最大无关组的判定定理及其它

本文给出了一个判定最大无关组的充要性定理及其证明．同时对用矩阵的行变换求最大无关组这一问题进行了点滴分析并介绍了一个解齐次线性方程组的简便方法。     

F／Cl比与Eu~（2＋）：BaFCl中F色心的浓度和光激励截面的关系

研究了Ｅｕ（２＋）：ＢａＦｘＣｌ２在紫外线辐照下的光激励发光。通过改变激励方式及激励光的扫描方向，给出了Ｅｕ（２＋）：ＢａＦｘＣｌ２－ｘ光激励发光过程中，两种Ｆ色心的浓度比值与光激励截面比值的测定方法。利用这种测定方法，进一步研究了两种Ｆ色心的浓度比值和光激励截面比值与Ｆ／ＣＩ比值的关系。     

Analysis of dispersion characteristics for a circular dielectric waveguide with periodic metallic strips by using the method of lines

The dispersion characteristics of circular dielectric waveguide with periodic metallic strips are analyzed by the method of lines. The filter property of the metallic strip loaded structure is carefully investigated for both TE and TM modes. The brillioum diagrams for both TE₀₁ and TM₀₁ modes are given. A comparison is made between the results obtained by Galerkin's method and those calculated with the method of lines, and very good agreement has been found; the accuracy of the present method is thus justified. On the basis of the analysis, some useful guidelines for the design of the bandreject filters are suggested.     

Distances between oriented curves in geometric modeling

We consider the choice of a functional to measure the distance between two parametric curves. We identify properties of such a distance functional that are important for geometric design. Several popular definitions of distance are examined, and new functionals are presented which satisfy the desired properties. This revised version was published online in August 2006 with corrections to the Cover Date.     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

复杂目标近场电磁散射的可视化计算方法

首次介绍了复杂目标近场散射计算的可视化方法。采用非均匀有理Ｂ样条曲面（ＮＵＲＢＳ）精确构造任意形状散射体，结合几何体近场透视变换和Ｚ－Ｂｕｆｆｅｒ技术实现了基于Ｗｉｎｄｏｗｓ平台的近场散射计算。提出广义雷达散射截面的概念并给出的若干算例。该方法充分利用了计算机３Ｄ图形设备的几何运算能力，运算速度快，严谨高，可扩展性好。     

Analysis of a resonant-cavity enhanced GaAs/AlGaAs MSMphotodetector

The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained     

Diffraction characteristics of superimposed holographic gratings inplanar optical waveguides

A coupled-mode analysis of superimposed holographic transmission gratings in single-mode planar optical waveguides is presented. The diffraction characteristics are shown to be sensitive to the polarization of the incident wave, the angular separation of the output waves and the relative index modulation between the gratings. The coupling between gratings affects the diffraction efficiencies and decreases the angular and wavelength selectivities. Nevertheless, good channel separation and high fanout can be obtained together     

一类非线性单调型方程的区域分裂法

本文考虑了一类非线性单调问题的加性Schwgrz交替法和异步平行算法,并得到了在能量模意义下的收敛性结果,最后还讨论了格式的有限元离散。     

光孤子相互作用对压缩态的影响

在线性近似条件下，量子化了非线性薛定谔方程，用后向传播法数值求解了光孤子相互作用对压缩比的影响。数值结果表明，在碰撞距离附近，压缩比显著增加。