Synthesis and characterization of white‐light‐emitting polyfluorenes containing orange phosphorescent moieties in the side chain

Two orange phosphorescent iridium complex monomers, 9‐hexyl‐9‐(iridium (III)bis(2‐(4′‐fluorophenyl)‐4‐phenylquinoline‐N,C^2′)(tetradecanedionate‐11,13))‐2,7‐dibromofluorene (Br‐PIr) and 9‐hexyl‐9‐(iridium(III)bis(2‐(4′‐fluorophenyl)‐4‐methylquinoline‐N,C^2′)(tetradecanedionate‐11,13))‐2,7‐dibromofluorene (Br‐MIr), were successfully synthesized. The Suzuki polycondensation of 2,7‐bis(trimethylene boronate)‐9,9‐dioctylfluorene with 2,7‐dibromo‐9,9‐dioctylfluorene and Br‐PIr or Br‐MIr afforded two series of copolymers, PIrPFs and MIrPFs, in good yields, in which the concentrations of the phosphorescent moieties were kept small (0.5–3 mol % feed ratio) to realize incomplete energy transfer. The photoluminescence (PL) of the copolymers showed blue‐ and orange‐emission peaks. A white‐light‐emitting diode with a configuration of indium tin oxide/poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)/PIr05PF (0.5 mol % feed ratio of Br‐PIr)/Ca/Al exhibited a luminous efficiency of 4.49 cd/A and a power efficiency of 2.35 lm/W at 6.0 V with Commission Internationale de L'Eclairage (CIE) coordinates of (0.46, 0.33). The CIE coordinates were improved to (0.34, 0.33) when copolymer MIr10PF (1.0 mol % feed ratio of Br‐MIr) was employed as the white‐emissive layer. The strong orange emission in the electroluminescence spectra in comparison with PL for these kinds of polymers was attributed to the additional contribution of charge trapping in the phosphorescent dopants. © 2007 Wiley Periodicals, Inc. JPolym Sci Part A: Polym Chem 45: 1746–1757, 2007     

Synthesis of single crystalline layered lithium manganese oxide nanorods

Single-crystalline layered lithium manganese oxide nanorods were prepared via a low-temperature molten salt synthesis method. The material was investigated by a variety of techniques, including X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and X-ray photoelectron spectrum (XPS).     

硫酰胺的快速分析（Ⅱ） 

硫酰胺生产过程中副产的大量氯化铵要干扰硫酰胺的测定，采用四苯硼钠将全部氯化铵呈沉淀析出，再用次溴酸钠把滤液中的硫酰胺分解成氮气，测其体积，计算出硫酰胺的含量。对样品进行测定的结果表明，该法重现性好、准确度高、分析周期在３５ｍｉｎ内，相对误差在±１％以内。     

分形方法用于有噪图像边缘检测的研究

本文研究了加性高斯白噪声对于基于离散分数布朗随机场模型图像分形维数估计的影响，并将分形方法用于图像边缘检测，指出在加性高斯白噪声的情况下，分形方法用于图像边缘检测较之经典的基于梯度运算的边缘检测方法有好的抗噪性能，同时又能检测比较丰富的图像边缘细节。     

准分子激光器异步感应密封传动技术

一种新型准分子激光器循环系统中的密封传动技术，具有可耐高气压，不失耦，不使用昂贵强磁材料，结构简单等优点，虽有涡流损失过大之不足，但能很好地适用于小功率下运行。     

Application of novel SIMS technique for imaging the active sites of oxygen reduction at the SOFC cathode/electrolyte interfaces

The oxygen reduction active sites were visualized around the O₂/SOFC cathode/electrolyte triple phase boundaries (TPB) by the¹⁶O/¹⁸O exchange techniques and secondary ion mass spectrometry (SIMS) analysis. The higher¹⁸O concentration is observed on the cathode top surfaces (La_0.9Sr_0.1MnO₃-mesh, Au-mesh, and Ag-porous), which suggested the promotion of oxygen adsorption and oxygen surface exchange at the cathode. The oxygen diffusion through the bulk of cathode occurred at the La_0.9Sr_0.1MnO₃-mesh and the Ag-porous cathodes, not at the Au-mesh cathode. On the YSZ surfaces after removing the cathode, the active sites for oxygen incorporation were analyzed by SIMS. The active sites for oxygen incorporation were at the La_0.9Sr_0.1MnO₃/YSZ interface as well as the TPB. On the other hand, the active sites for oxygen incorporation are limited to the TPB in the case of the Au-mesh removed YSZ surface. From the SIMS analysis, the expansion of the active sites for oxygen incorporation is less than a few μm from the TPB lines. Paper presented at the 8th EuroConference on Ionics, Carvoeiro, Algarve, Portugal, Sept. 16–22, 2001.     

基于小波基优化和动态比特分配的数字音频压缩编码方案

提出了一种新颖的基于自适应小波基优化选择和心理声学模型相结合的数字音频信号的透明质量编码方法，保证固定失真水平上使每帧信号的变换系数的动态分配的比特数最少，并且利用动态码本的方法来消除音频信号的统计冗余，进一步压缩比特率，对于抽样率为４４．１ｋＨｚ每样值用１６比特线性码表示的光盘单声道音乐信号可以压缩到６４ｋＢＰＳ左右。     

过量Zn对β-Zn4Sb3热电性能影响的研究

采用真空熔融缓冷方法制备了单相β-Zn4Sb3以及含有过量Zn的β-Zn4Sb3块体热电材料.在300—700K的温度范围内测试了材料的电导率、Seebeck系数和热导率,研究了β-Zn4Sb3化合物中过量Zn的分布状态及其对材料热电性能的影响规律.结果表明：过量的Zn作为第二相较均匀的分布在β-Zn4Sb3的晶界上,随着Zn含量增加,材料电导率和热导率上升,Seebeck系数下降,Zn第二相的引入能有效提高材料的功率因子,Zn过量2at%的材料在700K时其ZT值达到1.10.     

VO2-Based Infrared Microbolometer Array

V0₂-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V0₂-based microbolometer array are tested.