Some Oscillatory Singular Integrals on Herz-type Spaces (Ⅱ)

In this paper, the authors prove that some oscillatory singular integral operators of non-convolution type with non-polynomial phases are bounded from the Herz-type Hardy spaces to the Herz spaces and from the Hardy spaces associated with the Beurling algebras to the Beurling algebras in higher dimensions, even though it is well-known that these operators are not bounded from the Hardy space H1(Rn) into the Lebesgue spaceL1(Rn).     

Temperature dependence of excitonic luminescence from nanocrystalline ZnO films

The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect.     

荧光波长对共焦显微镜成像特性的影响

导出了共焦显微镜中不同荧光波长情况下的荧光功率传输函数、三维脉冲响应函数（3D－PSF）和三维光学传递函数（3D－OTF）。结果表明，不同的荧光波长对共焦显微镜的空间截止频率、分辨率、光学传递函数存在明显的影响。当激发波长与荧光波长的比值下降到一定程度时，可以看到明显的失锥现象。     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

低相噪,低杂波数字锁相环路滤波器的设计

较详细地分析数字锁相频率合成器的相位噪声，着重用控制论方法对低相噪、低杂波锁相环的环路滤波器进行设计，并用某Ｓ波段频率合成器的实验结果进行了验证。     

全20CrMnTi表面激光重熔的组织与性能研究

本文对激光重熔20CrMnTi材料表明改性层显微组织分布特征、表面硬度分布规律以及残余应力状态作了研究,结果表明,表面改性层由熔融层、相变硬化层及过渡层组成,且材料表面显微硬度得到大幅度提高,表面硬度达到HV841,约提高4倍。硬化层深度约1mm。残余应力测试得出最大残余应力出现在熔凝带中心,表现为压应力。随着离中心距离的增大,残余应力逐步降低,到熔化带边缘,表现为低幅值压应力;而熔池的外边缘应力在热影响区则转变为拉应力状态。     

An improved prediction of series resistance in spiral inductormodeling with eddy-current effect

Based on an earlier study by Kuhn and Ibrahim (see IEEE J. Trans. Microwave Theory Tech., vol. 49, no. 1, p. 31-38, 2001) on current crowding, an improved expression incorporating the skin effect for the prediction of series resistance in spiral inductor modeling has been derived. A modified model for the spiral inductor, which accounts for the eddy-current effect, is thus proposed. Relatively good agreements between the measured data and the results generated from the model are obtained     

Fast convergent dyadic Green's function in a rectangular waveguide

Alternative formulas for the dyadic Green's function in a rectangular waveguide are presented. These new functions are deduced by modifying part of Rahmat-Samii's derivation procedures by employing the Poisson summation technique. The Green's function obtained owns fast convergence property and is proved to be more suitable for numerical applications.     

两种自主开发的图形外延SiGe工艺

使用清华大学微电子学研究所研发的UHV/CVD系统深入研究了图形外延SiGe工艺,分别选用单一的SiO2介质层和SiO2/P0ly-Si复合介质层,作为图形外延SiGe单晶材料的窗口屏蔽介质,开发出了不同的实用化图形外延SiGe工艺.     

Effect of the polymer matrices on the dielectric behavior of a percolative high-k polymer composite for embedded capacitor applications

High dielectric constant (high-k) polymer composites are of great interest for embedded capacitor applications. Previously, we demonstrated that epoxy—aluminum composites are promising for embedded capacitor applications, because they have a high dielectric constant and a low dielectric loss due to the core—shell structure of the self-passivated aluminum particles. In this work, to further understand the dielectric behavior of aluminum composites, lower-loss polymers such as silicone, polyimide, polynorbornene, and benzocyclobutene were explored as matrices for the aluminum composites. It is found that the polymer matrices can significantly change the dielectric properties of the aluminum composites. A polymer matrix with a lower dielectric constant generally results in a lower dielectric constant of its aluminum composites. In this regard, polymer—aluminum composites have a similar dielectric characteristic as polymer—ceramic composites. Thermomechanical properties of aluminum composites were characterized by a thermomechanical analyzer.