Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

Geometrical study of paraxial light beam transmission in free space

By introducing an imaginary space transform curvature ρ_s, a complex space called Riemannian space is constructed, in which the light propagating in free space has the trajectory of straight line while propagating. Moreover, this curvature couples with that of the wave front of the paraxial beam ρ_w, and therefore a complex curvature ρ_c is constructed, which can be employed to investigate the behavior of the light transmission and to generalize the ABCD law. Project supported by the National Hi-Tech Inertial Confinement Fusion Committee, the Guangdong Natural Science Foundation the Postdoctoral Foundation of Guangdong and National Postdoctoral Foundation of China.     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

Ga1-xInxAs/InAsyP1-y/InP异质结的MOCVD生长及表征

Ga1-xInxAs(x>0.53)材料是未来长距离低损耗光纤通信的理想光源材料和探测器材料之一.我们采用水平常压MOCVD系统,在InP衬底上成功地生长了Ga1-xInxAs(x>0.53)/InAsyP1-y/Inp异质结材料.其中InAs1-yPy为组份阶梯变化的多层结构.由样品的(400)面X光衍射结果测定了各层组份.由二次离子质谱(SIMS)得到了样品剖面组份变化结果,证明InAs1-yPy层组份为阶梯状变化的.通过对光致发光结果和X光衍射结果比较,可以看到,InAsyP1-y层通过位错和弹性畸变二种方式来释放或积累Ga1-xInxAs与InP间的失配应力,从而减少了Ga1-xInxAs中的失配位错.有效地改善了Ga1-xInxAs的质量.已获得了x高达0.94表面光亮的Ga1-xInxAs/InAs1-yPy/InP异质结材料.     

新颖的基于小波变换的数字水印方案

随着计算机网络技术与多媒体技术的快速发展，数字产品的版权保护已经成为信息技术领域中最重要的问题之一，提出了一种新颖的基于离散小波变换的数字水印方案，该方案利用改进的Pacthwork算法，将水印嵌入到LL子带中，水印信号在解码过程中无需使用原始图像可快速地重嵌入，该算法利用BCH码来降低误码率，应用所提出的算法，把一个32个字符的水印嵌入到图像中，实现结果表明水印是不可察觉的，经过JPEG有损压缩，低通与中值滤波等图像处理操作后仍是鲁棒的。     

Scattering parameters of a waveguide cross junction loaded with a metallic post in the center

In this paper, the scattering parameters of a waveguide cross junction loaded with a metallic post in the center are analyzed for the first time by using the Method of Lines. The homogeneous boundary condition of the third kind and curved boundary are introduced in the formulation. Numerical results are in good agreement with the experimental data. The scattering parameters at Ka-band and W-band of the cross junctions loaded with metallic posts of different radii are presented. It is shown from the numerical results that loaded with metallic posts is an effective means for adjusting the network parameters of the waveguide cross junction to satisfy some special requirements in the design of millimeter wave components.     

一种图文数据库系统的设计与实现

随着计算机技术的发展和水平的提高，图像，声音，图形等多媒体信息逐步应用于管理信息系统之中。文章中提出了图文数据库系统设计中存在的三个基本问题。讨论了介绍了图文数据库系统的设计方法和实现技术。     

Independent cycles with limited size in a graph

Letk and s be two positive integers with s≥3. LetG be a graph of ordern ≥sk. Writen =qk + r, 0 ≤r ≤k - 1. Suppose thatG has minimum degree at least (s - l)k. Then G containsk independent cyclesC ₁,C ₂,...,C _k such thats ≤l(C _i ) ≤q for 1 ≤i ≤r arnds ≤l(C _i ) ≤q + 1 fork -r <i ≤k, where l(C_i) denotes the length ofC _i .     

In situ observation of NaBi(WO4)2 dendrite growth and the study on microstructure of solidification

The dendrite growth process of transparent NaBi(WO₄)₂ with small prandtl and high melting point was studied by using the in-situ observation system. According to the dynamic images and detailed information, there are two kinds of restriction effect on the dendrite growth, the competition between arms and branches and the convection in the melt. The dendrite growth rate was time dependent, and the rate of arm growth reached the maximum 5.8 mm/s in the diffusive-advective region and rapidly decreased in the diffusive-convective region. The growth rate of branch had the same change trends as the arm’s. Based on the EPMA-EDS data of solidification structure of quenched NaBi(WO₄)₂ melt, it was found that there were component differences from stoichiometric concentration in the melt near the interface during the growth process. Supported by the National Natural Science Foundation of China (Grant No. 50331040) and the Innovation Funds from Shanghai Institute of Ceramics, Chinese Academy of Sciences (Grant No. SCX0623)     

单晶和多晶纯铝蠕变过程中的内耗

研究了单晶和多晶纯铝蠕变过程中的低频内耗. 在单晶纯铝中观察到: 内耗在蠕变初期单调下降, 在蠕变第一阶段后期出现了一个显著的时间内耗峰, 在蠕变第二阶段内耗趋于稳定值. 多晶纯铝在类似实验条件下则不出现时间内耗峰. 文中分析了出现时间内耗峰的条件和原因, 认为它是由于蠕变第一阶段中运动位错的阻尼系数逐渐增大所引起的. 文中还从蠕变过程中位错运动的微观机制出发, 推导出了蠕变过程中内耗的表达式, 满意地解释了实验结果. 关键词：