导电分子巯基紫罗碱电子结构的理论计算

用密度泛函B3LYP/6-31G**计算方法,对不同碳链长度和不同氧化态( V2 +/V+.)紫罗碱二硫醇的平衡几何构型及相应电子结构的研究表明,两种氧化态在吡啶环共面性和前线轨道电子集居上的差异与特征,导致氧化态V2 +成为紫罗碱亲合金原子形成Au-S-nVn-S-Au结构的关键组分,自由基V+.则在该结构的氧化还原电子传导中发挥核心作用.S-S核间距与前线轨道能隙的计算结果表明,在紫罗碱二硫醇单分子电导的测量中,亚甲基数n达到12的分子长度是有效的.     

Broadband dispersion compensation using microstructure fibers

Beijing University of Posts and Telecommunications, Beijing 100876Dispersion and dispersion slope compensation of 10-Gb/s pulses using microstructure fibers (MFs) is demonstrated experimentally. A 26-m MF is used to compensate the dispersion of 2-km standard singe mode fiber in a 20-nm range in C band. The experimental results show that a significant improvement can be achieved in the quality of the observed pulses with the dispersion compensation. Moreover, the further research shows that the MF can compensate the anomalous dispersion of a single mode fiber within ±0.27 ps/(nm·km) over a 50-nm wavelength range from 1520 to 1570 nm.     

Demonstration of fiber pulsed light source at 1.6 μm with adjustable pulse duration

A novel practical 1.66-μm pulse light source with adjustable pulse duration is proposed. A 2.5-km Raman fiber is placed into a ring type Q-switched erbium-doped fiber laser (Q-EDFL), serving as both delay line fiber and Raman gain medium so that in addition to the wavelength shifted to 1.6μm, the pulse duration and the buildup time can be relatively extended. By properly controlling the fall edge of the acousto-optic switch (AOS), the pulse duration of 30-345 ns for ～ 770-Hz repetition frequency with power of 1-1.6 W is achieved.     

不同方向交替干扰方法对抗雷达旁瓣对消技术

由于现代雷达采用了旁瓣对消技术，使得传统方式的旁瓣干扰几乎完全失去效果。本文提出了一种针对旁瓣对消雷达的交替干扰方法，即在不同方向布置干扰机对同一部旁瓣对消雷达实施时间上的交替干扰。通过理论分析和模拟可知，其干扰功率甚至高于双方都不采用特殊技术时（即干扰方采用一般的旁瓣干扰，雷达方不采用旁瓣对消）的旁瓣干扰功率14dB以上。     

凹槽栅场板结构的AlGaN/GaN HEMT特性分析

研究了无场调制板结构、有场调制板结构但无凹槽栅、结合场调制板结构和凹槽栅工艺三种AlGaN/GaN HEMT的动态I-V特性和微波特性,认为场调制板结构和凹槽栅工艺可以有效改善AlGaN/GaN HEMT器件沟道内电场分布,显著减小电流崩塌现象,提高器件的微波输出功率特性.利用此技术研制的1mm栅宽AlGaN/GaNHEMT输出功率大于10W.     

Concentric Sub‐micrometer‐Sized Cables Composed of Ni Nanowires and Sub‐micrometer‐Sized Fullerene Tubes

Highly ordered arrays of submicrometer‐sized coaxial cables composed of submicrometer‐sized C₆₀ and C₇₀ tubes filled with Ni nanowires are successfully prepared by combining a sol–gel method with an electrodeposition process. The wall thickness of the submicrometer‐sized tubes can be adjusted by the concentration of fullerenes and the immersion time. The thermal stability of the submicrometer‐sized C₆₀ tubes is studied by Raman spectroscopy and it is found that these structures can be easily decomposed to form carbon nanotubes at relatively low temperatures (above 573 K) in an alumina template. These novel coaxial cable structures have been characterized by transmission electron microscopy (TEM), high‐resolution TEM (HRTEM), scanning electron microscopy (SEM), field‐emission SEM (FESEM), Raman spectroscopy, elemental mapping, energy dispersive X‐ray (EDX) spectroscopy, X‐ray diffraction (XRD), vibrating sample magnetometer (VSM) experiments, and superconducting quantum interference device (SQUID) measurements. Magnetic measurements show that these submicrometer‐sized cables exhibit enhanced ferromagnetic behavior as compared to bulk nickel. Moreover, submicrometer‐sized C₇₀/Ni cables show uniaxial magnetic anisotropy with the easy magnetic axis being parallel to the long axis of the Ni nanowires. C₇₀/Ni cables also exhibit a new magnetic transition at ca. 10 K in the magnetization–temperature (M–T) curve, which is not observed for the analogous C₆₀/Ni structures. The origin of this transition is not yet clear, but might be related to interactions between the Ni nanowires and C₇₀ molecules. There is no preferred magnetization axis in submicrometer‐sized C₆₀/Ni cables, which implies that the Ni nanocrystals have different packing modes in the two composites. These different crystalline packing modes lead to different magnetic anisotropy in the two composites, although the Ni nanocrystals have the same face‐centered cubic (fcc) structure in both cases.     

一种三维场景的消失点检测算法

消失点可以提供大量的场景三维结构和方向信息,是重要的特征点。本文提出了一种不需附加场景先验信息和空间变换,直接利用直线信息在图像平面上估计消失点的算法,算法利用Helmholtz原理估计消失点在二维平面上的方向,在各检测到的方向中通过最小二乘求解消失点的准确位置。本算法不需要其它先验信息,提高了消失点检测效率和准确性,尤其适用于人工目标的三维特征提取。     

凹槽栅场板结构的AlGaN/GaN HEMT特性分析

研究了无场调制板结构、有场调制板结构但无凹槽栅、结合场调制板结构和凹槽栅工艺三种AlGaN/GaN HEMT的动态I-V特性和微波特性,认为场调制板结构和凹槽栅工艺可以有效改善AlGaN/GaN HEMT器件沟道内电场分布,显著减小电流崩塌现象,提高器件的微波输出功率特性.利用此技术研制的1mm栅宽AlGaN/GaNHEMT输出功率大于10W.     

微波反射光电导衰退技术在InGaAs台面结器件工艺中的应用

微波反射光电导衰退法是一种非接触式的半导体材料少子寿命表征手段,本文用微波反射光电导衰减法测试了台面InGaAs光电器件制备中各单项工艺(刻蚀、腐蚀、硫化)中InCaAs样品的少子寿命分布,结果表明,离子刻蚀使得样品少子寿命降低,非均匀性增大,而湿法腐蚀能够在一定程度上修复离子刻蚀带来的损伤,损伤区域中心的少子寿命增大,寿命分布也更加均匀,硫化钝化能够进一步提高损伤区域少子的寿命,却使寿命分布均匀性变差.可见,微波反射光电导衰减法可以简单无损地得到样品少子寿命分布,对工艺改进具有重要的指导意义.     

舰船可视化指挥调度通信系统设想

本文结合当前舰船指挥调度通信系统的大趋势，设想了一个指挥调度系统可视化方案，组建了一个有线／无线混合的可视化指挥调度系统，说明了此系统的功能及关键技术，并在理论上阐述了方案的可行性。