硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。     

Four-wave mixing based 10-Gb/s tunable wavelength conversion in dispersion-flattened microstructure fibers

All-optical wavelength conversion of 10-Gb/s signal based on four-wave mixing is experimentally demonstrated in a 30-m-long dispersion-flattened microstructure fiber with small positive dispersion. For an average pump power of 26 dBm, the conversion efficiency was around -19.5 dB with the fluctuation less than ±1.4 dB, covering a conversion bandwidth of 20 nm. The eye diagram of the converted signal shows good eye opening.     

有限维路代数的K_1群

本文通过计算有限维路代数k△的单位群和单位群的阿贝尔化,完全刻划了 任意域上有限维路代数的K1群.     

Dipole radiation in the proximity of a chiral slab

Radiation of an electric dipole located along an arbitrary direction in the presence of a chiral slab is formulated using matrix analysis in conjunction with Fourier transform techniques. Moreover, dyadic Green's function of such a structure may be determined for further investigation porpose.     

57Fe Mössbauer Study of Magnetic Nanowires

Hyperfine Interactions - Nanowires of metal, alloy, compound, and ferrite have been electrodeposited in anodic aluminium oxide templates. The structure and magnetic properties of the nanowires are...     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress     

500.8 nmNd∶YAG青光激光器光学薄膜的设计与制备

从双波长激光运转及和频的机理出发，对LD泵浦Nd∶YAG，LBO腔内和频500.8 nm〖JP2〗青光激光器所使用的光学薄膜进行了设计和制备.在激光反射镜的设计上，为了达到最佳的和频输出，对膜系要求进行了深入分析.采用对谐振腔一端面反射率固定不变并通过对另一腔镜基频光的透射率进行调谐的方法, 在给出合理初始结构后，利用计算机对膜厚进行了优化.并采用双离子束溅射沉积的方法，通过时间监控膜厚法成功制备出青光激光器所使用的全介质激光反射膜, 在室温下实现946 nm和1064 nm双波长连续运转，并通过Ⅰ类临界相位匹配LBO晶体腔内和频在国内首次实现500.8 nm青色激光连续输出.当泵浦注入功率为1.4 W时和频青光最大输出达20 mW.     

串扰耦合的低频分析有效性及阻抗特性研究

从传输线模型出发，分析了二平行直导线间串扰的低频模型有效性，得出允许3dB误差的条件下，低频模型在工程计算串扰中的电学短线和频率足够小的具体限值；同时分析了端接阻抗大小对串扰耦合的影响。对电磁兼容性中的串扰耦合的工程应用有实际指导和参考意义。     

自干扰抵消盲空时DS-CDMA信号检测技术

针对传统单用户检测器存在远近效应和性能下界问题,近年来提出的一系列最大SINR准则盲空时RAKE接收机,可以较好地合并期望用户的多径分量,同时抑制多址干扰用户能量.本文对这类接收机进行了进一步的研究,提出了一种自干扰抵消方法,更有效地克服了单用户检测器存在的性能下界以及远近效应问题.仿真结果验证了本文方法的有效性.