The study and applications of photochemical-dynamical gravity wave model II

A nonlinear, compressible, non-isothermal gravity wave model that involves photochemistry is used to study the effects of gravity wave on atmospheric chemical species distributions in this paper. The changes in the distributions of oxygen compound and hydrogen compound density induced by gravity wave propagation are simulated. The results indicate that when a gravity wave propagates through a mesopause region, even if it does not break, it can influence the background distributions of chemical species. The effect of gravity wave on chemical species at night is larger than in daytime.     

GALILEO频率结构和信号设计的分析

描述并分析了由欧盟GALILEO信号特别工作组提出的GALILEO全球卫星导航定位系统的频率结构和信号设计。     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

Soliton interaction under the influence of higher-order effects

In this paper, we present exact N-soliton solution by employing simple, straightforward Darboux transformation based on the Lax pair for Hirota equation, a higher-order nonlinear Schrödinger (HNLS) equation. As examples, one- and two-soliton solutions in explicit forms are given and their properties are also analyzed. A bound solution without interaction will be theoretically predicted if one can adjust frequency shift for each soliton appropriately. Further, we obtain the approximate eigenvalues by employing two-soliton solution and discuss analytically the interaction between neighboring solitons under the influence of the higher-order effects. It is shown that the combined effects of the higher-order effects can restrain the interaction between neighboring solitons to some extent. The results are proved by directly solving HNLS equation numerically.     

Fiber torsion sensor demodulated by a high-birefringence fiber Bragg grating

A new high-birefringence (Hi-Bi) fiber torsion sensor demodulated by a Hi-Bi fiber Bragg grating (FBG) is proposed in this study. The twisted Hi-Bi fiber sensor characteristics are analyzed using the Jones matrix. The intensity ratio from two reflected Bragg wavelengths is associated with the twist angle of the measured Hi-Bi fiber. It is found that the twist angle resolution is estimated at around 0.3° under ±0.1 dB readout from an optical spectrum analyzer if the polarization state of the light source is stable. The advantages of this new torsion sensor are: (1) insensitivity to intensity variations from the light source, (2) insensitivity to the torsion gauge length, and (3) absolute measurement in the twist angle. However, the polarization state of light in the proposed method needs to be controlled, and any birefringence change in the twisted Hi-Bi fiber needs to be prevented.     

U：CaF2晶体的分凝特性与光谱性质

应用TGT法生长了直径为75mm的U：CaF2晶体，宏观上透明完整.应用公式K0=Cs/Cl计算了U在CaF2晶体中的分凝系数等于0.53.应用溶质分布一般公式Cs=K0C0(1-g)K0-1，计算U的浓度分布与测量值，数值符合说明晶体生长过程接近平衡状态.分析不同条件下生长的U: CaF2晶体的晶胞参数和吸收光谱，结果表明生长气氛决定U的价态及电荷补偿机理：无PbF2存在的条件下，U为+4价，晶体呈绿色；PbF2的加入起到氟化去氧作用，U倾向于以离子半径最接近于Ca2+的U3+存在，晶体呈红色.从晶体生长开始到结束的部位，U3+:CaF2晶体吸收光谱的峰位不变，峰强呈现与U浓度相同的增加趋势.U3+:CaF2晶体外层厚约5mm处呈黄色，含有U3+和U2+的混合价态离子，其原理是石墨坩埚的还原作用通过单质铅，使部分的U3+进一步还原成了U2+. 关键词： 铀 氟化钙晶体 分凝系数 晶胞参数     

The effects of crystal structure on optical absorption/photoluminescence of bis(8-hydroxyquinoline)zinc

In this paper, the transformation processes of two types of bis(8-hydroxyquinoline)zinc: Znq₂ dihydrate and anhydrous (Znq₂)₄ were investigated by X-ray diffraction (XRD), infrared spectra (IR), scanning electron microscope (SEM), differential scanning calorimetry (DSC) and thermogravimetry (TG). The effects of crystal structure on optical properties of bis(8-hydroxyquinoiline)zinc were analyzed. Znq₂ dihydrate can be transformed into anhydrous (Znq₂)₄ during heating under vacuum. Reversal transformation occurs by the interaction between chloroform and (Znq₂)₄. But (Znq₂)₄ was partially transformed into Znq₂ dihydrate by the interaction between ethanol and (Znq₂)₄. The different molecular structure results in different crystal stacking and electronic structure, thereby affect its optical properties.     

Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature

Hydrogen-free silicon nitride （SiNx） films were deposited at room temperature by microwave electron cyclotron resonance （MW-ECR） plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm.     

神经网络在缺陷识别中的应用

为了准确、快速地进行缺陷识别，介绍了一种新型的前馈神经网络模型，即径向基概率神经网络。与以往的算法相比，该方法具有分类识别精度高且速度快的优点。仿真获得了很好的结果。     

Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films

Transition-metal compound TiC₆₀ thin films were grown by co-deposition from two separated sources of fullerene C₆₀ powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C₆₀ structure with certain amount of sp³ bonds and a rough surface with a large number of nanoclusters. z–V tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm² and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE. The respective field enhancement factors are estimated to be 99–355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC₆₀ thin films can be ascribed to structural variation of C₆₀ in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C₆₀ matrix.