Floating-island TFT leakage caused by process step reduction

The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease     

Minimal transistor-only micropower integrated VHF active filter

A minimal integrated filter containing four MOS transistors as the only circuit elements is presented. Voltage tuning is used to set the cutoff frequency and band-edge peaking. A filter test chip occupies an active area of 0006mm2, has acutoff frequency of 40 MHz and dissipates 580W.     

A Modified Quasi-Newton Method for Structured Optimization with Partial Information on the Hessian

This paper develops a modified quasi-Newton method for structured unconstrained optimization with partial information on the Hessian, based on a better approximation to the Hessian in current search direction. The new approximation is decided by both function values and gradients at the last two iterations unlike the original one which only uses the gradients at the last two iterations. The modified method owns local and superlinear convergence. Numerical experiments show that the proposed method is encouraging comparing with the methods proposed in [4] for structured unconstrained optimization Presented at the 6th International Conference on Optimization: Techniques and Applications, Ballarat, Australia, December 9–11, 2004     

Stable all-optical formation of Bose–Einstein condensate using pointing-stabilized optical trapping beams

By stabilizing the beam pointing of optical trapping beams, we have succeeded in stable formation of Bose–Einstein condensate (BEC) of ⁸⁷Rb with all-optical method. The thermal effect of acousto-optic modulator (AOM) is usually one of the most serious problems to induce beam-pointing instability, especially for high power CO₂ laser. By passing the beam through AOM twice, we have improved the beam pointing from about 4.8 mrad to less than 0.4 mrad, which has been experimentally confirmed to be small enough to stably form BEC at the crossed region of CO₂ lasers as well as to perform experiments using an optical lattice which might have been affected by beam-pointing instability. PACS 32.80.Pj; 42.79.Jq; 03.75.Mn     

The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO₃ (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively. Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002     

Advances in the management and control of optical Internet

Given the ever increasing demand for network bandwidth, and the phenomenal advances in optical wavelength division multiplexing (WDM) networking technologies, a major component of the next generation Internet will be an Internet protocol (IP)-based optical WDM network. As IP over WDM networking technologies mature, a number of important architectural, management and control issues have surfaced. These issues need to be addressed before a true next generation optical Internet can emerge. We enumerate some of the key architectural, management and control issues and discuss corresponding approaches and advances made toward addressing these issues. We first review the different IP/WDM networking architectural models and their tradeoffs. We outline and discuss several management and control issues and corresponding approaches related to the configuration, fault, and performance management of IP over dynamic WDM networks. We present an analysis and supporting simulation results demonstrating the potential benefits of dynamic IP over WDM networks. We then discuss the issues related to IP/WDM traffic engineering in more detail, and present the approach taken in the NGI SuperNet Network Control and Management Project funded by DARPA. In particular, we motivate and present an innovative integrated traffic-engineering framework for reconfigurable IP/WDM networks. It builds on the strength of multiprotocol label switching for fine-grain IP load balancing, and on the strength of reconfigurable WDM networking for reducing the IP network's weighted-hop-distance, and for expanding the bottleneck bandwidth     

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.     

Experimental observation of quantum corrections to electrical resistivity in nanocrystalline soft magnetic alloys

X-ray diffraction patterns of nanocrystalline Fe-Cu-Nb-Si-B (FINEMET) alloys reveal that bcc α-Fe/α-FeSi crystallites with the average grain size of 20(5) nm are dispersed in amorphous matrix. Enhanced electron—electron interaction (EEI) and quantum interference (QI) effects as well as electron-magnon (and/or electron-spin fluctuation) scattering turn out to be the main mechanisms that govern the temperature dependence of resistivity. Of all the inelastic scattering processes, inelastic electron-phonon scattering is the most effective mechanism to destroy phase coherence of electron wave functions. The diffusion constant, density of states at the Fermi level and the inelastic scattering time have been estimated, for the first time, for the alloys in question Article presented at the International Symposium on Advances in Superconductivity and Magnetism: Materials, Mechanisms and Devices, ASMM2D-2001, 25–28 September 2001, Mangalore, India.     

On additives, morphological evolution and dielectric breakdown in low density polyethylene

A series of low density polyethylene systems has been studied with respect to structural evolution and short-term dielectric breakdown behaviour. All materials were based upon a single polymer, that is commonly used in high voltage applications, but with different additives. In all three of these systems, multiple melting transitions were observed, as a result of molecular fractionation effects during crystallization. In the virgin polymer, a space-filling banded spherulitic morphology was found to develop at low temperatures (102 °C and below) whereas, at higher temperatures, only a few isolated axialites were observed. Inclusion of the antioxidant resulted in greatly increased nucleation densities, such that, at low temperatures, no evidence of spherulitic organisation remained. At higher temperatures, sheaf-like lamellar aggregates developed, which were much smaller and much more numerous than in the case of the virgin polymer. Further addition of dicumyl peroxide (DCP) resulted in the rapid formation of a crosslinked network at 200 °C. Some crosslinking also occurred at 150 °C, but over a much longer timescale. Where extensive crosslinking occurred prior to crystallization, the resulting gel inhibited structural development, such that only a few small, isolated sheaves were able to form at 102 °C. In view of the principal application area of this material, the breakdown strength of each of the above systems was then measured and the whole data set was analysed statistically. When structural factors were considered alongside the statistics, no clear trends emerged to indicate that either the compositional or morphological variations were reflected in the short-term electrical failure processes.