On the Feasibility of Growing Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg_1/3‐Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d₃₃, in the range of 1800–2200 pC N^–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states.     

基于多线程技术的监控系统的设计

详细介绍在32位操作系统Windows95／98下，用C Builder3．0开发基于多线程技术的监控系统的有关方法。     

全球3G市场管制政策分析

主要对各国3G许可证与使用技术标准的抽绑政策．各国对2G／3G网络漫游的管制规定。以及3G网络之间共享的种类及实施方式等方面做了详尽的讲解，并进行比较和分析。     

Iterative detection/decoding for two-track partial response channels

In this letter, we investigate the iterative detection/decoding algorithms for two-track partial response channels. We first describe the iterative algorithm as an iterative message-passing/processing algorithm over a high-level normal graph and then propose two trellis-based detection algorithms. The natural one is based on a joint trellis, which can be implemented for low-order channels. For moderate-order channels, we propose a separated detection, which is based on two single-track trellises. Compared with the joint detection, the separated detection is simpler in most cases. Simulation results show that, for two-track EPR4 channels with minor intertrack interferences, the separated detection causes only marginal degradation in performance.     

新型的芯片间互连用CMOS/BiCMOS驱动器

从改善不同类型 IC芯片之间的电平匹配和驱动能力出发 ,设计了几例芯片间接口 (互连 )用 CMOS/Bi CMOS驱动电路 ,并提出了采用 0 .5 μm Bi CMOS工艺 ,制备所设计驱动器的技术要点和元器件参数。实验结果表明所设计驱动器既具有双极型电路快速、大电流驱动能力的特点 ,又具备 CMOS电路低压、低功耗的长处 ,因而它们特别适用于低电源电压、低功耗高速数字通信电路和信息处理系统。     

容灾系统中存储方案选择的研究

论文首先阐述了在容灾系统中存储方案的重要性,讨论了存储方案需要考虑的衡量指标,然后介绍了主要的存储方式,根据衡量指标划分了存储方式的特性范围,最后着重研究了容灾系统中存储方案的选择流程,并使用一个实例说明容灾系统中存储方案的选择流程。     

双层有机电致发光器件有机层厚度优化的数值研究

在陷阱电荷限制电流传导理论的基础上,提出了双层有机电致发光器件的数值模型,研究了结构为"阳极/空穴输运层(HTL)/发光层(EML)/阴极"的器件中电流密度和量子效率随有机层的特征陷阱能量、陷阱密度和载流子迁移率的依赖关系. 研究发现,对于给定的HTL和EML的特征陷阱能量、陷阱密度和载流子迁移率,存在一个最优的HTL和EML之间的厚度比率,在此最优厚度比下,器件的电流密度和量子效率达到最大.通过有机层厚度的优化,器件的电流密度和量子效率可提高多达两个数量级.另外,还研究了最优厚度比随有机层特征陷阱能量、总陷阱密度和载流子迁移率之间的定量关系.     

Comments on "An efficient PML implementation for the ADI-FDTD method"

For original paper see Wang and Teixeira (IEEE Microwave Wireless Comp. Lett., vol.13, p.72-4, 2003 February). In this paper, a more precise way to evaluate the actual performance of the perfectly matched layer (PML) used for the alternating direction implicit finite-difference time-domain (ADI-FDTD) method is presented. It is shown that the intrinsic numerical dispersion error of the ADI-FDTD method must be taken into account when the actual performance of the ADI-PML (as well as the ADI-FDTD method) is evaluated. Most importantly, it is demonstrated that the ADI-PMLs implemented with either the traditional manner or the way proposed in have almost the same level of accuracy when the performance of the ADI-PML is correctly evaluated.     

用CMOS工艺实现非接触IC卡天线的集成化设计

论述了用CMOS工艺实现非接触式IC卡天线的集成化需要考虑的各个方面,建立了集成天线的模型,给出了合理的设计方案,并通过实验验证了模型和设计方案.实验结果表明,采用片上天线完全可以提供非接触式IC卡工作所需要的能量.在频率为2 2 .5 MHz、感应强度为6×10 - 4 T的磁场中,面积为2 m m×2 mm的集成天线可以为10 kΩ的负载提供1.2 2 5 m W的能量.     

Catalytic synthesis of single-crystalline gallium nitride nanobelts

Single-crystalline gallium nitride nanobelts have been synthesized through the reaction of gallium vapor with flowing ammonia using nickel as a catalyst. The as-synthesized products were characterized using X-ray powder diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction (SAED). XRD and SAED results revealed that the products are pure, single-crystalline GaN with hexagonal structure. The widths and thickness of the nanobelts ranged from 80 to 200 nm, and 10 to 30 nm, respectively. The lengths were up to several tens of micrometers. The nanobelts had smooth surface with no amorphous sheath, and a sharp-tip end. The growth mechanism of nanobelts was discussed.