Miniaturized coplanar waveguide stop band filters based on multiple tuned split ring resonators

A novel compact stop band filter consisting of a 50 /spl Omega/ coplanar waveguide (CPW) with split ring resonators (SRRs) etched in the back side of the substrate is presented. By aligning SRRs with the slots, a high inductive coupling between line and rings is achieved, with the result of a sharp and narrow rejection band in the vicinity of the resonant frequency of the rings. In order to widen the stop band of the filter, several ring pairs tuned at equally spaced frequencies within the desired gap are cascaded. The frequency response measured in the fabricated prototype device exhibits pronounced slopes at either side of the stop band and near 0 dBs insertion loss outside that band. Since SRR dimensions are much smaller than signal wavelength, the proposed filters are extremely compact and can be used to reject frequency parasitics in CPW structures by simply patterning properly tuned SRRs in the back side metal. Additional advantages are easy fabrication and compatibility with MMIC or PCB technology.     

Joint scheduling and power control supporting multicasting in wireless ad hoc networks

This paper addresses the problem of power control in a multihop wireless network supporting multicast traffic. We face the problem of forwarding packet traffic to multicast group members while meeting constraints on the signal-to-interference-plus-noise ratio (SINR) at the intended receivers. First, we present a distributed algorithm which, given the set of multicast senders and their corresponding receivers, provides an optimal solution when it exists, which minimizes the total transmit power. When no optimal solution can be found for the given set of multicast senders and receivers, we introduce a distributed, joint scheduling and power control algorithm which eliminates the weak connections and tries to maximize the number of successful multicast transmissions. The algorithm allows the other senders to solve the power control problem and minimize the total transmit power. We show that our distributed algorithm converges to the optimal solution when it exists, and performs close to centralized, heuristic algorithms that have been proposed to address the joint scheduling and power control problem.     

Analogue switch for very low-voltage applications

A new analogue switch suitable for operation at very low-voltage supply in a standard CMOS technology is presented. The proposed switch is based on 'quasi-floating-gate' transistors and has a simple and compact structure. For illustrative purposes, two sample-and-hold circuits operating from a single supply voltage close to the threshold voltage of a transistor, and using the proposed technique, are presented. Experimental results obtained from prototypes in a 1.5 /spl mu/m CMOS technology are provided.     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

A universal matrix solver for integral-equation-based problems

A new method has been developed for compressing the matrices that occur in most integral-equation-based computer programs. This method is easy to interface with existing computer programs, and allows them to run significantly faster and with significantly less memory. This method applies not only to electromagnetic and acoustic computation, but also to most programs involving a Green's function or any integral equation with a kernel having some smoothness properties. Our numerical computations, running on a high-end personal computer, have achieved compression ratios of fifty times, and compressed inversion of the matrices fifty times faster than by previous methods. For larger problems, solved on high-performance computers, these ratios would improve to about one thousand to one for larger moment method problems.     

A simple impulsiveness correction factor for control of electromagnetic interference in dynamic wireless applications

The emerging software defined radio technologies will be an enabler for a new generation of dynamic wireless systems. It will also open up the possibility of allocating frequencies in a, more dynamic way than today. From an intersystem-interference point of view, this can cause unforeseen problems to occur due to the increased complexity in such applications. In such applications, a measure indicating whether or not a frequency band is possible to use from an electromagnetic interference point of view, must be found. A simple approach is to use the measured total average interference power within the receiver band. Since the interference impact on modern digital communication systems from an interference signal does not only depend on the power but also on the actual waveform of the interference signal, some kind of quality measure of the average-power approach would be convenient to use. In this paper, we introduce a simple quality measure of the average-power approach so that a rough adjustment for the interference-waveform properties can be done.