpass spectrum. There are two approaches toward achieving such a spectrum. One is to use a simple spreader that produces a broad spectrum and then follow it with a precise, high order filter to band limit the spectrum. A second approach, which is the approach taken in this paper, is to use a spreader that produces a spectrum close to the ideal spectrum and then employ a simple filter to control the out-of-band power. The proposed spreader/despreader is based on a simple hybrid function and can be easily implemented. An analysis provides a compact expression for the signal-to-noise ratio (SNR) of a RAKE receiver. The expression includes the effects of baseband, intermediate frequency (IF) and RF filtering as well as the effects of the spectral densities of the spreading/despreading functions. The analysis shows that the proposed spreader/despreader yields superior performance over a conventional pseudo noise (PN) spreading/despreading mechanism     

ICP－AES法测定金属矿产品中的磷

本文研究了铁矿石、铬矿石、锰矿石中的微量磷的电感耦合等离子体发射光谱法的测定。方法简便，具有很好的精密度和准确度。标准样品的分析结果基本与标称值相吻合，回收率在９５％－１０５％之间。     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication     

The signature theorem and some related questions

Some corollaries of the Hirzebruch-Thom signature theorem are discussed. The multiplicativity of the signature and the naturalness of the Pontryagin classes for coverings in the case of ℚ-homology manifolds is proved. A geometric proof of Hirzebruch’s well-known “functional equation” for the virtual signature is outlined. Bibliography: 25 titles. Translated fromZapiski Nauchnykh Seminarov POMI, Vol. 231, 1995, pp. 197–209. Translated by N. Yu. Netsvetaev.     

Finite element beam propagation method for three-dimensionaloptical waveguide structures

A beam propagation method (BPM) based on the finite element method (FEM) is described for longitudinally varying three-dimensional (3-D) optical waveguides. In order to avoid nonphysical reflections from the computational window edges, the transparent boundary condition is introduced. The present algorithm using the Pade approximation is, to our knowledge, the first wide-angle finite element beam propagation method for 3-D waveguide structures. To show the validity and usefulness of this approach, numerical results are shown for Gaussian-beam excitation of a straight rib waveguide and guided-mode propagation in a Y-branching rib waveguide     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

The strategy of edge wear prediction in CIM concept

A monitoring of tool wear in different cutting operations has been studied for many years. Special techniques have been used to detect a wear status basing upon cutting forces, acoustic emission, temperature, torque and power, vibration, noise and acceleration sensors. The adapting of a proper prediction method allows to solve problems of an automatic supervision in Computer Integrated Manufacturing systems. A task of the abrasive edge wear index prediction can be formulated as follows: disposing by the data collection of the edge wear status in a time period preceding the concerning the wear status in the successive time period embraced by the prediction method.     

Digitally tunable optical filters using arrayed-waveguide grating(AWG) multiplexers and optical switches

Two novel configurations for digitally tunable optical filters based on arrayed-waveguide grating (AWG) multiplexers are described in detail with emphasis on the connection of the AWG multiplexer and optical switches. Performance comparisons show that conventional configurations are disadvantaged by the switch size required and loss imbalance among the optical frequency-division-multiplexed (FDM) channels; the proposed configurations require only O(√(N)) switch elements to select one of N FDM channels, and the loss imbalance is lower by up to 75% in decibel     

A low-resistance self-aligned T-shaped gate for high-performancesub-0.1-μm CMOS

This paper describes the high performance of T-shaped-gate CMOS devices with effective channel lengths in the sub-0.1-μm region. These devices were fabricated by using selective W growth, which allows low-resistance gates smaller than 0.1 μm to be made without requiring fine lithography alignment. We used counter-doping to scale down the threshold voltage while still maintaining acceptable short-channel effects. This approach allowed us to make ring oscillators with a gate-delay time as short as 21 ps at 2 V with a gate length of 0.15 μm. Furthermore, we experimentally show that the high circuit speed of a sub-0.1-μm gate length CMOS device is mainly due to the PMOS device performance, especially in terms of its drivability