The Existence of Periodic Orbits for Higher Dimensional Autonomous Systemswith Small Perturbations

ＴｈｅＥｘｉｓｔｅｎｃｅｏｆＰｅｒｉｏｄｉｃＯｒｂｉｔｓｆｏｒＨｉｇｈｅｒＤｉｍｅｎｓｉｏｎａｌＡｕｔｏｎｏｍｏｕｓＳｙｓｔｅｍｓｗｉｔｈＳｍａｌｌＰｅｒｔｕｒｂａｔｉｏｎｓＪｉａｎｇＬｉｑｉｎｇ（蒋里强）；ＺｈｏｕＹｉ（周毅）；ＦａｎＹｅ（范晔）（...     

行为级DSP算法描述的阵列处理器综合方法研究

本文提出了针对递归DSP算法的高层次系统综合流程,并以脉动(systolic)式处理器阵列结构实现.从DSP算法的FDDL行为级描述开始,经由编译及划分,产生数据相关流图(Data Dependency Graph),然后实现对算法流图的空间映射及时域规划,得到算法的信号流图(Signal Flow Graph),经时序重构,生成脉动阵列,最后实现对处理器单元的数据路径综合及控制器综合,并对处理器单元定位,本文同时提出了各设计阶段的算法策略及优化策略,并给出综合结果。     

固定电子分立元器件用胶粘剂E—4X的研制

介绍了一种不同于灌封材料，具有触变性，粘接性能优良，使用方便的固定电子分立元器件用胶粘剂Ｅ－４Ｘ。与国外同类产品Ｅｐ－４３３ｘ胶粘剂对比，其综合性能优于Ｅｐ－４３３胶粘剂。     

δ掺杂样品中空穴态的新行为

用有效质量理论研究了δ掺杂势中电子和空穴的行为。发现能量接近于δ势垒峰的空穴穿越势垒时能产生一系列谐振态。这些状态中的空穴波函数汇聚在势垒峰周围而同量子限制在势阱中的电子波函数交叠,产生光跃迁。用MBE生长的δ掺杂样品进行光调制光谱测量,发现明显的带间跃迁峰。测得的光谱峰同理论计算的能级相吻合,证实了δ势垒中空穴的新行为。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

激光晶体的新发展

本文根据最新资料对固体激光器所用激光晶体的近期发展作了详尽综述，并对我国应如何发展激光晶体研究提出建议。     

在（311）面上所生长的Al_xGa_（1－x）As／GaAs单量子阱特性

文章报道了用分子束外延（ＭＢＥ）法在６００℃和６５０℃下，在Ｓｉ掺杂的ＧａＡｓ衬底的（３１１）Ａ和（３１１）Ｂ面上成功地生长了高质量的ＡｌｘＧａ１－Ａｓ／ＧａＡｓ单量子阱材料。计算了光荧光（ＰＬ）峰值能量，并与实验作了比较。讨论了（３１１）Ａ和（３１１）Ｂ面上的不同生长特性。     

H∞ control versus disturbance-observer-basedcontrol

In the motion control field, a disturbance observer-based disturbance canceling control is often used as a robust control methodology. However, this method is nothing more than an alternative design of an integral controller, and the robust stability issue cannot be directly accounted for. In this paper, an extended H_∞ control scheme is proposed as a new robust motion control method which achieves the disturbance cancellation ability and guarantees robust stability automatically     

超稳Y沸石制备技术对沸石铝分布的影响 Ⅱ.均匀铝分布的超稳Y沸石的制备

对水热处理后得到的USY沸石作进一步的酸处理以及采用改进的氟硅酸盐溶液骨架富硅工艺,分别得到了经XPS剖面分析证实为铝分布均匀的超稳Y沸石HAY-Ⅰ和HAY-Ⅱ。IR分析表明,在酸处理过程中从USY沸石中去掉的那部分非骨架铝类与3690cm~(-1)处羟基有关,仍残留在HAY-Ⅰ沸石中的那部分非骨架铝类与3670cm~(-1)和3600cm~(-1)处羟基有关。XRD和化学分析表明HAY-Ⅰ沸石仍含有约50％的非骨架铝类,而HAY-Ⅱ沸石则基本上不含非骨架铝类,HAY-Ⅱ沸石还显示更高的结晶保留度。DTA分析表明,HAY-Ⅰ和HAY-Ⅱ两种沸石的热稳定性均高于USY沸石。     

多层介质光学膜系的误差分析——膜层厚度变化的灵敏度因子

文中推导了对于给定膜系的特定膜层的厚度变化的灵敏度因子计算公式，并给出了用计算机对不同膜系的计算实例。分析了厚度灵敏度因子对膜系透射光谱的灵敏谱段、灵敏膜层等特性的影响规律，并由此给出了确定膜层厚度允差的方法。